2N3350
Abstract: Thyristor TO39 2N2906 2N2906A 2N2907 2N2907A 2N2914 2N2915 2N2916 2N2917
Contextual Info: Type No. BS/CECC Polarity 2N2906\ CV-0 PN P 2N2906A; PNP 1CV' ° 2N2907 1f f j CV-0 PN P CV-0 PN P 2N2907A 2N2913y1 50002-186 NPN Dual 6 1 3 31 87 37E SEMELAB L T D •c hpE @ VCE & lc Package VCEO cont T018 T018 T018 T018 T077 40 60 -40 60 45 0.6 0.6 0.6
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ai331
2N2906\
2N2906A*
2N2907
2N2907A
2N2913y
2N2914\
2N2915
2N2916
2N2917
2N3350
Thyristor TO39
2N2906
2N2906A
2N2907
2N2914
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2N2646
Abstract: 2N2647 2n 2646 NTS 10 s 2646 T018 gk1k 2646 nts1500
Contextual Info: Thyristors and Unijunctions Thyristors Case Type Plastic T018 T05 NTS 311 NTS 0660 N TS 1500 1 Maxim um ratings Characteristics @ 2 5 °C y FR^ V {FM A °C 30 60 500 0.6 0.6 1.0 150 150 150 V /°C 50 (3 0/12 5) — 1000 — (5 0 0 /8 5 ) 'h r mA V G T1
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2N3986
Abstract: 2n1696 2n4146 2N3228 2N4148 LS 2027 2N3555 2n4327 2N6167 2N4331
Contextual Info: | lemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type *Note 1 Forward Current If (»mp«) 2N6S1 2N682 2N683 2N684 2N685 2N686 2N687 2N688 2N689 2N690 2N764* 2N765* 2N766* 2N767" 2N876
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2N661
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N690
2N3986
2n1696
2n4146
2N3228
2N4148
LS 2027
2N3555
2n4327
2N6167
2N4331
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2N3986
Abstract: LS 2027 2N4146 2N3086 2n3986 sis 2N4148 2N4327 2N1689 LS 2027 amp 2N4331
Contextual Info: ^ discrete devices jemitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current It (»mp«) Mai. Forward M ai. Reverie Voltages V f o m /V ron (volts) (Note 2) Mailmum
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2n681
2n682
2n683
2n684
2n685
2n686
2n687
2n688
2nb89
2n690
2N3986
LS 2027
2N4146
2N3086
2n3986 sis
2N4148
2N4327
2N1689
LS 2027 amp
2N4331
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2N3055E specification
Abstract: 2N3350 2N3904D 2N3904DCSM 2n2894 2N3680 2N2222ADCSM 2N3347 2N2993 T05 Package
Contextual Info: BS/CECC Type No. Polarity 2N 2906\ CV-0 PNP 2N2906A; PNP 1CV' ° 2N2907 1 f f j CV-0 PNP CV-0 PNP 2N2907A 2N2913y 1 50002-186 NPN Dual '2N3054 >2N3055 / ^2N3055E r rX2N3209 1 ^¿2N3209L / • ° 50004-042 50003-020 50004-XXX 50004-XXX 2N3347 2N3348 2N3349
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ai331
2N2906\
2N2906A*
2N2907
2N2907A
2N2913y
2N2914\
2N2915
2N2916
2N2917
2N3055E specification
2N3350
2N3904D
2N3904DCSM
2n2894
2N3680
2N2222ADCSM
2N3347
2N2993
T05 Package
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2N1602
Abstract: 2n1649 2N893 2N6241 2nu8 2N6401 2N2679 2n4327 2N3228 2n4146
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T '- ä $ - 'O l 3 discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current Maximum Junction Temperature CC Mw. DC Cate Trinar Current
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2N682
2N685
T0-48
2N686
2N687
2N688
2N889
2N690
2N764*
2N765Â
2N1602
2n1649
2N893
2N6241
2nu8
2N6401
2N2679
2n4327
2N3228
2n4146
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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S107-05
Abstract: T0-202AA TD6001 2N2325 T0202 2N877 2N878 2N879 2N880 2N881
Contextual Info: 48 THYRISTORS SENSIBLES sensitive gate thyristors Valeurs limites Absolute max. ratings Caractéristiques électriques Electrical characteristiques V DWM •o TYPES V rsm ITSM 10ms Vq t V RWM A 0,5 A eff (rms) / 2N877 2N878 2N879 2N880 2N881 2N882 2N883
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2N877
2N878
2N879
2N880
2N881
2N882
2N883
TY1005F
TY200SF
TY3005F
S107-05
T0-202AA
TD6001
2N2325
T0202
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2N8402
Abstract: SN232 2n883 mi SN2014 2n4146 2N3560
Contextual Info: INTEX/ SEMITRONICS CORP 27E D HöbTEML. 0 0 0031=1 jGmrcron SEMICONDUCTORS T 3 '- ä $ - 'O discrete devices Semitronics Corp. thyristors and triggers silicon controlled rectifiers Forward current 1 44 l (»m p») Max. Forward Max. R ev in t Voltate» Vfo m / V hom
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2H5061
Abstract: 2N268 2N2601 2N893
