SUPERSOT 6 Search Results

Supersot6

Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
Contextual Info: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5

supersot 6 TE

Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige

marking Y1 transistor

Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

transistor Y2

Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
Contextual Info: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful

FMMT617

Abstract: FMMT-617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 V12E
Contextual Info: SuperSOT FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 SOT23 NPN SILICON POWER TRANSISTORS SWITCHING ISSUE 3- NOVEMBER Id 1995 FEATURES ‘ 625mW POWER DISSIPATION * Ic CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics * Extremely Low Saturation Voltage E.g. 8mV Typ.

Contextual Info: FMBM5401 PNP General Purpose Amplifier FMBM5401 PNP General Purpose Amplifier • This device has matched dies in SuperSOT-6. C2 E1 C1 B2 E2 pin #1 B1 SuperSOTTM-6 Mark: .4S2 Absolute Maximum Ratings* Value Units VCEO Symbol Collector-Emitter Voltage Parameter

sot23-6 marking 718

Abstract: 718 SOT23 ZXT10P20DE6 ZXT10P20DE6TA ZXT10P20DE6TC DSA0037439
Contextual Info: ZXT10P20DE6 SuperSOT 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-20V; RSAT = 96m ; IC= -2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

Contextual Info: FMBA06 FMBA06 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1G Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings*

Contextual Info: SEM ICONDUCTOR tm FSBCW30 SuperSOT -3 PNP General Purpose Amplifier T his device is designed for general purpose m edium power am plifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See BC857A for characteristics. Absolute Maximum RâtinÇjS

ZXT10P40DE6

Abstract: ZXT10P40DE6TA ZXT10P40DE6TC MARKING 720 NS435 DSA0037441
Contextual Info: ZXT10P40DE6 SuperSOT 40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-40V; RSAT = 105m ; IC= -2A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

3843 application note

Abstract: SSOT-6 CBVK741B019 F63TNR FDC633N FMBA06 IC 3843 8 Pin
Contextual Info: FMBA06 FMBA06 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1G Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings*

SSOT-6

Abstract: CBVK741B019 F63TNR FDC633N FMB200
Contextual Info: FMB200 FMB200 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .N2 Dot denotes pin #1 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68. Absolute Maximum Ratings*

NDH8504P

Contextual Info: February 1997 NDH8504P Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

Contextual Info: September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high

FDN337N

Abstract: SOIC-16
Contextual Info: March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

iss-400 diode

Abstract: FDN338P SOIC-16
Contextual Info: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

FMBA06

Contextual Info: FMBA06 C2 E1 C1 B2 E2 pin #1 B1 SuperSOT-6 Mark: .1G NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

F63TNR

Abstract: F852 FDR8308P SOIC-16 SSOT-8
Contextual Info: November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs have been designed to provide a low profile, small footprint alternative to industry standard SO-8 little foot type product.

Contextual Info: s e y iG œ D u C T a R « FMB100 pin#1 B1 SuperSOT -6 Mark: .NA NPN Multi-Chip General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 300 mA. Sourced from Process 10. AbSOlUtG Maximum RâtinÇjS

LTED

Contextual Info: M M IC Q N B L C M R » FMB200 pin#1 B1 SuperSOT -6 M ark: .N2 PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose am plifier applications at collector currents to 3 0 0 mA. Sourced from Process 68. Absolute Maximum RatiriQS

SSOT-3

Abstract: CBVK741B019 F63TNR FSB560 FSB560A MMSZ5221B SuperSOTTM -3
Contextual Info: FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

SSOT-3

Abstract: CBVK741B019 F63TNR FSB660 FSB660A MMSZ5221B
Contextual Info: FSB660/FSB660A FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted