T-75 DIODE Search Results

Contextual Info: SWITCHING, GENERAL PURPOSE AND STABISTOR DIODES PRODUCT SELECTION GUIDE SWITCHING H 'H i " U# if f * ? » T *0 7 ? ? , T IB /0 0 • new *» 20 30 30 30 30 35 40 40 40 40 40 70 75 75 75 75 75 75 75 75 75 75 75 75 75 75 80 85 85 100 100 100 100 100 200 200

1N4148WX

Contextual Info: MCC 3 50 m W S W ITC H IN G DIODE / S O T-23 / SURFACE M O U N T _ Package MMBD4148 MMBD4448 BAS 16 BAV70 MMBD7000 BAV99 BAW56 1* 1* 1* 3* 4* 4* 2* 100 100 100 75 too 75 75 0.025 2.5 1.0 2.5 1.0 2.5 2.5 20 75 75 75 50 75 75 .855 1.00 1.25

DIODE 22-35 L

Contextual Info: □IXYS MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA Fast Recovery Epitaxial Diode FRED Module Preliminary data RSM RRM T yp e V MEA75-12 DA 1200 1200 M EK 75-12 DA 1 Ö! 2 3 fc ü i TestC onditions 1 2 fc Ö ! M axim um Ratings U rm TBD U sM T VJ = 45°C; t = 10 ms (50 Hz), sine

DIODE 1N54

Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Contextual Info: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36

1n4295

Contextual Info: DIGITRON SEMICONDUCTORS 1N4295 A TEMPERATURE COMPENSATED REFERENCE DIODES MAXIMUM RATING Characteristic Value Maximum zener current, steady state (T = 75°C, free air) 38mAdc Maximum steady state power dissipation ≤ 75°C, free air Derate above 75°C 0.4 watts

Tunnel diode

Abstract: 4525g "tunnel diode" tunnel diodes 7525G D 4515 diode germanium 4515G GERMANIUM TUNNEL DIODE tunnel diode high frequency
Contextual Info: TM ^ bF | E 5 7 Ö E S 5 0000D03 2578252 CU ST OM COMPONENTS 1 |~~ T - ö ' 7 - If 9 4 D 00 0 0 3 INC AMPLIFIER DIODES GERMANIUM fro rm RS Part Number GHz Min ohms ohms 7515G 7520G 7525G 7530G 7540G 15 20 25 30 40 (Typ) 75 75 75 75 75 6015G 6020G 6025G 6030G

A7 DIODE

Abstract: diode a7 75-06A7T
Contextual Info: MWI 75-06 A7 MWI 75-06 A7 T IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Preliminary Data Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4

NTC resistor T5

Abstract: MKI 75-06 A7
Contextual Info: MKI 75-06 A7 MKI 75-06 A7T IC25 = 90 A VCES = 600 V VCE sat typ.= 2.1 V IGBT Modules H-Bridge Short Circuit SOA Capability Square RBSOA Type: 13 NTC - Option: MKI 75-06 A7 MKI 75-06 A7T T1 without NTC with NTC T T5 D1 1 9 2 10 D5 16 14 T2 T T6 D2 3 11 4 12

DIODE S51

Abstract: 5070d diode 513 S5 s513 5030a DIODE S5
Contextual Info: Model S-5000 Dip Rotary Code Switch W / Built In Resistors A nd/O r Diode Array 11 m m Square SP E C IF IC A T IO N S G eneral Operating Temp. Range -25°C T O + 75"C Storage Temp. Range -25°C T O +75°C Sealing Method O Ring Sealed Electrical Contact Rating

Contextual Info: n L MLO 75 MMO 75 v v c I I A I o t AC Controller Modules |RMS = 86 A V RRM = 1200-1600 V v RSM V RRM V DSM V DRM V V 1200 1600 1200 1600 Symbol MLO Type G1 \ MLO 75-12io1 MLO 75-16io1 86 62 39 A A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine 1150 1230 A A t = 10 ms (50 Hz), sine

EY86

Abstract: HX33 HX31 diode d5c HS40-4 diode D6E HS40A ZC0300 ZC0310 1N5149
Contextual Info: S ILIC O N DIODES Step Recovery Diodes R .F. Po w er Output Type M ax. V r d .c. volts 1N 5149 1N 5150 1N5151 1N 5152 1N5153 1N5154 1N5155 ZC 62 0 ZC 03 0 0 ZC 03 1 0 80 80 75 75 75 35 35 35 75 40 c to t * pF Min. 5-0 50 50 50 50 1 0 1 0 0-6 2-5 1 -9 M ax.