Contextual Info: discrete devices lir^ ] JEmitronicr hot line T O L L F R E E N U M B E R 800-777-3960 thyristors and triggers silico n controlled rectifiers Type 'Note 1 Forward Current It (Amps) Max. Forward Max. Reverse Voltasti V fom / V rom (volts) (Noto 2) Maximum
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2N681
2N682
2N683
2N684
2N685
2N686
2N687
2N688
2N689
2N680
2H5061
2N268
2N2601
2N893
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SN76477
Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p
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2114L
6116P3
6116LP3
AY-3-1270
AY-3-1350
AY-3-8910
AY-3-8912
AY-5-1230
CA3080E
CA3130E
SN76477
TNY 176 PN EQUIVALENT
2n4401 free transistor equivalent book
tis43
XR2206 application notes
Semiconductor Data Handbook mj802
2N3866 s2p
bc149c
TIP35C TIP36C sub amplifier circuit diagram
LM131
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kt420
Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS
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2N3303
Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any
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Chiana56
2N3303
T1S57
RJh 3347
2N3680
LA 4301
transistor ITT 2907
2N3792
2N3574
BF173
transistor bf 175
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T018 Thyristor
Abstract: IC ST 201A
Contextual Info: SCRs GA200 GA200A GA201 GA201A Nanosecond Switching, Planar GB200 GB20 0A GB201 GB201A FEA TU RES DESCRIPTION • • • • • The Microsemi Nanosecond Thyristor Switch combines the turnon speed of logic level transistors with the high current switching capability inherent in SCRs. With this device
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GA200
GA200A
GA201
GA201A
GB200
GB201
GB201A
GA/GB200
T018 Thyristor
IC ST 201A
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BZX85C12V
Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes
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DO-15
DO-201AD
O-220AC
T0202-3
STGP3NB60HD*
STGP7NB60HD*
STGP3NB60HD
STGP7NB60HD
BZX85C12V
TOSHIBA 2N3055
bta41-600b application
BTA41-600B firing circuit
TAB 429 H toshiba
BZX85C20V
SCR tyn612 pin configuration
picaxe
TYN612 specification
2SA1085E
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UAA2001
Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re
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0HF40
0HF60
0HF80
6FP10
6F100
70HF10
UAA2001
MC8500
micromodule m68mm19
1N9388
74ALS643
2N6058
MC145026
2N5160 MOTOROLA
MC3340 equivalent
pn3402
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axial zener diodes marking code c3v6
Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.
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BR805A
BR81A
BR82A
BR84A
BR86A
BR88A
BR91A
BR92A
BR94A
BR96A
axial zener diodes marking code c3v6
H 48 zener diode
ZENER DIODES CODE ID CHART
diode zener ph c5v6
74151N
HS7030
sescosem
SESCOSEM semiconductor
diode zener BZX 61 C 10
BZX 460 zener diode
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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261801
Abstract: 2n2646 General Electric
Contextual Info: ;„NQV 137*1 _ _R/2 46_ R. S. COM PON ENTS LIMITED^ 13-17 Epworth Street London EC2P 2HA Telephone 01 -253 1222 Precision Timer I.C. Stock No 305-850 DATA S H E E T The f r e q u e n c y caj^aci t o r and connection o f
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400mA
O------16
400mV
261801
2n2646 General Electric
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UA78HGSC
Abstract: SL490DP N82S100 TCA280A ne5534h UA78HGS mw RADIO RECEIVER IC zn414 TCA280A equivalent MM58174 ML929DP
Contextual Info: V o ltag e R eg ulator S electio n C hart Positive Three Terminal Regulators Output Current§ Package + 5V + 6V + 8V + 12V + 15V + 18V + 24V TO-92 LM78L05ACZ — — _ _ LM78L12ACZ LM78L15ACZ 0.1A .0 — — TO-92 LM340LAZ-5 _ _ LM340LAZ-12 LM340LAZ-15
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LM78L05ACZ
LM78L12ACZ
LM78L15ACZ
LM340LAZ-5
LM340LAZ-12
LM340LAZ-15
LM2931Z5
LM78L05ACH
LM78L12ACH
LM78L15ACH
UA78HGSC
SL490DP
N82S100
TCA280A
ne5534h
UA78HGS
mw RADIO RECEIVER IC zn414
TCA280A equivalent
MM58174
ML929DP
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11tA0A12
A025A
A0290
U0U55
A0291
A0292
A0305
A0306
A0A56
A0A59
aeg diode Si 61 L
aeg diodes D6
SGS Transistors
BC23B
SILICONIX U315
MZ306
BY126
bcv59
ac128
2N3680
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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