T10N Search Results

2T31

Abstract: 2T312A
Contextual Info: M A INS TYPE FREQUENCY XTAVM ann VDRM 16 * r .s TION TION T10N TION TION TION TION TION TION TION TION TION TION 05 1 2 3 4 5 6 7 8 9 10 11 12 JTSM 9 T 7M A (V) T JM= 1 2 5 3C 50 100 (m A^ 100 vii/LU JUNCTION TEMPERATURE = 25°C v VGT 1 XH ; VTM 9 XTM max. max. ! max.

aeg t15

Abstract: N800COB TAG740-200.800 ST018S08P bty91 800r S2014NH SKT16F08DU 1N800COC T12N800COB t7n800
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VDRM V IT Max (A) ITSM (A) lOT Max (A) VOT Max (V) IDRM dv/dt (A) (V/UB) to Operating Temperature Max (8) (OC) Min Max Package Style SeRs, VDRM >= 800 V (Co nt' d) 5 10 15 20 T10N800UOF BT152-800

aeg t15

Abstract: 3var 2N1848B
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number SeRs, VDRM 5 10 CS090 S4060C NCF300D 2N1848 2N1848A SC10C30 TIC126C TIC126C MCR220•5 T10N300HOC g~~~g 15 20 25 30 35 40 SC126C SC126C T10N300COB T10N300COE T10N300COF T10N300HOB T10N300HOE T10N300HOF 11

Contextual Info: 147 Central Avenue Hackensack, New jersey 07601 Tel: 201-489-8989 •Fax: 201-489-6911 Mounting Clips for T-1 3mm I & T-1 C hicagoM iniature Lamp Inc. WHERE INNOVA T10N COMES TO UGHT • iSm m i I.EDs D E S C R I P T I O N N D F E A T U R E S SERIES 4303MC

130A2s

Abstract: S-14 t10n TC46C
Contextual Info: file D • 0^200^ Q Q Q b D S O 1 B A L â G 7=-'25“- / S r ~ T10N 100 * 200 300 Elektrische Eigenschaften Electrical properties Höchstzulässige Werte U drm>Urrm Periodische Vorwärts-und Rückwärts-Spilzensperrspannung Ithmsh Effektiver Durchlaßstrom

Contextual Info: E G - A K T I ENGES EL LSCH AF T fllC D • GOETMIS OOObOSO ■ AEGG T10N Typenreihe/Type ränge T10N 100* E le k trisch e Eig en sch a ften E lectrica l properties 200 H ö ch stz u lä s s ig e W erte M axim um p e rm issib le va lu e s U d r m . U r r m Periodische Vorwärts-und

Contextual Info: 0029426 A E G CORP öl DE • □□ST42b DDDLD5G S ■ T10N Typen reihe/Type range_ T10N ' to = 85°C tc = 46°C It r m It s m Periodischer Spitzenstrom Stoßstrom-Grenzwert repetitive peak on-state current surge current t = 10ms,t»j = 45°C

Contextual Info: NL Series — SMD Ferrite Wound Inductor These revolutionary, highly reliable wound chip inductors for automatic mounting, have been developed in response to the trend toward high density in electronic equipment. With metal terminals and a body of heat resistant resin, these

Contextual Info: I/O Type USB 8-Bit OTP MCU with SPI HT82A525R Revision: 1.60 Date: January 22, 2014 HT82A525R I/O Type USB 8-Bit OTP MCU with SPI Table of Contents Features .4 General Description .4

Contextual Info: ! 6 L 2 _ I_ y 5 _ j _ i _ 4 _ [ _ _ _ I_ L Z 6 5 0 _ _ _ _ _ _ _ _ _ _ _ _ _ I_ _ _ _ _ _ _ _ _ _ _ _ _ 4 5 1 D RAW ING NUMBER HUMEHO DU FLAM

T08N

Abstract: UT01N t03n n21p UT03N n25p n20p AD8151 T09N N31P
Contextual Info: PRELIMINARY TECHNICAL DATA TM 33 x 17, 3.2Gb/s Digital Crosspoint Switch a s tre a m D 7 A 5 F irst Ran k 1 7 x 7 b it L a tc h Se co n d Ra n k 1 7 x 7 b it L a tc h Input Decoders RE INN CS Output Address Decoder FEATURES Low Cost 33 x 17, Fully Differential, Nonblocking Array

xbox joystick

Abstract: xbox power supply pid 420 Xbox HT46RB70
Contextual Info: HT46RB70 A/D Type USB 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: · 8 channels 10-bit resolution A/D converter fSYS=6MHz: 2.2V~5.5V fSYS=12MHz: 2.7V~5.5V · 4-channel 8-bit PWM output shared with

