FABS3131 Search Results

DIODE FAST S2L

Abstract: DIODE s2l M3308 M3306 BYR28 DIODE s2l 37
Contextual Info: I I N AflER P H IL IP S / D IS C R E T E 2SE D fabS3131 □G 2241S DEVELOPMENT DATA 7 B i BYR28 SERIES T h is d a ta sheet co n ta in s advance in fo rm a tio n and sp e c ific a tio n s are su b je ct to change w it h o u t n o tic e . T - Ö 3 ~ iy ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES

Contextual Info: N A PIER PHILIPS/DISCRETE 2SE D • fabS3131 0Qlb222 T ■ T-33-*?/ Power Devices VERY HIGH VOLTAGE TRANSISTORS in order of current rating T Y P E NO. PACKAGE O U T L IN E lc(DC)CI) VCES . V CEO V CE(sat) MAX. at lc BU 505 T O -220AB 2.5A 1500V 700V 5 V a t2 A

buz350

Contextual Info: U AUER PHILIPS/DISCRETE PowerMOS transistor OLE D • fabS3131 0014753 7 ■ BU Z350 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK427-450B

Contextual Info: N AMER P H I L I P S / D I S C R E T E ESE D • fabS3131 0 0 2 0 2 7 0 PowerMOS transistor ô ■ BUK427-450B -r-3 9 -ti GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

BUK427-450B

Contextual Info: N A M ER PHILIPS/DISCRETE ESE D • fabS3131 0020270 PowerMOS transistor ô ■ BUK427-450B -r-39-ti GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in

PHSD51

Abstract: DIODE SD51 IEC134 M0046 diode t03
Contextual Info: N AMER PHILIPS/DISCRETE ^ TOD 0800160 90D D AMPEREX, 10652 • fabS3131 OOlQbSS S SLATERSVILLE T '0 3 PHSD51 D SC H O T T K Y — BARRIER RECTIFIER DIODE High-efficiency rectifier diode in a D O — 5 metal envelope, featuring lo w forw ard voltage drop, low

M2808

Abstract: BYV32F BYV32F-50 diodes b
Contextual Info: SSE D N AHER PHI LIPS/DISCRETE • bhS3T31 QDS5Sb3 □ ■ BYV32F SERIES jr ; 0 3 -/7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficien cy e p itax ial do ub le rec tifie r diodes in S O T -1 8 6 fu ll-p a c k plastic

Contextual Info: 2N4856 to 4861 J V_ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching, applications in industrial service.

GTO philips

Abstract: lg diode 923 Philips gto M1475 IEC134 gto 5A M2739 gate turn-off diode 935 lg lg diode 932
Contextual Info: DEVELOPMENT DATA T his data sheet contains advance information and are subiect to change w ithout notice. N AMER PH ILI P S/ DI S CR ET E BTV160DV SERIES GbE D 1^53^31 DDinOS FAST GATE TURN-OFF THYRISTORS WITH ANTI-PARALLEL DIODE S T -0 S T -/7 Fast gate tu rn -o ff thyristors w ith anti-parallel connected fast soft-recovery diodes in ISOTOP. They

9415

Abstract: P2307
Contextual Info: O S B 9 4 1 5 SERIES O S M 9 4 1 5 SERIES , O S S 9415 SERIES bb53131 ODESTGS 2 B - MAINTENANCE TYPE N AMER P H I L I P S / D I S C R E T E SSE D I HIGH-VOLTAGE RECTIFIER STACKS il^ o sra J^ The S K i 5 S do ub ler circuits. S ,r 7 ^ 2 3 - 0 7 aVa'anChe d i° deS m ° U nted ° "