T 2.5A 250V Search Results

IRFU421

Contextual Info: IRFR420, IRFR421, IRFR422, IRFU420, IRFU421, IRFU422 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate

IRF822

Abstract: IRF820 IRF821 IRF823 TB334 IRF823 harris
Contextual Info: IRF820, IRF821, IRF822, IRF823 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRF420, IRF421, IRF422, IRF423 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF822

Abstract: irf820
Contextual Info: IRF820, IRF821, IRF822, IRF823 HARRIS S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2 A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

F421

Abstract: IRF423
Contextual Info: iH A R R is IRF420, IRF421, IFJF422 IF^F423 s e m i c o n d u c t o r 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2 A and 2.5A, 450V and 500V • Majority Carrier Device These are N-Channel enhancement mode silicon gate

800V PNP

Abstract: pnp 1500v 8a BUX88 BU508AF PHILIPS SEMICONDUCTOR pnp 1200V 2A high voltage pnp transistor 700v pnp transistor 800v BU508DF BU603 PNP 300V
Contextual Info: N AMER PHILIPS/DISCRETE 44 2SE T> m ^>[=53=131 ÛQlbES2 T • T-33-Í?/ Power Devices VERY HIGH VOLTAGE TRANSISTORS in order of current rating TYPE NO. PACKAGE OUTLINE ,C(DC)0) VCES BU505 TO-220AB 2.5A BU506 TO-220AB 3A BU506D TO-220AB 3A SOT-93A 3A BU706

Contextual Info: 3.3 Dia. 1 6.5 9.5 WT VI X T T4.0 '- 1.5x2.3L 2.5 - 11. □ i— 1 .1 PCB LAYOUT CUT-OUT Revision Rev. Description Date Approved £ k2 Dia. Material: H ousing: T h e rm o p la stic T erm inal: C opper Alloy C h a ra c te ris tic s : R ating: 2.5A 250V AC

Contextual Info: 254G3 CONNECTOR SYSTEM .10” 2.54mm pitch wire(board)-to-board 254G3-(1,2)H SERIES HOUSING MATERIAL : PBT+30% GF UL 94V-0 ACCPT 254G3-T TERMINAL MATE WITH 254G3 SERIES PIN HEADER CURRENT RATING : 2.5A AC,DC VOLTAGE RATING : 250V AC,DC CONTACT RESISTANCE : 30mŸ MAX

Contextual Info: N A PIER PHILIPS/DISCRETE 2SE D • fabS3131 0Qlb222 T ■ T-33-*?/ Power Devices VERY HIGH VOLTAGE TRANSISTORS in order of current rating T Y P E NO. PACKAGE O U T L IN E lc(DC)CI) VCES . V CEO V CE(sat) MAX. at lc BU 505 T O -220AB 2.5A 1500V 700V 5 V a t2 A

diode 400V 4A

Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
Contextual Info: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A

Contextual Info: RK Crimp Terminal * Material : Brass or Phosphor bronze * Current rating : 2.5A, AC/DC * Voltage rating : 250V, AC/DC * Applicable wire AWG #26- #22 B .075 1.90 .063 1.60 A A B .079 2.00 .091 2.30 .024 0.60 .079 2.00 .118 3.00 .051 1.30 B-B .138 3.50 RK-T-22

MCG15R

Abstract: MCG03R 4572 8pin
Contextual Info: , I I File N o.I A I IS H E E T 030 1 /1 SPECIFICATIONS Current Rating: 2.5A AC,DC Material: PBT UL 94V-0,Black Voltage Rating: 250V AC,DC Temperature Range: — 25’C ~ + 8 5 ‘C Insulation Resistance: 1000 Megohms Min. Withstand Voltage: 800V AC/Minute

PJ-102B

Abstract: Jack 0.8 center pin pj 899
Contextual Info: -14.5 [0.571] 13.7 [0.539]- 3.5 [0.138] — TERMINAL 10.7 [0.421]— • NUMBER' 7.7 [0.303] 3 QO o <T> r- S \ 0.8 [0.031]- 10.7 [0.421] -I P C B LAYOUT TOP VIEW SPECIFICATIONS: RATING: 16V DC 0 2.5A CONTACT RESISTANCE: 30m OHMS MAX INSULATION RESISTANCE:

TL 1838

Abstract: Neutron sensitive PIN diode
Contextual Info: H A R R IS S E M I C O N D U C T O R FRX234D, FRX234R FRj 234H Radiation Hardened N-Channel Power MOSFETs June 1994 Package Features • 2.5A, 250V, RDS(on) = 0.7000 LCC 18 PIN • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma

C459

Abstract: TDC459 c-459 TS-20-10-C459
Contextual Info: HIGH BREAKING CAPACITY, CERAMIC CARTRIDGE, TIME LAG New Document Number TS-20-10-C459 T SILVERED CAPS TDC459 I Sheet 1 of 1 SPECIF CATION ALL DIMENSION IN MILLIMETRES + Rated Current Maximum mV drop @ In 1A 1.25A 1.6A 2A 2.5A 3.15A 4A 5A 6.3A 8A 10A 350 300

Contextual Info: C2528 Series 2.50m m p i t c h wire to b o a r d c o n n e c t o r gp^ 15.3 REF. A s s e m b l y L ay o u t Specifications: P oles 2 ~ 25 Poles P it c h b e tw e e n poles 2.50m m R a te d Voltage 250V AC,DC R a te d C u rre n t 2.5A (AWG # 2 2 W ithstand Voltage

T10H 250V

Abstract: 2N5877 equivalent tektronix 475 2N6406 2N6408 2N5877 npn 10a 800v 2N5875 BUX82 IN4933
Contextual Info: BUX82 POWER TRANSISTORS 6A, 800V, Fast Switching, Silicon NPN Mesa FEATURES DESCRIPTION • Collector-Base Voltage: up to 800V • Peak Collector Current: 10A • On Time: < 500nS @ 2.5A These high voltage glass passivated power tra n sisto rs c o m b in e fa s t sw itching, low

FET IRF 540

Abstract: diode lt 823
Contextual Info: • ^DES?! 0DS40b3 HARRIS 741 ■ has IRF820/821/822/823 IRF82OR/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Featu res P ack ag e T O -2 2 0 A B • 2.2 and 2.5A, 450V - 500V T O P VIEW • rDS °n = 3-oii and 4.0il • Single Pulse Avalanche Energy Rated*

pj 899

Abstract: 003A PJ-003A DC Power Jack
Contextual Info: MODEL ND. PJ- 003A c SCHEMATIC 3-01 r- o3 / v J - o2 CENTER PIN DIAMETER 2.0MM DIA. PC FILE NAME; PJ-Q03A.DWG [c o p y r ig h t 1997 BY CUI INC PCB LAYOUT TOP VIEW SPECIFICATIONS: RATING: 16V DC @ 2.5A CONTACT RESISTANCE: 30m OHMS MAX INSULATION RESISTANCE:

IEC 60320 C5

Abstract: lter N17352
Contextual Info: LIVE BROWN LIVE(BROWN) NEUTRAL(BLUE) NEUTRAL(BLUE) VLX VAC5S XXX 2.5A 250V- N17352 IEC 60320 C-5 M A R K T N fi fflü TA TT.S l V D LE X R E S E R V E S THE RIGHT TO A LTER NDN-CRITICAL DIMENSIONS WITHDUT NOTICE. PLUG TYPE: AS/NZS 3112 WITH INSULATED BLADES

1rf830

Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Contextual Info: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*

Contextual Info: 1 I I IBI 6 I I I File No. I 4 0 5 I SHEET 1 /1 Features : . Available in 2—12 circuits . UL94V-0, Nylon 66 . 250V AC/DC, 2.5A 1.60—H 1.00 H o o a: o in V 3.70 |— O 1*0 2.10— 2 .9 0 - 1 JI— f— CO o /////a //////////////T z \ / y/A - 4 .6 0 - I—0.80

JRF820

Abstract: F820R
Contextual Info: 2 3 H A R R IS IR F 820/ 821/ 822/823 IR F 820 R /8 2 1R /822 R /823 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features Package T O -2 2 0 A B TOP VIEW • 2 .2 and 2.5A , 4 5 0 V - 5 0 0 V • rD S ° n = 3.on and 4 .0 ÎÎ DRAIN

Contextual Info: IIC Connectors Ib IBULGIN EN60 320-1 Standard Sheet C8 Class II Cold Condition Flange Panel Mount Inlet 15.5 Figure of Eight 2.8m m Solder Tabs Connectors 2.5A, 250V a.c. Snap Fit to Panel Inlet Figure of Eight 15.5 Fits Panel sizes 1, 1.5 or 2mm 21.3 23.70