T-CON SAMSUNG Search Results

2n5551 samsung

Abstract: transistor 2n5550 2N5550 2N5551
Contextual Info: SAMSUNG S E MI CON DU C T DR INC 2N5550 14E D | 7^4142 0007],fi? NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: V ceo=140V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic

KS6041

Abstract: sec 102 M SE x1y2
Contextual Info: SAMSUNG SE MI CON DUCTOR INC 02 • — ' " •— D E 7 T b 4142 0P057Sb 3 • ~0 5756 ' ' KS6041 ' - “- D T - ^ - 13 'û J CMOS DIGITAL INTEGRATED CIRCUIT SCIENTIFIC 10 DIGITS LCD CALCULATOR KS6041 is the CMOS LSI for 10 digits display and the complete single

filpflops

Contextual Info: SAMSUNG S E M I CON DU CT OR INC 02 KS54HCTLS " 7 0 A KS74HCTLS D E I T i b 4 IMS 000b315 D Dual J-K Negative-Edge-Triggered Flip-Flops with Clear - T - % > - 0 7 ~ o ~7 FEATURES DESCRIPTION • Function, pinout, speed and drive compatibility with 54/74LS logic famll/

Contextual Info: SAMSUNG S E M I CON DU CT OR INC OE KS54HCTLS f ì i KS74HCTLS v 1 F e | T U M l M a 000 bE7L s | ~T-*f3-aj • Quad 2-Input NAND Gates with Open-Drain Outputs FEATURES DESCRIPTION • Function, pin-out, speed and drive compatibility with S4/74LS logic family

Contextual Info: PRINTED IN KOREA C ircuit diagrams utilizing SAMSUNG products are included as a means of illustratin g typical sem iconductor applications; consequently, com plete inform ation su fficie n t for con stru ction purposes is not necessarily given The inform ation has been carefully checked and is believed

2n5088 transistor

Abstract: 2N5088 2N6428A
Contextual Info: SAMSUNG S EM I CON DU C T CR INC 2N6428A J*4E D | 7^4142 □ 0 D 7 1 £i 3 fc, | NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Em itter Voltage: V c e o = 5 0 V • Collector D issipation: P c m ax =625m W ABSO LUTE MAXIMUM RATINGS (Ta=25°C)

SOT-23 MARKING T31

Abstract: SOT23s KSR1111 KSR2111
Contextual Info: SAMSUNG SE MI CON DUC TO R INC KSR2111 IME 0 £ 71b4142 0007131 b J PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION T~2>n- 1 3 Blas Resistor Bullt In • Switching Circuit, Inverter, Interface circuit Driver circuit • Bullt In trias Resistor (R=22Kß)

MPS2907A EQUIVALENT

Contextual Info: SAM SU NG SEMI CON DUCTOR INC IME D MPS2907A | T^IMS 0007311 6 | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 GENERAL PURPOSE TRA N SISTO R • Collector-Emltter Voltage: V « o = 6 0 V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

G2E 182

Contextual Info: \ SAMSUNG SEMICONDUCTOR INC OH O O D b D t .0 ; KS54ÀHCT 1 f í O KS74AHCT 4 ~ r:'4 s'~ o ~ 7 Look Ahead Carry Generator FEATURES DESCRIPTION • Compatible Carry Functions for direct ALU con­ nection • Cascadabie to perform look-ahead across n-blt adders.

J303

Abstract: j711 KSR1201 KSR2201
Contextual Info: SAMSUNG S E M I CON DUG TOR 0 | IN Cl^ 3S*l| l ^ E KSR1201 00070b3 M | NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias Resistor Built In T O -9 2 S • Switching circuit, Inverter, Interface circuit Driver circuit • Built In bias Resistor (R,=4.7KO, R,=4.7Kil)

1KS3

Abstract: TAPE RECORDER bias
Contextual Info: SAMSUNG SEMI CON DU CT OR INC 1 û ' DE | TTbMlMS Q0D43MM ñ -. ^ T -5 2 ^ 13 ^ 2 5 LINEAR INTEGRATED CIRCUIT KA2407 DC MOTOR SPEED CONTROLLER The KA2407 is a monolithic integrated circuit designed for DC motor speed controllers. ' FEATURES • High stable operation over a wide range of supply voltage;

MMBT5086

Abstract: MMBA812M6
Contextual Info: ¡SAMSUNG SE MI CON DUC TO R INC MMBA812M6 VTtMlia G00723S 7 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collecfor-Erfiitter Voltage Emitter-Base Voltage Collector Current

MC1488 SAMSUNG

Contextual Info: SAMSUNG _S EM I CONDUCTOR INC ñ&_ ' . ' D E § 7 U 4 1 4 E 0D04L.E3 1 | ~ ' ' T ^ - 7 5 H ¿5 ^ o S ‘ LINEAR INTEGRATED CIRCUIT MCI 488 QUAD LINE DRIVER The MC1488 is a monolithic quad line driver designed to Interface data terminal equipment with data communications equipment in con­

