SUPERSOT 6 TE Search Results

supersot 6 TE

Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige

D marking PNP

Abstract: MARKING IC RP 6 PR63
Contextual Info: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

marking Y1 transistor

Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

transistor Y2

Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
Contextual Info: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful

33206

Contextual Info: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33206 ACCEPTS THESE DEVICES SOT-26, SOT-457 SC-59-6, SC-74-R TSOT-23-6, TSOP-6 B ANALOG RJ-6, UJ-6 FAIRCHILD SuperSot-6 I.R. Micro-6 * LINEAR S6 PKG.

Contextual Info: FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Value Units VCEO Symbol Collector-Emitter Voltage Parameter

FB222

Abstract: SOIC1
Contextual Info: éùxim jéM w . « $ * # Discrete POW ER & Signal _ _ Technologies i ùiOiài FMB2222A / FMB2222A FFB2222A FFB2222A man:- m k. MMPQ2222A E2 C1 / MMPQ2222A C2 B1 pin#1 E1 pin#1 B1 SC70-6 SuperSOT -6 M a rk : .1P M a rk : .1P SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier

Contextual Info: FMBS2383 NPN Epitaxial Silicon Transistor Features • Power Amplifier • Collector-Emitter Voltage : VCEO=160V • Current Gain Bandwidth Product : Tf =120MHz E C 1 6 2 5 3 4 C B C SuperSOT TM C -6 Marking : 2383 Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted

FMBA14

Contextual Info: FMBA14 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1N NPN Multi-Chip Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FMB100
Contextual Info: FMB100 FMB100 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .NA Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings*

Contextual Info: FMBA06 FMBA06 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1G Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings*

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

Contextual Info: s e Mit“ a noi -intoa > FMB2907A MMPQ2907A E2 B2 C1 / MMPQ2907A C2 w pin#1 B1 E1 pin#1 B1 SC70-6 SuperSOT -6 M ark: .2F Mark: .2F SOIC-16 C1 PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose am plifier and switch requiring

FMB100

Contextual Info: FMB100 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .NA NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings* Symbol TA =25°C unless otherwise noted

FMBA56

Contextual Info: FMBA56 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .2G PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

3843 application note

Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N FMBA06 IC 3843 8 Pin
Contextual Info: FMBA06 FMBA06 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1G Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings*

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FMB200
Contextual Info: FMB200 FMB200 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .N2 Dot denotes pin #1 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings*

ssot-6

Abstract: SSOT6 100C CBVK741B019 F63TNR FDC633N FMBS549
Contextual Info: FMBS549 FMBS549 NC C E Package: SuperSOT-6 single Mark : .S1 B C C Pin 1 PNP Low Saturation Transistor ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. Sourced from process PB. Absolute Maximum Ratings*

Contextual Info: FMB100 FMB100 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .NA Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 10. Absolute Maximum Ratings*

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

Contextual Info: I D iscrete POWER & Sign al Technologies IL«*P S S M C O N D L IS T O R » FMBA06 pin#1 B1 SuperSOT -6 Mark: .1G NPN Multi-Chip General Purpose Amplifier T his device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 33.

FMBA06

Contextual Info: FMBA06 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1G NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

FMB200

Contextual Info: FMB200 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .N2 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted