T D2012 Search Results

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

Transistor D2010

Abstract: transistor d2012 D2009 transistor d2008 D2012 T D2012 transistor D2006 D2010 d2014 dagnall electronics D2016
Contextual Info: DAGNALL ELECTRONICS LIMITED Shuttleworth Road, Elms Industrial Estate, Bedford. MK41 0EP UK TEL +44 0 1234 330077 FAX +44(0)1234 330088 E-mail sales@dagnall-electronics.com Iss 1 25/10/02 • 1 of 4 P R O D U C T D A T A S H E E T 1.5VA PCB MOUNTED ENCAPSULATED TRANSFORMER

d2012 mosfet

Abstract: D2010 P H D2010 d2009 D2017 "MOSFET Modules" T D2012 D2025 MOSFET d2010
Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision HERMETIC MOSFET MODULES N - C h a n n e l M O S F E T C H A R A C T E R IS T IC S Continuous Drain Current lc @ Tc-25°C Pulsed Drain Current Tc=25°c 1 ms Volts Amps Amps 60 2 0 11’ 200 0.028

Contextual Info: bGE D • 0133187 ODOOTbfl 143 ■ S H L B SEMELAB PLC " T " ’3 > ' Z ^ SEMELAB D2012UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 1 0 W -2 8 V - 1GHz SINGLE ENDED MECHANICAL DATA Dimensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN

J1-0603

Abstract: SSD2119 LM LED driver SD card socket, footprint to PCB transistor d2012 HDR 2x5 GCM155R71C104KA HDR1X4 microSD card adapter circuit diagram 60pin LCD RGB
Contextual Info: Stellaris Intelligent Display Module with 3.5" Landscape Display Reference Design Kit User ’s Manual RDK-BDC-06 Co pyrigh t 2 008– 201 0 Te xas In strumen ts Copyright Copyright © 2008–2010 Texas Instruments, Inc. All rights reserved. Stellaris and StellarisWare are registered trademarks of Texas Instruments.

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

D2012UK

Abstract: k 1413 FET
Contextual Info: T D2012UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2012UK

Abstract: transistor D2012
Contextual Info: T D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2012UK

Contextual Info: T D2012UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2012UK

Contextual Info: T D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N ty p 1 A B 3 D ( 2 p ls ) F ( 2 p ls ) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

D2012

Contextual Info: SAW Bandpass Filter 201532B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

8930

Abstract: D2012
Contextual Info: SAW Bandpass Filter 203624B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

798006

Abstract: D2012 NM3016-CS02 9393 MARKING
Contextual Info: SAW Bandpass Filter 203650B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

D2012

Abstract: Bandpass Filter 1500 MHz
Contextual Info: SAW Bandpass Filter 203626B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

T D2012

Abstract: D2012 201346b
Contextual Info: SAW Bandpass Filter 201346B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

201360B

Abstract: D2012
Contextual Info: SAW Bandpass Filter 201360B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2

D2012

Abstract: 59070
Contextual Info: SAW Bandpass Filter 243101B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

80586

Abstract: D2012
Contextual Info: SAW Bandpass Filter 203305B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

D2012

Contextual Info: SAW Bandpass Filter 252605B 1. Features IF bandpass filter High attenuation Single-ended operation Dip Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 Pin Configuration Dimensions shown are nominal in millimeters

NM6031

Abstract: D2012
Contextual Info: SAW Bandpass Filter 262002B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

D2012

Abstract: 271101B
Contextual Info: SAW Bandpass Filter 271101B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

62944

Abstract: D2012
Contextual Info: SAW Bandpass Filter 201140B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

27030

Abstract: D2012
Contextual Info: SAW Bandpass Filter 202548B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

1080b

Abstract: D2012 201080B
Contextual Info: SAW Bandpass Filter 201080B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration