T 3055 Search Results

3055 5C pnp transistor

Abstract: 3055 5c pnp transistor 3055 3055 transistor 3055 la transistor 2N 3055 2N 3055 transistor 468 2n 3055 transistor 3055 pnp
Contextual Info: * 2 N 3055 S PNP S IL IC O N T R A N S I S T O R , H O M O B A S E T R A N S IS T O R P N P S IL IC IU M , H O M O B A S E A Devices u n d er C C Q 1971 n° 100 D is p o s it if s s o u m is a u C o n t r ô le c e n tra lis é d e q u a lit é (1 9 7 1 n ° 100)

2SC3055

Abstract: E3 37497 2sc3055 transistor high power switching transistor
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D E3 3?»H7b2 QQlbSbD a S F M I January 1990 i 9 i T - r 'T m!on1-1_ P R O D U C T P R O F I L E = ¥ FUJITSU - ' 2SC3055 Silicon High Speed Power Transistor DESCRIPTION Th e 2SC 3055 is a silicon NPN planar general purpose, high power switching tran*

black and white cathode ray tube

Abstract: THOMSON power grid TUBES cathode ray
Contextual Info: CRM 91 CATHODE RAY T U B E R A T IN G . Heatec Voltage . 2.0 H eater C u rre n t Am ps. 1.4 Maximum Anode Voltage . 6,000 T Y P IC A L O P E R A T IO N .

black and white cathode ray tube

Abstract: THOMSON power grid TUBES
Contextual Info: CRM 92 C A T H O D E RAY T U B E R A T IN G . H eater Voltage . 2.0 Heater C u rre n t Am ps. . 1.4 M aximum Anode Voltage .

je 3055

Abstract: ST 3055 3055 la boitier to3 2N 3055 BDX14 BDX18 2N3054 pacb 3055 pnp
Contextual Info: PNP POWER TRANSISTO RS T R A N S IS T O R S D E P U IS S A N C E PN P Complementary of 2N 3054, 2N 3055 Complémentaires des 2 N 3 0 5 4 , 2 N 30 55 TECHNOLOGICAL DATA D O N N E E S T E C H N O L O G IQ U E S - General purpose Material : Silicon Structure : Epitaxial base

diode E1110

Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Contextual Info: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

TI1131

Abstract: terminals of 2n3055 TI-487 TI487 2N4005 2N1047 2N389 2N122 TI-1151 TI-1131
Contextual Info: Metal Can Power H igh R eliability Professional Typ es contin u ed Device Type 2N6272 2 N 40 0 3 2N6271 2 N 62 7 3 2N 6 3 2 2 2N 63 2 3 2N 63 2 4 2N 63 2 5 Polarity N PN NPN N PN NPN N PN NPN N PN NPN Outline T O -6 3 T O -6 3 T O -3 T O -6 3 T O -3 T O -6 3

DA 2688

Abstract: transistor DA 2688 LT 5265 transistor mj 3055 c2688 C-2688 equivalent transistor TIP3055 c2688 L c2688 transistor tRANSISTOR c2688
Contextual Info: TEXAS r ÌNSTR 8961726 TEXAS IN STR 62C OPTO 37004 TIP3055 N-P-N SILICON POWER TRANSISTOR T - 3 3 DECEMBER 1970 - REVISED OCTOBER 1884 Designed for Complementary Use with TIP2955 9 0 W at 2 5 ° C C ase T emperature 15 A Continuous Collector Current Plastic-Case Version of 2N 3055

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

Contextual Info: RfilTR0il SURFACE MOUNT MICROPROCESSOR CRYSTAL • FEATURES • 1.1 mm HEIGHT • THREE 3 OPTIONAL FOOTPRINTS • LOW COST AT CUT PERFORMANCE • SPECIFICATIONS SERIES L11A, B, C 10.00 M H z T O 4 0 .0 0 M H z (F U N D A M E N T A L ) 4 0 .0 0 M H z T O 10 0.00 M H z (T H IR D O V E R T O N E )

40629 Transistor

Abstract: transistor 2n5321 rca RCA 40250 RCA 40250 transistor BFT19B 2n5298 40629 2N5415 2N2102 2N3879 2N5320
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T t o 25 0 M H z . . . I r t o 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053

50-150B

Abstract: 5047B transil 428 5033B 50-39B 50-33B
Contextual Info: TRANSIL T R A N S IE N T V O L T A G E S U P P R E S S O R S " T R A N S IL " T ypei Unidirec­ tional 3 KW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW BZW 1 ms expo.

