T-75 DIODE Search Results

Contextual Info: SWITCHING, GENERAL PURPOSE AND STABISTOR DIODES PRODUCT SELECTION GUIDE SWITCHING H 'H i " U# if f * ? » T *0 7 ? ? , T IB /0 0 • new *» 20 30 30 30 30 35 40 40 40 40 40 70 75 75 75 75 75 75 75 75 75 75 75 75 75 75 80 85 85 100 100 100 100 100 200 200

1N4148WX

Contextual Info: MCC 3 50 m W S W ITC H IN G DIODE / S O T-23 / SURFACE M O U N T _ Package MMBD4148 MMBD4448 BAS 16 BAV70 MMBD7000 BAV99 BAW56 1* 1* 1* 3* 4* 4* 2* 100 100 100 75 too 75 75 0.025 2.5 1.0 2.5 1.0 2.5 2.5 20 75 75 75 50 75 75 .855 1.00 1.25

DIODE 22-35 L

Contextual Info: □IXYS MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA Fast Recovery Epitaxial Diode FRED Module Preliminary data RSM RRM T yp e V MEA75-12 DA 1200 1200 M EK 75-12 DA 1 Ö! 2 3 fc ü i TestC onditions 1 2 fc Ö ! M axim um Ratings U rm TBD U sM T VJ = 45°C; t = 10 ms (50 Hz), sine

DIODE 1N54

Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Contextual Info: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36

DIODE F22

Abstract: 1300 3d
Contextual Info: ptot VCE0 VCB0 VCEX* T/v=25°C min. <W> V 10 tt 1300* 10 tt 1500* 10 tt 1500* t 1700* 10 t 12.5 # 1300* 12.5 tt 1500* 12.5 t t 1500* t 1500* 12.5 t t 1700* 12.5 t 60 400 60 400 60 330 330 60 400 60 400 60 1300 75 75 1500 1700 75 400 90 400 90 330 90 90 330

1n4295

Contextual Info: DIGITRON SEMICONDUCTORS 1N4295 A TEMPERATURE COMPENSATED REFERENCE DIODES MAXIMUM RATING Characteristic Value Maximum zener current, steady state (T = 75°C, free air) 38mAdc Maximum steady state power dissipation ≤ 75°C, free air Derate above 75°C 0.4 watts

Tunnel diode

Abstract: 4525g "tunnel diode" tunnel diodes 7525G D 4515 diode germanium 4515G GERMANIUM TUNNEL DIODE tunnel diode high frequency
Contextual Info: TM ^ bF | E 5 7 Ö E S 5 0000D03 2578252 CU ST OM COMPONENTS 1 |~~ T - ö ' 7 - If 9 4 D 00 0 0 3 INC AMPLIFIER DIODES GERMANIUM fro rm RS Part Number GHz Min ohms ohms 7515G 7520G 7525G 7530G 7540G 15 20 25 30 40 (Typ) 75 75 75 75 75 6015G 6020G 6025G 6030G

MS610

Contextual Info: Three Phase Rectifier Bridges PSD 75 IdAVM = 95 A VRRM = 800-1800 V Preliminary Data Sheet VRSM V 800 1200 1400 1600 1800 VRRM V 800 1200 1400 1600 1800 Type PSD 75/08 PSD 75/12 PSD 75/14 PSD 75/16 PSD 75/18 Symbol Test Conditions IdAV IFSM T C = 85°C, module

Contextual Info: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A VCES = 600 V VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 1 2 5 6 9 10 T NTC 16 15 14 3 4 11 12 7 8 E72873

diode A7

Abstract: E72873 A7 DIODE
Contextual Info: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 1 2 5 6 9 10 T NTC 16 15 14 3 4 7 8 11 12 E72873

A7 DIODE

Abstract: diode a7 75-06A7T
Contextual Info: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4

0496B

Contextual Info: S E M IK R O N V rsm Ifrms m axim um values fo r continuous operation V rrm 110 A Fast Diode1* Modules V I fav (sin. 180; T case = 85 °C; 50 Hz) 58 A 1100 SKKD 75 F 11 1200 SKKD 75 F 12 Symbol Conditions SEMIPACK 2 SKKD 75 F P relim inary data SKKD 75 F

NTC resistor T5

Abstract: MKI 75-06 A7
Contextual Info: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A VCES = 600 V VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T T6 D2 3 11 4 12

NTC resistor T5

Abstract: A7t diode diode a7t MKI 75-06 A7T
Contextual Info: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A = 600 V VCES VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 18 D5 16 14 T2 T T6 D2 3 11 4 12

DIODE S5

Abstract: s501 diode
Contextual Info: Model S-5000 Dip Rotary Code Switch W / Built In Resistors And/Or Diode Array 11 mm Square SPECIFICATIONS General Operating Temp. Range : -25°C T O +75°C Storage Temp. Range : -25°C T O +75°C Sealing Method : O Ring Sealed Electrical Contact Rating Non-Switching

50N60

Abstract: 50n50 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B
Contextual Info: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW

Contextual Info: n L MLO 75 MMO 75 v v c I I A I o t AC Controller Modules |RMS = 86 A V RRM = 1200-1600 V v RSM V RRM V DSM V DRM V V 1200 1600 1200 1600 Symbol MLO Type G1 \ MLO 75-12io1 MLO 75-16io1 86 62 39 A A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine 1150 1230 A A t = 10 ms (50 Hz), sine

1N4775

Abstract: 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 GDGG020
Contextual Info: AMERICAN POWER DEVICES 53E D 073713S 0000020 S •T^TPo5 TCZENER DIODES c DO-7 Case 250 mW, TC DO-7 Case Typ ef Test Current Maximum^ Dynamic Impedance Voltage Temperature Stability vz + IzT ZZT @ IZT AVzrMax. V mA n mV °C O to + 75 -5 5 t o +100 0 t O + 75

EY86

Abstract: HX33 HX31 diode d5c HS40-4 diode D6E HS40A ZC0300 ZC0310 1N5149
Contextual Info: S ILIC O N DIODES Step Recovery Diodes R .F. Po w er Output Type M ax. V r d .c. volts 1N 5149 1N 5150 1N5151 1N 5152 1N5153 1N5154 1N5155 ZC 62 0 ZC 03 0 0 ZC 03 1 0 80 80 75 75 75 35 35 35 75 40 c to t * pF Min. 5-0 50 50 50 50 1 0 1 0 0-6 2-5 1 -9 M ax.

SKM 75 Gb 124 IGBT

Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits VQE 23 F Semitrans M SKM IGBT FF 450
Contextual Info: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges R ge = 20 k £ l T oase = 25/75 °C T oase = 25/75 °C; tp = 1 ms Ptot Tj, Tstg) per IG B T , T oaSe = 25 °C Visol AC, 1 min. DIN 40040 DIN IEC 68T.1 humidity climate

BSM 225

Abstract: siemens igbt BSM 50 gb 100 d siemens igbt BSM 75 gb 100
Contextual Info: SIEMENS BSM 75 GB 100 D BSM 75 GAL 100 D IGBT Module Preliminary Data VCE = 1000 V l c = 2 x 100 A at 7 ^ = 2 5 C / c = 2 x 75 A at T c = 80 C • • • • • Power module Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate

ETX 40

Abstract: InGaAs Epitaxx APD epitaxx ETX1000T epitaxx APD INGAAS avalanche EPITAXX InGaAs Epitaxx APD ETX ingaas apd photodetector
Contextual Info: IDE D | 33b04Dfc. ODQQDSfl 5 EPITAXX INC HIGH SPEED InGaAs PIN PHOTODETECTORS Part Number ETX60B ETX 75 CER-H ETX 75T . ETX100TL ETX 300T •' ETX 75 FJ/FC T - Dark Size Capacitance i/umj Current nA . fpF) 0.1 . . 60 . 0.3 ~ •• ; 75 . • ' Vi , 0.1 •'

Contextual Info: FEATURES - JJ tB 15 300 MHz • 5V CMOS Driver MODEL NO. DS0097 ■ Small .75 Sq. Package PIN Diode Transfer Switch RF4 .75 I .20 .20 £L PART ID E N T IF IC A T IO N T V r .018 D IA 24 P L A C E S .XX = .0 2 .X X X = .0 1 0 LOQIC TABLE RF1 TO RF4 RF2 TO RF3

backward diode

Abstract: "backward diode" SI 4606 4606
Contextual Info: <£? ÎÛ C. <Si:mLconductou _ WO I otw $ im i himinghim, M w uhuM lli 01701 Silicon Switching Diodes * Xa Tri* Wo. tr 1X4148 Irr naec Capacitano* . Zero Volt* Pf 4 75 ua 100 V 1.0 aa 10 rn 25 T" 20 1X4149 75 100 1.0