250TIA Search Results

76443p

Contextual Info: intefsil HUF76443P3, HUF76443S3S D ata S h e e t O c to b e r 1999 F ile N u m b e r 4784 75A, 60V, 0.0095 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE • Ultra Low On-Resistance DRAIN ' rDS ON = 0.008£2, V q s = 10 V

Contextual Info: SSH9N90A Advanced Power MOSFET FEATURES ^^DSS = 900 V • Avalanche Rugged Technology ^DS on = 1.4 Q Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25jxA (Max.) @ VDS = 900V

1rf830

Abstract: LG diode 831 IRF830.831 IRFS32 IRFS30
Contextual Info: MICRO ELECTRONICS CORP ITE D • I bGTlîflû OOOOTTO 2 £77 'm i Æ XÿSlf}- ¡ Il T -2 V U 1RF830 1RF831 IRF832 IRF833 \j; ggg p « * ik i m V ÎI HIGH POWER MOSFETs P*itNuirb«r VDS APPLICATIONS I ’ PR E L IM IN A R Y • SWITCHING REGULATORS • MOTOR DRIVERS

smd diode marking 47s

Abstract: S41 rectifier smd marking 47s smd code marking sot23 Micro6 Package smd diode marking JJ sot23 G0A marking SMD MOSFET N Z4 lm 5532
Contextual Info: PD 9.1414A International IO R Rectifier IR L M S 6702 PRELIMINARY H EXFET Pow er M O S F E T • Generation V Technology • Micro6 Package Style • Ultra Low Rds on • P-Channel MOSFET V q ss = -2 0 V R DS(on) = 0 . 2 0 Q Description Fifth Generation HEXFETs from International Rectifier

TIC 106 PSPICE

Abstract: FP23N06L tic 263a FP23N06
Contextual Info: RFP23N06LE, RF1S23N06LE, RF1S23N06LESM HARRIS S E M I C O N D U C T O R 23A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D E C T O -220A B • 23 A ,60V • rDS ON = 0.065i2

16803d

Contextual Info: TOSHIBA -CDISCRETE/OPTOl Ti 99D 9097250 TOSHIBA <DIS C R E T E/ OP TO T O SH IB A SEMICONDUCTOR &àìhn De I^GTVESG F IE L D 16802 DGlbflDE 3 DT-S^-IB E F F E C T T R A N SIST O R Y T F 2 4 3 S IL IC O N TECHNICAL DATA N CHANNEL MOS TY PE T T -M O S I)

transistor 79t

Contextual Info: APR 2 4 1992 19- 4739; R ev 0; 2/92 /l/l/JXI/l/l 1.2[iA Max, Single/Dual, Single-Supply Op Amps _Features The MAX406/MAX407 are low-voltage, m icropower, pre­ cision op am ps designed for battery-operated systems. They feature a 1|iA per am plifier quiescent current that is

IRFP250

Abstract: irfp250 DRIVER irfp250 mosfet T-39-15 irfp250 applications pulse transformer IRFP253 irfp250 applications IRFP250 international rectifier IRFP251 IRFP252
Contextual Info: HE D I 4flS5MSa 0000750 2 | Data Sheet No. PD-9.443B INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFP250 IRFP251 I N-CHANNEL IRFP252 IRFP253 Product Summary 200 Volt, 0.085 Ohm HEXFET TO-247AC TO-3P Plastic Package

Contextual Info: O M 1N 100S A O M 5N 100S A O M 1N 100S T OM3N1QOSA OM6N1QOSA OM3N1QOST POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE 1000V, Up To 6 Amp, N-Channel MOSFET In Hermetic Metal Package FEATURES • • Isolated Hermetic Metal Package Fast Switching • • •

irf7416

Contextual Info: PD - 9.1356D International IG R Rectifier IRF7416 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance P-Channel Mosfet Surface Mount Available in Tape and Reel Dynamic dv/dt Rating Fast Switching V d ss = -30 V

Contextual Info: OMDIOO OMD400 OMD2QO OMD500 FOUR N-CHANNEL MOSFETS IN HERMETIC POWER PACKAGE 100V T h r u 500V. Up To 25 A m p . N - C h a n n e l M O S F E T In H e r m e t i c Metal P a c k a g e FEATURES • • • • Isolated Hermetic Metal Package Fast Switching LowRDS on

MOSFET 55N03

Contextual Info: TAIW AN s TSM55N03 SEMICONDUCTOR 25V N-Channel MOSFET bl RoHS CO M PLIANCE TO-252 PRODUCT SUM M ARY Pin D efinition; 1. Gate 2. Drain 3. Source & V DS V R os^m O ) Id (A) 6 @ V cs = 1 û V 30 9 @ V<;s z 4.5V 30 25 1 2 3 Features Block Diagram ♦ A dvance Trench Proce s s T ech n o logy

Contextual Info: PD 9.1418 International [^Rectifier IRGMH40F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz

tc514280

Abstract: TC514260BJLL TC514170 TC514260BJL TC514440 TC514260BJ
Contextual Info: X6 Capacity Type No. Max. Access Time n$ Min. Cyd Power Organization Tim$(ns) Supply (V) TC514400ASJUAZL/AFTUATRL-60 60 20 30 110 TC514400ASJUAZL7AFTUATRL-70 70 20 35 130 TC514400ASJL/AZL/AFTL/ATRL-80 80 20 40 150 80 20 40 150 80 20 40 50 13 25 TC51V4400ASJ/AFT-80

Contextual Info: SSW/I4N90A A d van ced Power MOSFET FEATURES ^^D S S “ • Avalanche Rugged Technology 900 V ^DS on = 5 .0 a ■ Rugged Gate Oxide Technology ■ ■ ■ ■ Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25fiA (Max.) @ VDS = 900V

Contextual Info: ERFS644A Advanced Power MOSFET FEATURES BVdss = 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VM = 250V

Contextual Info: $ M PIC16C71 ic r o c h ip 8-Bit CMOS EPROM Microcontroller with A/D Converter FEATURES FIGURE A - PIN CONFIGURATION High-Performance RISC-like CPU PDIP, SOIC, CERDIP Window • Only 35 single word instructions to learn • All single cycle instructions 250ns except for

IRFR9220

Abstract: irfu9220 irfu9222 sis 968 dc-dc 522B DNMC IRFR9222 OL-10S 46HA .46HA
Contextual Info: HE D | 4BS5452 0005340 □ | Data Sheet No. PD-9.522B INTERNATIONAL RECTIFIER T-37-25 INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dvAdt RATED HEXFET TRANSISTORS IRFR9SSO IRFR92S2 IRFU9SSO IRFU0222 P-CHANNEL Product Summary -200 Volt, 1.5 Ohm HEXFET

DM-300 R

Abstract: DE-275
Contextual Info: YT re C t z j T e n e r g y ^ i tic "r? DÊfl 2 0 4 ^ 5 DDODOai D i~.I — . DE-275 SERIES □ DATA SHEET_ DIRECTED ENERGY. INC. TE MS POISED POW ER COM PONENTS AND SYSTEMS 4 DE-27510IN40 SPECIFICATIONS I The Centre for Advanced Technology

pj 86 diode

Abstract: pj 54 diode 60v 10a p type mosfet diode 4j T02202 RS DT 27 DIODE PJ 63 diode RS-242
Contextual Info: IRFZ14A A d va n ce d Power MOSFET FEATURES BVDss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175* «Operating Temperature