T1416 Search Results

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: T1/CEPT/ISDN PRI Interface Transformer Turns Ratio + 5% 1CT:1CT & 1CT:2CT PARAMETER MIN. OCL (Primary) 1.2 MAX. UNITS mH Leakage Inductance 0.6 µH Capacitance (CW/W) 30 pF Primary DC Resistance 0.7 Ohms 0.7 & 1.0 Ohms Secondary DC Resistance ET Product

Contextual Info: For T1 /CEPT/ISDN PRI Telecom Applications T1 / CEPT / ISDN PRI SMD Transformers Dual Configuration 1500 V_. „ minimum Isolation - Selected units 2000 Vnwc Small footprint / Surface Mount 50 mil style package Designed to meet CCITT and FCC Requirements Custom Designs Available

T-14169

Abstract: 14169
Contextual Info: T1/CEPT/ISDN PRI Interface Transformer Turns Ratio + 5% Flammability: Materials used in the production of these units meet requirements of UL94-VO and IEC 695-2-2 needle flame test. 1CT:1CT (T1) & 1CT:2CT (T2) PARAMETER MIN. OCL (Primary) 1.2 MAX. UNITS

14162

Abstract: T-14162
Contextual Info: T1/CEPT/ISDN PRI Interface Transformer Turns Ratio + 2 % 1CT:1.41CT & 1CT:1.41CT Primary Pins 11-9 & 1-3 Electrical Specifications at 25O C Parameter Min. Max. OCL (Primary) T1 T2 Leakage Inductance T1 T2 0.8 0.8 µH µH Capacitance (CW/W) T1 T2 30 30

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

tda8367

Abstract: TDA9162 DBS13P TDA8351A TDA8366 TDA9150 TDA9151B TDA9160A
Contextual Info: IN TEG R A TED C IR C U ITS TDA8351A DC-coupled vertical deflection output circuit O bjective specification File under Integrated Circuits, IC02 January 1995 Philips Semiconductors PHILIPS P H IL IP S 7 11 DA 2L , □Dflb4El T17 This Material Copyrighted By Its Respective Manufacturer

TDA8350Q pin voltage

Abstract: TDA8367 ic 301 tda8350q west 6500 DBS13P TDA8350 TDA8350Q TDA8366 TDA9150 TDA9151B
Contextual Info: IN TEG R A TED C IR C U ITS im m soil E n TDA8350Q DC-coupled vertical deflection and East-West output circuit P relim inary specification S upersedes data of S eptem ber 1991 File under Integrated Circuits, IC02 Philips i li w January 1995 i ll* u r e o PHILIPS

Contextual Info: T1 / CEPT / ISDN PRI SMD Transformers Dual Configuration For T1/CEPT/ISDN PRI Telecom Applications 1500 VRMS minimum Isolation - Selected units 2000 VRMS Small footprint / Surface Mount 50 mil style package Designed to meet CCITT and FCC Requirements Custom Designs Available

16X1

Contextual Info: SOLDERING TIPS [V ITA C O TE TIPS CHART] 0 0 rr- i- H DIAM ETER x 2 V ? LONG | Cat. Ho. 210-114 210-143 211-127 220-116 230-123 240-111 231-131 Style o f Point C h isel Long C h isel Short C h isel Turned to 1/16 Semi-Chisel Pyramid Corneal Sharp B e v e l Turned to 1/16

T-1416

Abstract: 1416 T1416
Contextual Info: Line Transformer Turns Ratio 4 : 1 + 1% Parameter Min. Typ. Max. Units 1.88 2.00 2.12 mH 11 µH DC Resistance 1-4 1.26 Ω DC Resistance (2-5) 1.25 Ω DC Resistance (9-7) 1.00 Ω Inductance 1-5 (2-4, Shorted) Leakage Inductance 1 2 Hi-Pot Primary to Secondary

14163

Abstract: T-14163 PAIRGAIN 850C
Contextual Info: T1/CEPT/ISDN PRI Interface Transformer Turns Ratio + 5% PARAMETER OCL (Primary) 1:1.15CT & 1CT:2CT MIN. MAX. 1.5 & 2.0 UNITS mH Leakage Inductance 0.8 & 0.6 µH Capacitance (CW/W) 40 & 45 pF Primary DC Resistance 0.9 & 1.0 Ohms Secondary DC Resistance

LS 2027 audio amp

Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

T-14106

Abstract: 16 Pin 14150 T-14159 T-14151 T-1410 T-14103 T-14107 T-14109 T-14110
Contextual Info: T1 / CEPT / ISDN PRI SMD Transformers Dual Configuration For T1/CEPT/ISDN PRI Telecom Applications 1500 VRMS minimum Isolation - Selected units 2000 VRMS Small footprint / Surface Mount 50 mil style package Designed to meet CCITT and FCC Requirements Custom Designs Available

transistor MX 13001

Abstract: scr 14027 1500 watt smps schematic 1117G T-50110 en 50524 T948 T-10347 T-10913 t163x
Contextual Info: 2002 Rhombus Industries Inc. Transformers & Magnetic Products Transformers & Magnetics for Data Communications Products Include . ADSL DSL HDSL ISDN S/U T1/CEPT/PCM DDS T3/E3/DS3 LAN/WAN Ethernet 10 BASE-T 100 BASE-T 1000 BASE-T Data Line Filters Multi-Purpose

Contextual Info: For Tl/CEPT/ISDN PRI Telecom Applications T1 / CEPT / ISDN PRI SMD Transformers Dual Configuration 1500 VRMS minimum Isolation - Selected units 2000 V ,^ Small footprint / Surface Mount 50 mil style package Designed to meet CCITT and FCC Requirements Custom Designs Available

ic tda7057aq

Contextual Info: IN T E G R A T E D CIRCUITS [nlEET TDA7057AQ 2 x 8 W stereo BTL audio output amplifier with DC volume control Product specification Supersedes data of 1997 July 15 File under Integrated Circuits, IC01 Philips Sem iconductors 1998 Apr 07 PHILIPS PHILIPS Philips S e m ico nd uctors

ample

Abstract: Ample Communications T1416 MDIO T1-416 mdio termination
Contextual Info: A2111 Preliminary Product Brief Skyhawk 10 Gigabit Ethernet LAN/WAN PHY Overview The Skyhawk is a highly integrated, ultra-low-power frame processing solution for 10 Gigabit Ethernet 10 GbE physical layer applications. The device provides complete PCS-R, PCS-W, and WIS functionality and

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

triac zd 607

Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Contextual Info: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni­ cian. The information contained herein is based on an analysis of the published

Contextual Info: T1 / CEPT / ISDN PRI SMD Transformers Dual Configuration For T 1 /C E P T /IS D N PRI Telecom Applications 1500 V j ^ minimum Isolation - Selected units 2000 Small footprint / Surface M ount 50 mil style package Designed to m eet CCITT and FCC Requirements