T RF TRANSITOR Search Results

175-200MHZ

Contextual Info: MITSUBISHI RF POWER MODULE M67730L 175-200MHZ, 12.5V, 30W, FM MOBILE RADIO BLOCK DIAGRAM P IN : P in RF INPUT <g VCC1 U t. DC SUPPLY 2 n d DC SUPPLY RF OUTPUT FIN @ VCC2 @PO ®GND ABSOLUTE MAXIMUM RATINGS Tc = 2 5 unless otherwise noted) Symbol Vcc Icc

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:

T rf transitor

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2933 NPN E P IT A X IA L P L A N A R T Y P E DESCRIPTION OUTLINE DRAWING 2SC2933 is silicon NPN epitaxial planar type transitor specifically designed for power amplifiers in 800 ~ 940MHz band. Dimensions in mm FEATURES • High gain. High efficiency:

2N3927

Abstract: 2N3926 SD1072 SD1062
Contextual Info: H n M T 5 M/ m I# IV IIC rO S e iI P ro g re s s P o w e re d b y T e c h no log y Commerce Drive Montgomeryville, PA 18936Tel: 215 631 -9840 N3926/2N3927 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS • ■ ■ ■ ■ . ■ FREQUENCY

BFP405

Abstract: BGA420 S21216
Contextual Info: BFP405 NPN Silicon RF Transistor • For low current applications 3 • For oscillators up to 12 GHz 2 4 • Noise figure F = 1.25 dB at 1.8 GHz 1 outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

INFINEON BFP420 Ams

Abstract: BFP420 BGA420
Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP405F

Abstract: BFP420F
Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP420F

Abstract: BFP520F
Contextual Info: BFP520F NPN Silicon RF Transistor* • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 1 Outstanding Gms = 23 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability

BFP420 application notes

Contextual Info: BFP420 NPN Silicon RF Transistor • For high gain low noise amplifiers 3 • For oscillators up to 10 GHz 2 4 • Noise figure F = 1.1 dB at 1.8 GHz 1 outstanding Gms = 21 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP520

Abstract: BGA420
Contextual Info: BFP520 NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz and 2 mA / 2 V 2 4 Outstanding Gms = 23.5 dB 1 Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metallisation for high reliability

BFP540F

Contextual Info: BFP540F XYs NPN Silicon Germanium RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding G ms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w " ! A T s 

BFP450

Abstract: BGA420
Contextual Info: BFP450 NPN Silicon RF Transistor • For medium power amplifiers 3 • Compression point P -1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 15.5 dB at 1.8 GHz 2 4 1 Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency f T = 24 GHz • Gold metallization for high reliability

BFP420F

Contextual Info: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

TRANSISTOR MARKING YB

Abstract: BFP420F BFP540F s parameters 4ghz
Contextual Info: BFP540F NPN Silicon RF Transistor • For highest gain low noise amplifier 3 at 1.8 GHz 2 4 1 • Outstanding G ms = 20 dB Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET  45 - Line to p v ie w " ! A T s  d ir e c tio n o f u n r e e lin g

Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

marking ats

Abstract: BFP540F
Contextual Info: BFP540F XYs NPN Silicon RF Transistor • For highest gain low noise amplifier 3 2 at 1.8 GHz 4 • Outstanding Gms = 20 dB 1 Noise Figure F = 0.9 dB • Gold metallization for high reliability • SIEGET TSFP-4 45 - Line to p v ie w 3 4 A T s 1 2 d ir e c tio n o f u n r e e lin g

2SA1073

Abstract: 2SA1072 2sc2523
Contextual Info: cP January 1990 Edition 1.1 - - - FUJITSU PRODUCT PROFILE - 2SA1072, 2SA1072A, 2SA1073 Silicon High Speed Power Transistor DESCRIPTION The 2SA1072/2SA1072A/2SA1073 are silicon P N P general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transitor RET

BFS360L6

Abstract: BFR36 BFR360L3
Contextual Info: BFS360L6 NPN Silicon RF Transistor 4 Preliminary data
Low voltage/ Low current operation 3 5
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1
Low noise figure: 1.0 dB at 1.8 GHz Built in 2 transitors TR1, TR2: die as BFR360L3

marking K "micro x"

Abstract: MICROWAVE TRANSITOR transistor "micro-x" "marking" 3 GHZ micro-X Package BFY450
Contextual Info: BFY450 HiRel NPN Silicon RF Transistor • HiRel Discrete and Microwave Semiconductor • For Medium Power Amplifiers • Compression Point P-1dB = 19 dbm 1.8 GHz Max. available gain Gma = 16 dB at 1.8 GHz • Hermetically sealed microwave package • Transitor frequency fT = 20 GHz

Contextual Info: BFS360L6 NPN Silicon RF Transistor* • Low voltage/ Low current operation 4 • For low noise amplifiers 3 5 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 • Low noise figure: 1.0 dB at 1.8 GHz • Built in 2 transitors TR1, TR2: die as BFR360L3

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

murata cfu455

Abstract: 6 channel Audio MIXER SCHEMATIC DIAGRAM CFU455 NEOSID t1 NEOSID S028 SSSB150 NEOSID 22 RF limiter PIN diode PIN diode Limiter
Contextual Info: ‘Bwmcimn Silicon s y s te m s LM SSSB150 ultra LOW Power FM Radio Receiver The SSSB150 is a single conversion receiver complete with RF amplifier/mixer/oscillator/IF amplifier and detector. It features very low power consumption and operation from 1.05 to 5 V supply. The device can be powered-down to a

marking code CB SMD tr2

Abstract: TRANSISTOR SMD MARKING CODE ce marking code CB SMD ic MARKING CODE SMD IC BFR360L3 BFR460L3 BFS360L6 BFS466L6 SMD 6PIN IC MARKING CODE SMD MARKING CODE 102c
Contextual Info: BFS466L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR360L3

transistor SMD 12E

Abstract: SMD 6PIN IC MARKING CODE TRANSISTOR SMD MARKING CODE ad SMD 6PIN IC MARKING CODE p BFS36
Contextual Info: BFS469L6 NPN Silicon RF TWIN Transistor* • Low voltage/ low current applications 4 • Ideal for VCO modules and low noise amplifiers • World's smallest SMD 6-pin leadless package 3 5 2 6 1 • Built in 2 transitors TR1: die as BFR460L3, TR2: die as BFR949L3