TIP41C EQUIVALENT

Abstract: tip 147 TRANSISTOR equivalent TIP418 TIP 122 transistor TIP 41 transistor tip 127 TRANSISTOR equivalent TIP41A equivalent tip 147 TRANSISTOR tip 141 equivalent tlp418
Contextual Info: T Y P ES TIP41, TIP41A, TIP41B, TIP41C N -P -l SIN GLE-D IFFU SED M ESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R AN D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E WITH T IP 4 2 , T IP 4 2 A , TIP 4 2 B , T IP 42C

2N3055 TO-220

Abstract: 7 amps pnp transistor 2N3055 2N6103 B0243C 2N3055 TO220 BD243 TRANSISTOR T0220 2N6101 75W PNP
Contextual Info: NPN DIFFUSED JUNCTION T A B L E 1 - NPN S ILIC O N D IF F U S E D JU N C T IO N T R A N S IS T O R S The transistors shown in this table are designed for high current, high dissipation applications where a large safe operating area is required. Typical applications areas include a wide variety

TIP42C EQUIVALENT

Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C

2N2147

Abstract: fet 2n2646 2n2926 2n3055 tos 2N1305 npn 2N2926 2N1304 2n1304 transistor 2N1309 2N1308
Contextual Info: 57 T ransistors Continued Notes 1> M inim um value {2 Average value (3> Max. unilateralized power gain (4) Max. frequency o f oscillation {5) W ith heat sink Pto t: Max. total dissipation in free air a t 25°C ambient temp. Vcbo: Max. collector-to-base voltage, em itter

Brown Boveri induction Motor

Abstract: sj 2025 ic sj 2025 ASEA fast thyristor berulub F GD Rectifiers BROWN BOVERI servo motor bn16 brown Boveri diode Diode BN16
Contextual Info: IGBT Module Half-Bridge Configuration VII200-12G4 IC DC VCES VCE(sat) 3 High Short Circuit SOA Capability Symbol Test Conditions VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 IC100 ICM T C = 25°C

rca 2n3055

Abstract: rca 40327 RCA 2N3055 transistor 2n3055 audio amplifier application note 2n3055 application note RCA 40636 transistor 40327 rca 2N3439 RCA 2N3055 transistor RCA 528
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y t o 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]

u357

Abstract: t3d 56 t3d 68 t3d 5_6 LS 2027
Contextual Info: CSR23 MIL-C-39003/03 • MallorY Solid Tantalum Capacitors GENERAL SPECIFICATIONS Extended Capacitance G raded Failure Rates DC Leakage: A t+ 2 5 °C - See Table Lim it A t+ 8 5 °C - 10 x Table Lim it A t+ 1 2 5 °C - 12.5 x Table Limit C apacitance C hange M aximum :

to220aa

Abstract: TO-220AA 2N5301 2N5302 2N5303 2N5496 2N5885 2N5886 2N6129 2N6326
Contextual Info: THO nSO N/ D I S T R I BU TO R ^oabfl?3 0G0s?n m o SÔE D TCSK Bipolar Power Transistors General Purpose Continued v C E (s a t) " v hFE T y p e N o. v CEO<a u s > V V C E V (s u s ) V 40 60 60 60 80 80 80 - - - - 2 N 5 4 9 6 P LA S T IC FA M ILY ( n - p - n )

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6

LS 2822 M

Abstract: M39014 1- 1553 104k avx 1301 LS 2027 m39014 2-1350 0501 1237 01 4011 ABB 0698 2842 2843 3842 3843 3844 0429 01 2701 00 M390 1553
Contextual Info: MIL-PRF-39014/Radial Leads W L.D. T L.S. Figure 1 L W W W 1.250 Min. L.D. L.D. 1.250 Min. L.D. L.S. Figure 2 L.S. L T L T L L.S. Figure 3 Figure 4 HOW TO ORDER Military Type Designation: Styles CKR04, CKR05, CKR06, CKR08 Dash Number Option: MIL-PRF-39014/01 Appropriate Dash Number

M39014 5-2291

Abstract: LS 2027 MIL-PRF-39014 R K J 0822 3500 2231 M390 1549 LS 2822 p 01 k 2645 3570 1210 3570 1301
Contextual Info: MIL-PRF-39014/Radial Leads W L.D. T L.S. Figure 1 L W W W L.D. 1.250 Min. L.D. 1.250 Min. L.D. L.S. Figure 2 L.S. L T L T L L.S. Figure 3 Figure 4 HOW TO ORDER Military Type Designation: Styles CKR04, CKR05, CKR06, CKR08 Dash Number Option: MIL-PRF-39014/01 Appropriate Dash Number