T 168 Search Results
T 168 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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T168 |
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Shortform Data Book 1977/78 | Short Form | 22.43KB | 1 |
T 168 Price and Stock
WeEn Semiconductor Co Ltd BT168GW,115SCR 600V 1A SC73 |
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BT168GW,115 | Digi-Reel | 5,926 | 1 |
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BT168GW,115 | Reel | 12 Weeks | 10,000 |
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BT168GW,115 | 12 Weeks | 10,000 |
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BT168GW,115 | 4,000 | 13 Weeks | 1,000 |
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BT168GW,115 | 13 Weeks | 1,000 |
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BT168GW,115 | 13,000 | 1 |
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TDK Electronics B82422T1681J000FIXED IND 680NH 450MA 340MOHM SM |
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B82422T1681J000 | Digi-Reel | 5,126 | 1 |
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TAIYO YUDEN MAAST168SB7105KTCA01CAP CER 1UF 25V X7R 0603 |
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MAAST168SB7105KTCA01 | Digi-Reel | 4,559 | 1 |
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MAAST168SB7105KTCA01 | 4,000 |
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TAIYO YUDEN MCAST168BB5225MTNA01CAP CER 2.2UF 25V X5R 0603 |
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MCAST168BB5225MTNA01 | Cut Tape | 4,000 | 1 |
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TAIYO YUDEN MCJCT168CB7105KRPA01CAP CER 1UF 25V X7R 0603 |
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MCJCT168CB7105KRPA01 | Cut Tape | 2,808 | 1 |
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T 168 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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STK6966
Abstract: aatj
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OCR Scan |
STK6966 STK6966 aatj | |
TFK 404
Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
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OCR Scan |
20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 | |
Contextual Info: TOSHIBA { D I S C R E T E / O P T 0> 9097250 ¿Toshiba T O S H IB A ^ D IS C R E T E / O P T O 99D d ËT| 16894 T □ T 7 E S □ ODlbfiTM 1 | ~ D T -S S -l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 8 3 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA |
OCR Scan |
500nA 250uA 00A/us | |
Contextual Info: dF TOSHIBA { D I SC RE TE /OPT O} 9097250 TOSHIBA DISCRETE/OPTO ^ /o ò h ìltt § T D T 7ES0 DülbflTD D TS^-ìj 99D 16870 T O SH IBA SEMICONDUCTOR F IE L D EFFEC T TR A N SISTO R Y T F 6 3 1 S IL IC O N TECHNICAL DATA N C H A N N EL.MOS T Y P E (T T -M O S I) |
OCR Scan |
500nA 250uA 00A/us | |
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TO SHIBA D I S C R E T E /OPTO TO SH IBA SEMICONDUCTOR TT DE § T D T O S O OOlbflfc.5 □ 99D 16862 F IE L D EFFEC T D” F 3 R-|/ TRA N SISTO R Y T F 6 2 1 S IL IC O N TECHNICAL DATA N CHANNEL MOS T Y P E (T T -M O S E ) |
OCR Scan |
500nA 250uA 00A/us | |
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 ¿Tasìuha T O S H IB A “ñ D F l T D T V a S O 0Dlhfl30 fl 99D D IS C R E T E / O P T O 16830 D T ^ -l TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 2 1 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSI) INDUSTRIAL APPLICATIONS |
OCR Scan |
0Dlhfl30 103HAX. 500nA 250uA 00A/us | |
VDS-10VtContextual Info: TOSHIBA O I S C R E T E / O P T O } Tì ¡>I~| 10*17550 OOltñSt, b 1~~ 99D 16826 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR T O S H IB A F IE L D EFFEC T DT"BS'l3 TR A N SIST O R Y T F 4 5 3 S IL IC O N TECHNICAL DATA N CHANNEL HOS T Y P E ( 7 T -M O S 1 I ) |
OCR Scan |
08SOMAX. 250uA 100nA 250uA 00A/ys VDS-10Vt | |
Contextual Info: TOSHIBA {DISCRETE/OPTO} TÎ 9097250 TOSHIBA DISCRETE/OPTO DE | T m 7 2 S D 99D 16896 T O S H IB A SEMICONDUCTOR F IE L D EFFEC T D ~p- 3 e)-1 T R A N S IS T O R Y T F 8 3 2 S IL IC O N TECHNICAL DATA N C H A N N EL MOS T Y P E (Æ -M O S IE ) INDUSTRIAL APPLICATIONS |
OCR Scan |
250uA 00A/gs | |
Contextual Info: T O S H I B A -CDISCRETE/OPTOJ- 9097250 T O S H IB A ¿^oHuhn TÏ D IS C R E T E / O P T O »FI^DTVESD 99D 16892 DDlhñTa D T 3 S -II TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 8 3 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSE) INDUSTRIAL APPLICATIONS |
OCR Scan |
t50ChA 250uA 250uA 00A/us | |
2SC4282
Abstract: 2SC1833 2sc372 TIL 729 2sc1707 2SC1548 2SC4641 2SC2999 2SC2550 2SC1628
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OCR Scan |
2SC4641 2SC945 2SC33Ã 2SC2320 2SC1740 ZSC2999 2SC1675 2SC1342 2SC1S81 2SC2058 2SC4282 2SC1833 2sc372 TIL 729 2sc1707 2SC1548 2SC2999 2SC2550 2SC1628 | |
16803dContextual Info: TOSHIBA -CDISCRETE/OPTOl Ti 99D 9097250 TOSHIBA <DIS C R E T E/ OP TO T O SH IB A SEMICONDUCTOR &àìhn De I^GTVESG F IE L D 16802 DGlbflDE 3 DT-S^-IB E F F E C T T R A N SIST O R Y T F 2 4 3 S IL IC O N TECHNICAL DATA N CHANNEL MOS TY PE T T -M O S I) |
OCR Scan |
250tiA tf15ns 00A/us 16803d | |
Contextual Info: TOSHIBA {DI SC RE TE /OPT O} 9 0 9 7 2 5 0 T O S H IB A t » , / D eT 10^7550 D D l h ñ ñ 4 99D 168 84 (D IS C R E T E / O P T O SEMICONDUCTOR TOSHIBA D FI E L D E F F E C T T R A N S I S T O R Y T F 8 2 0 TECHNICAL DATA S I L I C O N N C H A N N E L MOS T YPE |
OCR Scan |
100nA 250uA 500ss 00A/us | |
Contextual Info: TOSHIBA {DISCRETE/OPTO} T í D e I^G^SSO 9097250 TOSHIBA <DIS C R E T E / O P T O 99D 16844 T - 2 ? -/3 DDlbfl44 ñ J ~ D TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SE) INDUSTRIAL APPLICATIONS |
OCR Scan |
DDlbfl44 500nA 250uA 250uA 00A/us | |
Vds500V
Abstract: L75S
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OCR Scan |
100nA 250uA 00A/us Vds500V L75S | |
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160V 30A TRANSISTOR
Abstract: power transistor 200V, 30A
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OCR Scan |
D01bflD4 250uA 250uA 00A/us 160V 30A TRANSISTOR power transistor 200V, 30A | |
Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } 9097250 T O S H IB A D IS C R E T E /O P T O 99D 16880 D - T S C f- tf TOSHIBA FIELD EFFECT TRA N S I S T O R ¿foïhiba SEMICONDUCTOR Y T F 6 4 2 SIL I C O N N CHANNEL MOS TYP E TECHNICAL DATA (71 -MOS I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. |
OCR Scan |
100nA 250uA 250uA | |
2SC1681
Abstract: 2SC1681 npn 2SC1681BL 2SC168 transistor 2sc1681 2SC1681V 2sC 691 BH RV transistor 251C Produced by Perfect Crystal Device Technology
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OCR Scan |
I0-100jtiA I0-100itA 31StfWt 2SC1681 2SC1681 npn 2SC1681BL 2SC168 transistor 2sc1681 2SC1681V 2sC 691 BH RV transistor 251C Produced by Perfect Crystal Device Technology | |
ip13aContextual Info: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR ¿ToÀhìhn D e J t O T 7SSD D D l b ö E S T 99D TOSHIBA FIELD 16822 t r P S ^ - lZ ) EFFECT TRANSISTOR Y T F 4 5 1 SILICON TECHNICAL DATA N CHA N NE L MOS TYPE 7T-M0S I ) HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. |
OCR Scan |
100nA 250uA 250uA ip13a | |
zo125
Abstract: z0127 AVH32 zo125 ma VH32 FPD87310 YO125 z0125 LH168M ZO128
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OCR Scan |
LH168M LH168M 384-output XO1-zo128 zo125 z0127 AVH32 zo125 ma VH32 FPD87310 YO125 z0125 ZO128 | |
TOSHIBA 1N DIODEContextual Info: TOSHIBA {DI SC RE TE/ OPTO } "H 9097250 TOSHIBA DISCRETE/OPTO ¿ / o ìh ìh tt DE I T Q T T S S O QOlbñQO O I~~ 99D 16800 TOSHIBA F IE L D SEMICONDUCTOR DT-39-13 E FFE C T TRANSISTOR Ï T F - 2 4 2 SIL IC O N TECHNICAL DATA N CHANNEL MOS-TYPE ( Tl-MOS |
OCR Scan |
DT-39-13 100nA 250uA 00A/us TOSHIBA 1N DIODE | |
Contextual Info: FAST CMOS 20-BIT BUF F E RS IDT54/74FCT1 6827AT/BT/CT/ET IDT54/74FCT162827AT/BT/CT/ET FEATURES: DESCRIPTION: • C o m m o n features: The F C T 16827A T/BT/C T/ET and F C T 162827AT/B T/C T/ ET 20-bit butters are built using advanced dual metal CMOS technology. These 20-bit bus drivers provide high-performance bus interface buffering for wide data/address paths or |
OCR Scan |
20-BIT IDT54/74FCT1 6827AT/BT/CT/ET IDT54/74FCT162827AT/BT/CT/ET 6827A 162827AT/B 10-bit | |
Contextual Info: TOSHIBA O I S C R E T E / O P T O } Ti 99D 16816 9097250 TOSHIBA DISCRETE/OPTO> /Toihibti Ï eT I T D T 7 2 5 D GGlbfllh DT-^-lâ TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 4 4 2 SILICON N CHANNEL HOS TYPE TECHNICAL DATA (J2VM0SI HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. |
OCR Scan |
-100nA 250ViA 250iJA 00A/ys | |
amphenol 74868 ug
Abstract: UG-176 74868 UG176
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OCR Scan |
08-Feb-00 08-Feb-00 176/U \UHF\83-168 amphenol 74868 ug UG-176 74868 UG176 | |
T-ConnectorContextual Info: Module no:1685097 LabelId:1685097 Operator:Phoenix 16:09:00, Donnerstag, 28. Juni 2001 RC-T./2BU1ST Z T-connector M 23 Nominal voltage [V] Nominal current [A] T-connector M 23, 19-position 150 8 / 10 T-connector M 23, 12-position 300 8 Description Phoenix Contact Elektronischer Katalog |
Original |
19-position 12-position 12/2BU1ST T-Connector |