Contextual Info: HT46RB50 A/D Type USB 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note - HA0075E MCU Reset and Oscillator Circuits Application Note - HA0107E HT46RB50 Thermometer Features clock at VDD=5V · Operating voltage: fSYS=6MHz: 2.2V~5.5V

aeg t15

Abstract: T12F400 CR08E SS220D T12F400CCC T12F400CDC SF16G14 20RIF40W20 N400COB S4020L
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VORM V IT Max (A) ITSM (A) lOT Max (A) VaT Max (V) IORM dv/dt (A) (V/U8) to Max (8) Operating Temperature coe) Min Max Package Style SeRs, VDRM >= 400 V (Cont'd) 5 10 SC1SC40 SF16G14 SF1SG14

Contextual Info: 256M GDDR3 SDRAM K4J55323QG 256Mbit GDDR3 SDRAM Revision 1.2 March 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

timing controller SHART

Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Contextual Info: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

K4J10324KE-HC1A

Abstract: K4J10324KE-HC14 T21N K4J10324KE k4j10324 K4J10324KE-HC12
Contextual Info: Target 1Gb GDDR3 SDRAM K4J10324KE 1Gbit GDDR3 SDRAM 136FBGA with Halogen-Free & Lead-Free RoHS compliant Revision 0.1 December 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

P4N20

Abstract: ADT8A
Contextual Info: P r BM NARY INFORMATION PM09610S1 Æ lY I^ - PMC-Sierra, inc. BSUE2 PM3350 ELAN 8x10 BPOffflOIMmSEIHBW ETSW rrCH PM3350 ELAN 8x10 8 PORT ETHERNET SWITCH Preliminary Information Issue 2: July 1997 PMC-Sierra, Inc. 105 - 8555 B axter Place Burnaby, BC Canada V 5 A 4 V 7 6 0 4 .415.6000

Contextual Info: HT82A525R I/O Type USB 8-Bit OTP MCU with SPI Features • Operating voltage: fSYS=6MHz: 3.3V~5.5V fSYS=12MHz: 4.5V~5.5V · Two oscillators: External crystal - HXT 6MHz or 12 MHz Internal RC - HIRC (12MHz) · Fully integrated internal 12MHz oscillator requires no external components

DDR2 x32

Abstract: GDDR3 SDRAM 256Mb K4J55323QF-GC K4J55323QF-GC12 K4J55323QF-GC14 MICRON gddr3 K4J55323QF-GC20 Gl WL02 Elpida GDDR3 T12N
Contextual Info: 256M GDDR3 SDRAM K4J55323QF-GC 256Mbit GDDR3 SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate 3 Synchronous DRAM with Uni-directional Data Strobe and DLL 144 - Ball FBGA Revision 1.7 January 2005 Samsung Electronics reserves the right to change products or specification without notice.

Contextual Info: HT46R24/HT46C24 A/D Type 8-Bit MCU Features • Operating voltage: · Up to 0.5ms instruction cycle with 8MHz system clock fSYS=4MHz: 2.2V~5.5V fSYS=8MHz: 3.3V~5.5V at VDD=5V · 16-level subroutine nesting · 40 bidirectional I/O lines max. · 8 channels 10-bit resolution A/D converter

Contextual Info: HT46R232/HT46C232 A/D Type 8-Bit MCU Technical Document • Tools Information · FAQs · Application Note - HA0005E Controlling the I2C bus with the HT48 & HT46 MCU Series - HA0013E HT48 & HT46 LCM Interface Design - HA0017E Controlling the Read/Write Function of the HT24 Series EEPROM Using the HT49 Series MCUs

Contextual Info: HT82A525R I/O Type USB 8-Bit OTP MCU with SPI Features • Operating voltage: fSYS=6MHz: 3.3V~5.5V fSYS=12MHz: 4.5V~5.5V · Two oscillators: External crystal - HXT 6MHz or 12 MHz Internal RC - HIRC (12MHz) · Fully integrated internal 12MHz oscillator requires no external components

Contextual Info: HT82A523R I/O Type USB 8-Bit OTP MCU with SPI Technical Document • Tools Information · FAQs · Application Note Features · Operating voltage: · 2 sets of SIO synchronous serial I/O function fSYS=6MHz & 12MHz: 3.3V~5.5V · Supports Interrupt, Control, Bulk transfer