T 3055 Search Results

93CS56

Abstract: doorbell ID l960 pci9080 9060ES 93C06 NM93CS06 NM93CS46 PCI9060ES doorbell
Contextual Info: PCI 9060ES T e c T T T T S T T ^ T T November 1995 VERSION 1.0 PCI Bus Master Interface Chip for Adapters and Embedded Systems Features General Description PCI Bus Master and Bus Slave transfers up to 132 megabytes/sec supporting three architectures: - PCI Direct Master adapter

72ls

Contextual Info: 37E m D M 305571 IHAS Q Q 2 S tì M cl HIgh-Reliability High-Speed CMOS Logic ic s _ HARRIS CD54HC258/3A CD54HCT258/3A SEMICOND SECTOR • ^ 4 U -ò > I elee Quad 2-Line-to-4-Line Data Selector T W -T J -S I The RCA CD54HC258 and CD54HCT258 are quad 2-input

3055 5C pnp transistor

Abstract: 3055 5c pnp transistor 3055 3055 transistor 3055 la transistor 2N 3055 2N 3055 transistor 468 2n 3055 transistor 3055 pnp
Contextual Info: * 2 N 3055 S PNP S IL IC O N T R A N S I S T O R , H O M O B A S E T R A N S IS T O R P N P S IL IC IU M , H O M O B A S E A Devices u n d er C C Q 1971 n° 100 D is p o s it if s s o u m is a u C o n t r ô le c e n tra lis é d e q u a lit é (1 9 7 1 n ° 100)

2SC3055

Abstract: E3 37497 2sc3055 transistor high power switching transistor
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*

black and white cathode ray tube

Abstract: THOMSON power grid TUBES cathode ray
Contextual Info: CRM 91 CATHODE RAY T U B E R A T IN G . Heatec Voltage . 2.0 H eater C u rre n t Am ps. 1.4 Maximum Anode Voltage . 6,000 T Y P IC A L O P E R A T IO N .

VEB mikroelektronik

Abstract: Datenblattsammlung mikroelektronik datenblattsammlung U880D A4510D VEB M ik ro e le k tro n ik u880 U7660 Erfurt Mikroelektronik
Contextual Info: o = in ] S [ h o = ü @ e iB i< b n a r iil- c EÎE' D Â 1b ^ feLÂ 'î l¡ SM /EháLUfi^G e le k t r o n is c h e b g u g t e im n t e •- 2 / S ;■ D A T E N B L A T T S A M M L U N G "Elektronische Bauelemente" Ausgabe 2/88 13 : " N e u e un d w e i t e r e n t w i c k e l t e

black and white cathode ray tube

Abstract: THOMSON power grid TUBES
Contextual Info: CRM 92 C A T H O D E RAY T U B E R A T IN G . H eater Voltage . 2.0 Heater C u rre n t Am ps. . 1.4 M aximum Anode Voltage .

Contextual Info: Feat ur es Single P ow er Supply R e a d an d W r i t e V o l t a g e , 5 V ± 5% Hi gh P e r f o r m a n c e j 200 ns M a x i m u m A c c e s s T i m e l m Ë L 6 m s T y p i c a l S e c t o r Wr i t e CMOS Low Power Consumption 25 m A T yp i c a l A c t i v e C u r r e n t By t e M o d e

je 3055

Abstract: ST 3055 3055 la boitier to3 2N 3055 BDX14 BDX18 2N3054 pacb 3055 pnp
Contextual Info: PNP POWER TRANSISTO RS T R A N S IS T O R S D E P U IS S A N C E PN P Complementary of 2N 3054, 2N 3055 Complémentaires des 2 N 3 0 5 4 , 2 N 30 55 TECHNOLOGICAL DATA D O N N E E S T E C H N O L O G IQ U E S - General purpose Material : Silicon Structure : Epitaxial base

pa 3029 b

Abstract: 0j26
Contextual Info: I CSR23 MIL-C-39003/03 Solid Tantalum Capacitors M a llo r Y GENERAL SPECIFICATIONS E xtend ed C apa citance G ra ded Fa ilu re R ates D C Leakage: A t +25°C - S ee T a b le Lim it A t+ 8 5 ° C - 10 x T a b le Lim it A t +125°C - 12.5 x T a ble Lim it

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TI1131

Abstract: terminals of 2n3055 TI-487 TI487 2N4005 2N1047 2N389 2N122 TI-1151 TI-1131
Contextual Info: Metal Can Power H igh R eliability Professional Typ es contin u ed Device Type 2N6272 2 N 40 0 3 2N6271 2 N 62 7 3 2N 6 3 2 2 2N 63 2 3 2N 63 2 4 2N 63 2 5 Polarity N PN NPN N PN NPN N PN NPN N PN NPN Outline T O -6 3 T O -6 3 T O -3 T O -6 3 T O -3 T O -6 3

Contextual Info: R fiL T R M SURFACE MOUNT MICROPROCESSOR CRYSTAL • FEATURES • 1.7 mm MAXIMUM HEIGHT • THREE 3 OPTIONAL FOOTPRINTS • LOW COST AT CUT PERFORMANCE • SPECIFICATIONS SERIES L18A, B, C 9 .0 0 M H z T O 40 .0 0 M H Z (F U N D A M E N T A L ) 40 .0 0 M H z T O 70 .0 0 M H z (T H IR D O V E R T O N E )

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

TO220B

Abstract: TO-220B 45V PNP 2A & 1.5A MH8501 2N3055 2N 6292 TO2208 MH8222 3055 3,5A METRIX+MX+220B
Contextual Info: Power Tron/i/tor/ T0-220B T O -3 r M a x im u m R a tin g s E le c tric a l C h a ra c te r is tic s @ T c - 2 5 ° C T Y P E NO. NPN PN P PD lC BVc b O LVc e o LVc e R LV Ce v b v ebo •CEX h F E @ V CE @ lc m in . /m a x . @ T c = 2 5 °C V C E s a t @ t c / ' B

Contextual Info: n C I T a l A n B C W B B SURFACE MOUNT TEMPERATURE COMPENSATED CRYSTAL o s c il l a t o r w it h v o l t a g e c o n t r o l o p t io n SERIES RTX-204 AND RTV-204 • FEATURES • ULTRA MINIATURE PACKAGE • EXCELLENT FREQUENCY STABILITY AND AGING • 5.0 V OR 3.0 V SUPPLY VOLTAGE

MC790P

Abstract: MC7915 TO-3 MC7912 K lt529 MC7905 MC-7816 MC7815 TO-92 221A-04 MC7800 transistor wc TO39
Contextual Info: M M O T O R O MC7900 Series L A T H R E E -T E R M IN A L N E G A T IV E V O LT A G E R E G U L A T O R S The MC7900 Series of fixed output negative voltage regulators are intended as complements to the popular MC7800 Series devices. These negative regulators are available in the same

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

Contextual Info: RRLTR#n MONOLITHIC CRYSTAL FILTERS • FEATURES • STABLE TEMPERATURE CHARACTERISTICS • CUSTOM SPECIFICATIONS AVAILABLE • SPECIFICATIONS CHANNEL MODEL S P A C IN G R IP P L E CENTER PASS FREQUENCY B A N D W ID T H IN S E R T IO N STO P T E R M IN A T IN G

Contextual Info: RfilTR0il SURFACE MOUNT MICROPROCESSOR CRYSTAL • FEATURES • 1.1 mm HEIGHT • THREE 3 OPTIONAL FOOTPRINTS • LOW COST AT CUT PERFORMANCE • SPECIFICATIONS SERIES L11A, B, C 10.00 M H z T O 4 0 .0 0 M H z (F U N D A M E N T A L ) 4 0 .0 0 M H z T O 10 0.00 M H z (T H IR D O V E R T O N E )

40629 Transistor

Abstract: transistor 2n5321 rca RCA 40250 RCA 40250 transistor BFT19B 2n5298 40629 2N5415 2N2102 2N3879 2N5320
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T t o 25 0 M H z . . . I r t o 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053

50-150B

Abstract: 5047B transil 428 5033B 50-39B 50-33B
Contextual Info: TRANSIL T R A N S IE N T V O L T A G E S U P P R E S S O R S " T R A N S IL " T ypei Unidirec­ tional 3 KW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW 1 ms expo.

TIP41C EQUIVALENT

Abstract: tip 147 TRANSISTOR equivalent TIP418 TIP 122 transistor TIP 41 transistor tip 127 TRANSISTOR equivalent TIP41A equivalent tip 147 TRANSISTOR tip 141 equivalent tlp418
Contextual Info: T Y P ES TIP41, TIP41A, TIP41B, TIP41C N -P -l SIN GLE-D IFFU SED M ESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R AN D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E WITH T IP 4 2 , T IP 4 2 A , TIP 4 2 B , T IP 42C