T-75 DIODE Search Results

Contextual Info: SWITCHING, GENERAL PURPOSE AND STABISTOR DIODES PRODUCT SELECTION GUIDE SWITCHING H 'H i " U# if f * ? » T *0 7 ? ? , T IB /0 0 • new *» 20 30 30 30 30 35 40 40 40 40 40 70 75 75 75 75 75 75 75 75 75 75 75 75 75 75 80 85 85 100 100 100 100 100 200 200

DIODE 22-35 L

Contextual Info: □IXYS MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA Fast Recovery Epitaxial Diode FRED Module Preliminary data RSM RRM T yp e V MEA75-12 DA 1200 1200 M EK 75-12 DA 1 Ö! 2 3 fc ü i TestC onditions 1 2 fc Ö ! M axim um Ratings U rm TBD U sM T VJ = 45°C; t = 10 ms (50 Hz), sine

DIODE 1N54

Abstract: 1N60 germanium diode 1N34 1N542 1N48 diode 1N38A diode 1N69a 1n81a 1N75 1N68
Contextual Info: GERMANIUM DIODE TYPE PEAK REV ERSE V O LTA G E AVERA G E FO RW ARD CU RREN T MINIMUM FO R W A R D CU RREN T A T 1 V O LT M AXIM UM REV ERSE CU RREN T A T 25°C V O LT S mA mA pA 1N34 75 50 5 50 a t -10V 1N34A 75 50 5 30 a t -10V 1N35 75 22.5 7 10 at -10V 1N36

DIODE S51

Abstract: 5070d diode 513 S5 s513 5030a DIODE S5
Contextual Info: Model S-5000 Dip Rotary Code Switch W / Built In Resistors A nd/O r Diode Array 11 m m Square SP E C IF IC A T IO N S G eneral Operating Temp. Range -25°C T O + 75"C Storage Temp. Range -25°C T O +75°C Sealing Method O Ring Sealed Electrical Contact Rating

Contextual Info: n L MLO 75 MMO 75 v v c I I A I o t AC Controller Modules |RMS = 86 A V RRM = 1200-1600 V v RSM V RRM V DSM V DRM V V 1200 1600 1200 1600 Symbol MLO Type G1 \ MLO 75-12io1 MLO 75-16io1 86 62 39 A A A 10 ms 50 Hz , sine 8.3 ms (60 Hz), sine 1150 1230 A A t = 10 ms (50 Hz), sine

Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 Units VcE S VcG R lc ; IcN IcM R ge = 20 T oase = 25/75 °C Tease = 25/75 °C; tp = 1 ms V ges Pto, Tj, Tstg) Vsol humidity climate per IGBT, T oase = 25 °C AC, 1 min. 4> DIN 40 040 DIN IEC 68 T.1 1700

semikron skm 75gb

Contextual Info: se MIKRON zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR Units 600 600 100 / 75 2 0 0 /1 5 0 ±20 350 -4 0 . + 125) 150 2500 Rge = 20 Toase = 25/75 °C Tease = 25/75 °C; tp = 1 ms lc IcM V ges per IGBT, T oase = 25 °C Ptot Tj, (Tstg)

2n6321

Abstract: 2n5320 MOTOROLA 2N53
Contextual Info: 'T-SS'-I ? 2N5320 2N5321 C A SE 79-04, S T Y LE 1 TO-39 TO-2Q5AD MAXIMUM RATINGS Symbol Rating 2N5320 2N5321 Unit Collector-Emltter Voltage VcEO 75 60 Vdc Co Ilector-Base Voltage Vc b O 100 75 Vdc Emitter-Base Voltage Ve b o 7.0 5.0 Vdc Base Current •

Contextual Info: 1N4370 thru 1N4372 INTERNATIONAL SEMICONDUCTOR, INC. 1N746 thru 1N759 400 MILLIW ATT HERMETICALLY SEALED GLASS SILICON ZENER DIODES MAXIMUM RATINGS O p e ra tin g T e m pe ratu re: -65 °C to +175 °C -65 °C to +175 °C 400 mW at 75 °C 4.0 m W /'C above 75 °C

Contextual Info: FEA TU R ES MODEL NO. DS0097 • 1 5 -3 0 0 MHz Ö J ■ 5V CMOS Driver Small .75 Sq. Package PIN Diode Transfer Switch X F ER .75 PART ID E N T IF IC A T IO N I .20 .20 V .018 D IA 24 P L A C E S -XX .XXX = .02 = .010 LOGIC TABLE RF1 TO RF4 RF2 TO RF3 RF1 TO RF2

DO-41 package 1N4148 CHARACTERISTICS

Abstract: DO-41 package 1N4148 1n9145 1N4148 1N4150 1N4151 1N4448 1N4531 1N914 1N914A
Contextual Info: DO-35 SWITCHING DIODES 500 MW Electrical Characteristics (At Ta=2S°C, Unless Otherwise Specified Type a t V R P,v v F @ lF c d & Vr *0 'fm trr (mA) (mA) nsec No. max (MA) (W) min (V) max (V) (V) (mA) max (PF) (V) 1N914 5 75 0.5 100 1 10 4 75 225 4 1N914A

75N10

Contextual Info: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V

Contextual Info: J □IXYS p VDSS ^D 25 IXTH/IXTM 67 N10 100 V IXTH/IXTM 75 N10 100 V M e g a M O S F E T 67 A 75 A D S on 25 m£2 20 mß N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25°C to 150°C 100 V vDGR T j = 25 °C to 150°C; RGS = 1 Mi2 100 V

G 50N60

Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
Contextual Info: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C

SPT7835

Abstract: SPT7835SCD SPT7835SCN SPT7835SCS
Contextual Info: SPT7835 fà S P T 10-BIT, 5 MSPS, 75 mW A/D CONVERTER SIGNAL PROCESSINGTECHNOLOGIES FEATURES • • • • • • • • • • APPLICATIONS Monolithic 5 MSPS Converter 75 mW Power Dissipation On-Chip Track-and-Hold Single +5 V Power Supply TTUCM OS Outputs

Contextual Info: □ IX Y S Advanced Technical Information Low VrP/ . IGBT u t s a t with Diode . ISOPLUS247 OES _ _ . ^025 ” 75 A ^ C E (s a t) ” 1-7 V (Electrically Isolated Back Surface) Symbol TestC onditions V v CGR Tj Tj V v GEM ^C25 ^C100 ^CM Maximum Ratings

DIODE LL4148

Abstract: MELF DIODE color bands LL4148 melf diode color
Contextual Info: 3Q T LL4148 REVERSE VOLTAGE FORWARD CURRENT Switching Diode 75 Volts 0.15 Amperes MINI MELFÍLL-3 4 Features • Silicon eltaxlal planar diode • High speed switching diode • 500mW bower dissipation Mechanical Data T • Cases:Min-MELF glass case • Polarity:Color band denotes cathode

Contextual Info: SOLID-STATE POWER FUNCTIONS TYPE TIXH701 HIGH-CURRENT SWITCH • 75-A Continuous Collector Current • VcE sat < 1-3 V a t lc = 75 A, I b = 7.5 A • 300 Watts at 25°C Case Temperature OB H C < r "o r m 3s |description za o2 The T IX H 701 is a high-current complimentary-symmetry power stage which is well suited for use in

zener IN 5232

Abstract: 5277A 1N52658
Contextual Info: C T SGS-THOMSON *7 # GENERAL PURPOSE & INDUSTRIAL m m ì& jè w w è s ZENER DIODES PREFERRED SERIES JEDEC SERIES Type STANDARD ZENER DIODES Vz t ' I z t * rZT 1 *2T* 'Z T * rZK 1 'Z K Ir ' V r “ VZ Vr Tam b 25 °C 500 mW / nom m ax V (O) Tgirij) — 75°C Tj max

BAS16HT1

Contextual Info: Switching Diode BAS16HT1 1 CATHODE 2 ANODE 1 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol V R IF I FM surge Value 75 200 500 Unit Vdc mAdc mAdc Symbol PD Max 200 Unit mW R θJA T J , T stg 1.57 635

50n60

Abstract: 50N60AU1
Contextual Info: HiPerFASTTM IGBT with Diode IXGK 50N60AU1 Combi Pack VCES IC25 VCE sat tfi = = = = 600 V 75 A 2.7 V 275 ns Advanced Technical Information Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600

S3H 02 diode

Abstract: hp 5082 2207 U1Z 09 5082-2202 F 5082 HP 2202 5082-2200 DIODE S3H
Contextual Info: SCHOTTKY BARRIER DIODES FOR STRIPLINE, MICROSTRIP MIXERS AND DETECTORS COMPONENTS SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T PACKARD 5082 - 2200 / 01/ 0 2 /0 3 5082 - 2207 / 08 / 09/10 5082 2 7 6 5 /6 6 5082 - 2774/75 5082 - 2 7 85/8 6

Contextual Info: Technical Specification IQ32-HP Family 9-75 V 100 V 1.8-48 V 165 W 2250 V dc Half-brick Continuous Input Transient Input Outputs Max Power Isolation DC-DC Converter A 32 @ T U 5V O IN V 75 9- IQ 32 05 0H PC 32 N R S- G The InQor Half-brick converter series is composed

50n60

Abstract: ixsk50n60au1 50N60AU1
Contextual Info: IGBT with Diode IXSK 50N60AU1 Combi Pack VCES IC25 VCE sat = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous