SURFACE MOUNT TRANSISTOR A61 Search Results

Contextual Info: Cascadable Amplifier 5 to 600 MHz A611/ SMA611 V2 Features Product Image • LOW NOISE FIGURE: 3.2 dB TYP. • HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc • HIGH OUTPUT POWER: +12.5 dBm (TYP.) Description The A611 RF amplifier is a discrete thin film hybrid design,

SMA611

Abstract: A611 CA611
Contextual Info: A611 / SMA611 Cascadable Amplifier 5 to 700 MHz Rev. V2 Features Product Image • LOW NOISE FIGURE: 3.2 dB TYP. • HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc • HIGH OUTPUT POWER: +12.5 dBm (TYP.) Description The A611 RF amplifier is a discrete thin film hybrid design,

surface mount transistor A61

Abstract: CA61-1
Contextual Info: Cascadable Amplifier 2 to 6 GHz A61-1/ SMA61-1 V3 Features • • • • Product Image AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Description The A61-1 RF amplifier is a discrete hybrid design, which uses

Contextual Info: Cascadable Amplifier 2 to 6 GHz A61/ SMA61 V3 Features Product Image • WIDE BANDWIDTH: 2-6 GHz • MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. • LOW NOISE: 3.2 dB (TYP.) Description The A61 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

CA61

Abstract: SMA61 surface mount transistor A61
Contextual Info: A61 / SMA61 Cascadable Amplifier 2 to 6 GHz Rev. V3 Features Product Image • WIDE BANDWIDTH: 2-6 GHz • MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. • LOW NOISE: 3.2 dB (TYP.) Description The A61 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance

transistor c 2060

Abstract: CA61 SMA61
Contextual Info: A61/SMA61 2 TO 6 GHz CASCADABLE AMPLIFIER • WIDE BANDWIDTH: 2-6 GHz · MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. · LOW NOISE: 3.2 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency Small Signal Gain (min.)

Contextual Info: A611/SMA611 2000 TO 6000 MHz CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 3.2 dB TYP. · HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc · HIGH OUTPUT POWER: +12.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 6/01)* Characteristics Typical Frequency

CA61

Abstract: SMA61
Contextual Info: A61/SMA61 2 TO 6 GHz CASCADABLE AMPLIFIER • WIDE BANDWIDTH: 2-6 GHz · MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. · LOW NOISE: 3.2 dB (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 1/02)* Characteristics Typical Frequency Small Signal Gain (min.)

ca611

Abstract: A611 SMA611
Contextual Info: A611/SMA611 2000 TO 6000 MHz CASCADABLE AMPLIFIER • LOW NOISE FIGURE: 3.2 dB TYP. · HIGH EFFICIENCY: 31 mA (TYP.) at +5 Vdc · HIGH OUTPUT POWER: +12.5 dBm (TYP.) Typical Performance @ 25°C Specifications (Rev. Date: 2/03)* Characteristics Typical Frequency

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

Contextual Info: u u U A61 / SMA61 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 2-6 GHz MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. LOW NOISE: 3.2 dB (TYP.) Outline Drawings A61 Specifications* z ' Characteristics Typical 0°C to 50°C

WJ-CA61

Contextual Info: WJ-A61 / SMA61 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 2-6 GHz MEDIUM OUTPUT LEVEL: +12.5 dBm TYP. LOW NOISE: 3.2 dB (TYP.) Outline Drawings A61 Specifications* 0.200 (5.03) Characteristics Guaranteed

Contextual Info: WJ-A61-1 /SMA61-1 2 to 6 GHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT WIDE BANDWIDTH: 1-6 GHz TYP. HIGH POWER: +20 dBm (TYP.) LOW NOISE: 3.4 dB (TYP.) Specifications* Outline Drawings A61-1 Guaranteed Typical Characteristics 0° to 50°C

7805 sot23

Abstract: 2N3904 A30 surface mount transistor A40 Y5 series surface mount transistor PCI5V32BIT bc 7805 2b9 transistor PCI5V32 Y4 series surface mount transistor sb6 sot23
Contextual Info: PMC-Sierra, Inc. APPLICATION NOTE ISSUE 3 PM7975 NIC LASAR Opitcal Network Interface Card NIC PM7375 LASAR155 TM LASAR OPTICAL NETWORK INTERFACE CARD (NIC) REFERENCE DESIGN Preliminary Information Issue 3: March 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300

B38 SMD Transistor

Abstract: 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC
Contextual Info: 5 +3VR +3VR C27 0.01UF CC0805 4 +3VR C38 0.01UF CC0805 +3VR C29 0.01UF CC0805 C21 0.01UF CC0805 +3VR +3VR C20 0.1UF CC0805 +3VR C32 0.1UF CC0805 3 2 +3VR C37 0.1UF CC0805 1 +3VR EEDI/LED0# LED2#/SRDCLK C14 0.1UF CC0805 EEDI/LED0# LED2#/SRDCLK R1 1.5K CR0805

MAAM-008863

Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
Contextual Info: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America

AH 503 hall sensor

Abstract: schematic diagram power supply str f6654 schematic diagram power supply str f6656 of AH 503 hall sensor str f6654 STR-F6654 STR-F6656 TRANSISTOR J 5804 STR-S5707 STR-S6708 schematic diagram
Contextual Info: A Sanken Company www.allegromicro.com Allegro MicroSystems, Inc. specializes in the design and manufacture of advanced mixed-signal analog + digital integrated circuits. Allegro, an American-managed, wholly-owned subsidiary of Sanken Electric Co., Ltd., combines 30+ years of

PH1819-60

Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
Contextual Info: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies

spf 9001 sanken

Abstract: SANKEN power supply sanken transistor Shortform Transistor Guide militar capacitors strs6709 sanken power transistor 2SA1216 semiconductors cross reference power supply SAMSUNG MONITOR str str 6707 diagram guide
Contextual Info: A Sanken Company www.allegromicro.com Allegro MicroSystems, Inc. specializes in the design and manufacture of advanced mixed-signal analog + digital integrated circuits. Allegro, an American-managed, wholly-owned subsidiary of Sanken Electric Co., Ltd., combines 30+ years of

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

M38UC

Abstract: Stellex M38UC SM4T mixer M38UC-150 a56 transistor 952 STELLEX SFD25 M38DC-400 transistor MY51 transistor MY52 M38UC-400
Contextual Info: M/A-COM, Inc. 1011 Pawtucket Blvd. Lowell, MA 01853-3295 RF and Microwave Products North America MSBU Component Operations Tel: 800.366.2266 Fax: 800.618.8883 Europe/Africa/Middle East Tel: 44.1344.869.595 Fax: 44.1344.300.020 Asia/Pacific Tel: 81.44.844.8296

MP 7721

Abstract: IEC6068-2-58 IPC 7351/7355 IPC-7351 to252 IPC 7355 JESD22-A111 JEDEC-J-STD-20 JESD22B-102 MICA WAFER J-STD-033
Contextual Info: Additional Information, DS1, March 2008 Recommendations for Assembly of Infineon TO Packages Edition 2008-03 Published by Infineon Technologies AG 81726 München, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

how to test scr

Contextual Info: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They

LMV711

Abstract: LMV712 LMV712LD LMV712LDX LMV712MM LMV712MMX amplifier A62 marking
Contextual Info: LMV712 Low Power, Low Noise, High Output, RRIO Dual Operational Amplifier with Independent Shutdown General Description Features The LMV712 duals are high performance BiCMOS operational amplifiers intended for applications requiring Rail-to-Rail inputs combined with speed and low noise. They