SYM039 Search Results

philips Electrolytic Capacitor

Abstract: blf4g20-110b ACPR400 ACPR600 BLF4G20S-110B RF35 Philips Electrolytic
Contextual Info: BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

Contextual Info: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:

Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

SMD 0508

Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
Contextual Info: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:

Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 2 — 15 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

smd JH transistor

Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

250 B 340 smd Transistor

Abstract: smd JH transistor BLA0912-250 T491D476M020AS
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

m 110b1

Abstract: ACPR400 ACPR600 BLF4G20LS-110B RF35 PHILIPS GSM I Q
Contextual Info: BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance

T491D226M020AS

Abstract: T491D476M020AS smd JH transistor
Contextual Info: BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

NV SMD TRANSISTOR

Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

Contextual Info: BLA1011-200R; BLA1011S-200R Avionics LDMOS transistors Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1.

Contextual Info: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the

ACPR600

Abstract: BLF4G10LS-120 ACPR400 BLF4G10-120 philips electrolytic capacitor
Contextual Info: BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance

BLF4G22-100

Abstract: BLF4G22S-100 RF35
Contextual Info: BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance

enamelled copper wire tables

Abstract: SMD 0508 SMD0508
Contextual Info: BLA1011-200R; BLA1011S-200R Avionics LDMOS transistors Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1.