SWTC Search Results

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for

D1669

Abstract: 2SB1136 2SD16 AOOS
Contextual Info: O rd e rin g n u m b e r: EN2092B 2SB1136/2SD1669 No.2092B PNP/NPN Epitaxial Planar Silicon Transistors 50V/12A Swtching Applications A pplications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

300V transistor npn 2a

Abstract: BUV48A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUV48A DESCRIPTION •High Voltage Capability ·High Current Capability ·Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications such

TPCP8F01

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications ○ Multi-chip discrete device; built-in PNP Transistor for main switch and N-ch MOS FET for drive

c5886

Abstract: transistor c5886 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

C5886

Abstract: transistor c5886 c5886 transistor
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

3SM diode

Abstract: MARKING fzt 605
Contextual Info: ¿ = 7 SGS'THOMSON ^ 7#. P L Q 08 PLQ1 HD glS llLi(gTO@liQ@i FAST RECOVERY RECTIFIER DIODES • VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION ■ SWTCHING POWER TRANSISTORS DRIVER C IRC UITS (S E R IE S DIODES IN ANTISATURATION CLAMP SPEED UP DIODE

Contextual Info: B U fe 1C w so isíf^ fetic, %, m. a &¿:\ A c i m a s ^ x í r - h ís im m g fc j ^ ~ - o t¿ ^ - < o u - L .v > o b - a - c M ^ y ^ m m - m ^ - m ^ T ^ o m ^ r c o ïX t ^ ( D ^ o m iu y ^ - y ,m - < x j ^ffS ^W ^LE D rLUM!SWTCH J0 rCITILED®J, LED

transistor A2097

Abstract: 2SA2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

c5886

Abstract: 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

200G

Abstract: 25AMP
Contextual Info: REED RELAYSsrnrEszo SERTES20 REI-AYSAREAVAILABLEIN 1A, 2A,1C,2C STANDARD DRYREEDS.THEYARECONSTRUCTEDUSINGA BOBBINOF SPECIAL DESIGNMEETINGULg4VO. HIGHQUALITYRHODIUII'I SWTCHES ARE USEDINALL IF REQUIRED TO MEETSPECIFICWELL DEFINED APPLICATIONS. USRELAYSSYSTEMS,PROCEDURESAND CONTROLS MEET

SSD2008

Abstract: SSD2008A
Contextual Info: SSD2008A !"#$ !"#$%&'!! *#+,(-*.+/0(1 FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS(ON) S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 ■ Low Input Capacitance ■ Extended Safe Operating Area D1 D1 Top View S2 ■ Improved High Temperature Reliability

FLUORESCENT ballast 12v

Abstract: BALLAST 12V
Contextual Info: KA7521 BALLAST CONTROLLER ELECTRONIC BALLAST CONTROLLER The KA7521 is a electronic ballast controller for fluorescent inver­ ter system, it contains soft start, no lamp protection and over tem­ perature protection. With the zero voltage swtching, it can also

2sa2097

Abstract: transistor A2097 A2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications • • • Unit: mm High DC current gain: h FE = 200 to 500 I C = −0.5 A Low collector-emitter saturation: V CE (sat) = −0.27 V (max)

RECTIFIER DIODES SGS

Contextual Info: PLQ 08 PLQ 1 FAST RECOVERY RECTIFIER DIODES VERY FAST FORWARD AND REVERSE RECOVERY DIODES SUITABLE APPLICATION SWTCHING POWER TRANSISTORS DRIVER CI R CU I T S SERI E S DI O D ES IN ANTISATURATION CLAMP SPEED UP DIODE IN DISCRETE DARLINGTON. THYRISTORS GATE DRIVER CIRCUITS

C5886

Abstract: 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.)

transistor c5886

Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

2SA2097

Abstract: transistor pnp a110
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor A2097

Abstract: A2097 2SA2097 2SA20 transistor 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

transistor c5886

Abstract: c5886 c5886 transistor 2SC5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •

Contextual Info: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC n Lower RDS ON n Improved Inductive Ruggedness n Fast Swtching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View n Low Input Capacitance n Extended Safe Operating Area D1 D1 n Improved High Temperature Reliability

1650 p2

Abstract: OPLINK Communications
Contextual Info: Single Window Single Mode Wideband Tree/Star Coupler nxm SWTC Series SINGLE WINDOW, SINGLE MODE WIDEBAND TREE/STAR COUPLER Features • Best Uniformity • Ultra Low Insertion Loss • High Directivity • Highly Stable & Reliable Applications • Telecommunications

transistor A2097

Abstract: A2097 2SA2097
Contextual Info: 2SA2097 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2097 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 IC = −0.5 A • Low collector-emitter saturation: VCE (sat) = −0.27 V (max)

c5886

Abstract: 2SC5886 transistor c5886
Contextual Info: 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 400 to 1000 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) •