Contextual Info: KMM5816000/T DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The S am sung KMM5816000/T is a 16M bit x 8 D ynam ic RAM high d e nsity m em ory m odule. The S am sung KMM5816000/T con sist o f eight KM41C16000H' DRAMs in 24-pin SOJ/TSOP II package m o unte d on a 30-pin

KA3842D

Abstract: KA3842 KA3842N samsung flyback pin diagram KA3842 14 sop flyback samsung diagram flyback samsung samsung flyback diagram
Contextual Info: SAMSUNG E L E C T R O N I C S I NC 4SE D KA3842 • 7T b4 1M2 QGQTBOb 3 ■ S M 6 K LINEAR INTEGRATED CIRCUIT I . CURRENT MODE PWM CONTROLLER The KA3842 is fixed frequency current-mode PWM con­ troller. It Is specially designed for Off-Line and DC-toDC converter applications with minimal external com­

KAD0808IN

Abstract: KAD0809IN D0809 D0808 ax asp hey ne cmos integrated circuits
Contextual Info: KAD0808/KAD0809 CMOS INTEGRATED CIRCUITS 8-BIT ^-COM PATIBLE A/D CONVERTERS WITH 8-CHANNEL MULTIPLEXER The KAD0808/KAD0809 A nalog -to D igital con verte r is a m o n o lith ic CMOS device w ith an 8-bit re solution , 8-channel in p u t m u ltip le x e r and

ie 10a

Abstract: KSC1394 c10A TRANSISTOR samsung tv
Contextual Info: SAMSUNG S EM I CON DUG TOR INC m E D | 7«,kqma QG Q ta a a;3 | KSC1394 NPN EPITAXIAL SILICON TRANSISTOR T-3 1-1 7 TV VHF TUNER MIXER • H igh Currant G ain Bandw idth Product fT =70 0M H z iyp • H igh Pow er G a ln G p e = 2 0 d B (Min) at f= 2 0 0 M H z

Contextual Info: LINEAR INTEGRATED CIRCUIT KA2186 VIDEO SWITCHING CIRCUIT FOR TV T his integrated c irc u it provides all video s w itc h in g a l­ low ing con nection s between the peri TV plug and video se ctio n in the TV sets. FEATURE • • • • • 1 Video output 750-1 Vp.p no switched.

cny 37

Abstract: cny 42
Contextual Info: S A M S U N G S E M I C O N D U C T O R INC QS I>F| 7 cim:i.4a ODObMlfl 0 J ” KS54HCTLS + Q Ò KS74HCTLS Look Ahead Carry Generator FEATURES DESCRIPTION • Compatible Carry Functions or direct ALU con­ nection • Cascadable to perform look-ahead across n-bit

lm386

Abstract: LM386 SAMSUNG
Contextual Info: LINEAR INTEGRATED CIRCUIT LM386 LOW VOLTAGE AUDIO POWER AMPLIFIER 8 DIP The LM386/S/D is a pow er a m p lifie r designed fo r use in low v o l­ tage con sum er ap plication s. The gain is inte rn a lly set to 20 to keep the external part c o u n t low , but the a d d itio n o f an external

Contextual Info: KM41C1000D CMOS DRAM 1M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 1,048,576 x 1 bit Fast Page M ode C M O S D R A M s. Fast Page M ode o ffe rs high speed random a cce ss of m em ory ce lls within the sam e row. A ccess tim e -6, -7 o r -8 , p o w e r con su m p tio n (Norm al

i7 nehalem

Abstract: servidores mas potentes samsung ddr3
Contextual Info: Cuando nuestra memoria DDR3 te permite hacer más con menos, se revive la imaginación El placer de elegir bien Samsung Semiconductor Europe, 2008 La memoria DDR3 de Samsung está optimizada tanto para ofrecer un mejor rendimiento como para ahorrar energía. Ya esté instalada en

samsung DDR3 SDRAM 2GB

Abstract: i7 nehalem DDR3 DIMM Samsung ddr3 1600 SDRAM
Contextual Info: Memoria DDR3: da oggi potrai Fare più cose con meno energia. Samsung Semiconductor Europe, 2008 e l'Immaginazione spicca 11volo © Samsung Semiconductor Europe 2008 Memoria avanzata DDR3 Samsung per PC Il nuovo standard prestazionale nel campo delle memorie

KS32C6200

Abstract: IEEE1284 parallel port interface 0.5um
Contextual Info: TECHNICAL SUMMARY KS32C6200 MICROPROCESSOR 1. OVERVIEW SAMSUNG’s KS32C6200 16/32-bit RISC microcontroller is designed to provide a cost-effective and high performance micro controller solution for general applications. To reduce total system cost, KS32C6200 also provides 2-ch UART, 2-ch DMA,