DA108S1

Contextual Info: T ^ 7# S G S -T H O M S O N IMlSaaigHHCTISllMllO S M P 7 5 -8 T R IS IL FEATURES • Bidirectional surge arrestor. ■ Very low stand-offvoltage : V rm = 8 V. ■ High repetitive surge c a pa bility: lpp = 75 A 10/1000ns . ■ Very low capacitan ce: C < 75 pF

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 Units VcE S VcG R lc ; IcN IcM R ge = 20 T oase = 25/75 °C Tease = 25/75 °C; tp = 1 ms V ges Pto, Tj, Tstg) Vsol humidity climate per IGBT, T oase = 25 °C AC, 1 min. 4> DIN 40 040 DIN IEC 68 T.1 1700

LS183

Abstract: XLS-10 75GB124D
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 100 / 75

Contextual Info: silìJllCllii V rsm Ifrm s m axim um va lu e s fo r continuous operation V rrm 110 A Ifa v (sin. 180; T ca se Fast Diode1) Modules = 85 °C; 50 Hz) V 58 A 1100 SKKD 75 F 11 1200 S K K D 75 F 12 Symbol Conditions If a v sin. 180; If s m Tvj Tvj i2t T Vj =

diode G21

Abstract: FD4A G22 diode LD4RA LD4A SD15 switching diode g21 DIODE diode G23
Contextual Info: ELECTRICAL CHARACTERISTICS SINGLE HIGH VOLTAGE SWITCHING DIODE Forward Voltage V Dice Type HD3A rw m Max. vF Reverse Current T Ir @ lF Max. @ rr * VR Max. V V mA hA V ns 75 1.2 110 1 75 6 Geometry G19 DUAL HIGH VOLTAGE SWITCHING DIODE V Dice Type HD2A Forward Voltage

semikron skm 75gb

Contextual Info: se MIKRON zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 600 600 100 / 75 2 0 0 /1 5 0 ±20 350 -4 0 . + 125) 150 2500 Rge = 20 Toase = 25/75 °C Tease = 25/75 °C; tp = 1 ms lc IcM V ges per IGBT, T oase = 25 °C Ptot Tj, (Tstg)

Contextual Info: Li IXYS Mil 75-12 A3 MID 75-12 A3 MDI 75-12 A3 IGBT Modules lC25 = 90 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^ C E s a t typ. = Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions

75-06A7T

Contextual Info: Advanced Technical Information MWI 75-06 A7 IC25 = 90 A = 600 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13 1 2 Type NTC - Option MWI 75-06 A7 MWI 75-06 A7T without NTC with NTC 5 6 9 10 T NTC 16 15 14 3 4 7

DS0097

Contextual Info: FEATURES J • 1 5 -3 0 0 MHz MODEL NO. DS0097 ■ 5V CMOS Driver ■ Small .75 Sq. Package , PIN Diode Transfer Switch RF3 .75 JZ I .20 PART ID E N T IF IC A T IO N .20 V -X X .X X X .0 1 8 D IA 24 PLACES = .0 2 = .0 1 0 LOGIC TABLE RF1 TO RF4 RF2 TO RF3

2n6321

Abstract: 2n5320 MOTOROLA 2N53
Contextual Info: 'T-SS'-I ? 2N5320 2N5321 C A SE 79-04, S T Y LE 1 TO-39 TO-2Q5AD MAXIMUM RATINGS Symbol Rating 2N5320 2N5321 Unit Collector-Emltter Voltage VcEO 75 60 Vdc Co Ilector-Base Voltage Vc b O 100 75 Vdc Emitter-Base Voltage Ve b o 7.0 5.0 Vdc Base Current •

1n914 equivalent

Abstract: 1N3067 1N5318 1N4009 equivalent 1N5319 1N814 FD6666 1n903 1n904 1N4950
Contextual Info: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE Continued *RR Bv ns VOLTS MAX 1N4150 C Package pF Equivalent nA •r @ Vr VOLTS @ If M IN MAX @ VOLTS MAX @ mA MAX Package D O -7/D O -35 4.0 75 100 @ 50 1.0 @ 200 2.5 DO-35 1N 3600 1N4305 4.0 75 100

LS 7475

Abstract: 16DI 7475 truth table DN74LS75 TTL 7475
Contextual Info: DN74LS75 LS T T L DN74LS Series DN74LS75 £ ^ 74^75 4 -b it Bistable Latches • P-2 D escription DN74LS75 contains four bistable latches with Q and Q output terminals. ■ Features • Common enable inputs for each two circuits • Q and 0 outputs • Wide operating temperature range Ta = - 2 0 to +75 C

Contextual Info: 1N4370 thru 1N4372 INTERNATIONAL SEMICONDUCTOR, INC. 1N746 thru 1N759 400 MILLIW ATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES MAXIMUM RATINGS O p e ra tin g T e m pe ratu re: -65 °C to +175 °C -65 °C to +175 °C 400 mW at 75 °C 4.0 m W /'C above 75 °C