SURFACE MOUNT 702 TRANSISTOR Search Results

702 sot 23

Abstract: RG 702 Diode 702 mosfet 702 sot-23 2N7002 MARKING 702 SOT23 transistor 702 702 TRANSISTOR sot-23 702 sot 702 transistor sot 23 marking 702 sot23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

702 TRANSISTOR

Abstract: 702 TRANSISTOR sot-23 702 sot 23 sot-23 MARKING CODE 70.2 702 mosfet 2N7002 MARKING 702 RG 702 SOT23 transistor 702 code 702 702 sot-23
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

SOT23 transistor 702

Abstract: 702 mosfet 702 surface mount transistor
Contextual Info: 2N7002 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is a N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed

702 sot23

Contextual Info: SOT-23 TRANSISTORS continued TMOS FETs The following is a listing of small-signal surface mount TMOS FETs which exhibit low Ros(on) characteristics. Pinout: 1-Gate, 2-Source, 3-Drain Device Switching Time V GS(th) R DS(on) @ I d Marking Ohm mA BVqss Volts

surface mount 702 TRANSISTOR

Abstract: marking H4 702 TRANSISTOR npn MARKING 702 6pin
Contextual Info: UMH4N Transistor, digitai, dual, NPN, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) package UMH4N (UMT6) package marking: H4 2.0±0.2 package contains two independent NPN digital transistors (DTC114TKA), each with one resistor same size as UMT3 (UMT, SC-70) so

702 TRANSISTOR npn

Abstract: transistor NF marking code nf 015 surface mount 702 TRANSISTOR
Contextual Info: Centrar CZT5551 Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5551 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high volt­

N-Channel JFET FETs

Abstract: ft960 Field Effect Transistors C847 P-Channel Depletion Mosfets P-Channel Depletion Mode FET p-channel jfet rf JFET with Yos MTP75N06HD BS17
Contextual Info: ON Semiconductor Field Effect Transistors and Power TMOS MOSFETs ¨ Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These devices are

marking s17

Contextual Info: IIAIEt SURFACE MOUNT TRANSISTORS MPN TRANS STORS/SOT89A Marking Code Type Number BF622 OPERATING/STORAGE TEMPERATURE RANGE -55°C to +150°C C &V f @ V /l h @ V /I ' V e * v ce ' i c •; ^C E O V/mA max.V mA/mA max.nA V MHz V/niA inax.pF V DC 300 1 min.50

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2N7002T SOT-523 Unit: mm +0.1 1.6-0.1 • Features +0.1 -0.1 1.0 +0.05 0.2-0.05 +0.01 0.1-0.01 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Low Gate Threshold Voltage 0.55 ● Low On-Resistance ● Low Input Capacitance

Contextual Info: Transistors IC MOSFET SMD Type Product specification 2N7002W • Features SOT-323 Unit:mm 1.3±0.1 ● Low On-Resistance 2 2.3±0.15 ● Low Input Capacitance 1.25±0.1 1 0.525 0.65 ● Low Gate Threshold Voltage ● Fast Switching Speed 0.36 3 ● Low Input/Output Leakage

BF546

Abstract: marking 6k sot-23 package BF5459L F5 sot223 BFJ177 F5 marking sot223 MLL34 M6A sot-23 6z sot223 marking Cross Reference sot
Contextual Info: MOTOROLA SC 4bE T> • XSTRS/R F b 3 b 7 2 S 4 D O' îb S Ot 2 « f l O T t — 3 SO T-23 T R A N S IS T O R S (continued) Unipolar (Field Effect) Transistors (JFETs) RF JFETs Pinout: 1-Drain, 2-Source, 3-Gate NF Device Marking Typ (dB) f (MHz) Min (mmhos)

2N7002LT1

Abstract: 702 TRANSISTOR sot-23 2N7002LT1 Motorola 702 surface mount transistor
Contextual Info: MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel Enhancement 2N7002LT1 3 DRAIN Motorola Preferred Device 1 GATE 3 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc

2N7002LT1

Contextual Info: I MOTOROLA Order this document by 2N7002LT1/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7002LT1 N -C h a n n e l E n hancem en t 3 drain Motorola Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit V d SS 60 Vdc VDGR 60 Vdc 'D Id mAdc 'd m

NEC k 2134 transistor

Abstract: k 2134 nec nec gaas fet marking NEC D 809 k NEC 2134 transistor NE32584
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. PACKAGE DIMENSIONS Unit: mm

Contextual Info: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available

MP42141

Abstract: RF TRANSISTOR NPN MICRO-X low noise transistors microwave GHZ micro-X Package MP4214135 MP4214100 MP42141-509 S21E S22E MICRO-X
Contextual Info: Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure 2.3dB Typical @ 1.0 GHz • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available

2N7002TGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2N7002TGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in automotive and general purpose

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

D2504 transistor

Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

Contextual Info: W J - A 7 - 2 1 S M A 7 - 2 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 2.2 dB TYP. HIGH OUTPUT POWER: +19 dBm (TYP.) HIGH THIRD ORDER IP: +35 dBm (TYP.) LOW DC CURRENT: 25 mA (TYP.) @ +15 Vdc Outline Drawings

irg7ic

Abstract: transistor IC 12A 400v IRG7
Contextual Info: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner