SUPERSOT 6 Search Results

Supersot 6

Abstract: Supersot6 electrical
Contextual Info: Discrete Temperature range Software version Revision date 2N3903 TO-92-3 Electrical 25°C N/A N/A FMB100 SuperSOT-6 Electrical 25°C 5.0 Apr 11, 2002 FMB5551 SuperSOT-6 Electrical 25°C 5.0 Apr 11, 2002 FMBA06 SuperSOT-6 Electrical N/A 5 Mar 13, 2002 FMBA14

transistor Y2

Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
Contextual Info: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package

FMMT620

Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
Contextual Info: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users

Supersot6

Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
Contextual Info: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5

VCEO80V

Abstract: FMMT620 FMMT620TA FMMT620TC
Contextual Info: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users

supersot 6 TE

Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige

Contextual Info: SEMICONDUCTOR t m FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at

FMBA0656

Abstract: transistor marking E2 Supersot 6 transistor marking c1
Contextual Info: FMBA0656 Package: SuperSOT-6 Device Marking: .003 C2 E1 C1 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package This device was designed for general purpose amplifier applications at collector currents to 300mA.

Contextual Info: SEMICONDUCTOR t m FMB3946 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful

transistor Y4

Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Contextual Info: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package

marking Y1 transistor

Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

D marking PNP

Abstract: MARKING IC RP 6 PR63
Contextual Info: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

marking Y1 transistor

Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Contextual Info: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

marking Y1 transistor

Abstract: fairchild pin 1 marking
Contextual Info: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring

bss170

Abstract: BAT54S/SM NPN Transistor BC817-40 221 sot23 FMMD2837 FMMD2835 FMMD2836 FMMD2838 SM NPN Transistor BC817-40 F2T694B BAR99
Contextual Info: SuperSOT Series ^ A:1 HIGH CURRENT SuperSOT TRANSISTORS {PD=625mW) Pinout: 1-Collector, 2-Emitter, 3-Basa V cbo VCEO le P,o, Type V V mA mW 15 15 3000 625 VcE sat) hFE fl a tlc /V c E m A /V Max V at Iq/I b mA Typ MHz 200/- 3000 / 2 0.10 10 00 /1 0 120 1 5 0 /-

Contextual Info: The SuperSOT Series The SuperSOT series of Bipolar transistors represent the leading edge in high current capability, very low saturation voltage Bipolar technology products. This range of devices capitalises on the optimised com bination o f an enhanced M atrix geom etry, a S u p e r-p em itter process and a

ty 617 equivalent

Abstract: B0140 MT619 FMMT619
Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSU E 3 - NOVEMBER 1995_ FEATURES * 625m W POWER DISSIPATION * * * * * lc CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)

Contextual Info: SuperSOT SOT23 PNP SILICON POWER SWITCHING TRANSISTORS FMMT717 FMMT718 FMMT720 FMMT722 FMMT723 ISSUE 3 JUNE 1996_ FEATURES * 625mW POWER DISSIPATION * * lc CONT 2.SA lc Up To 10A Peak Pulse Current * Excellent hfe Characteristics Up To 10A (pulsed)

FMMT617

Abstract: FMMT619 FMMT-617 FMMT618 FMMT624 FMMT625 FMMT717 V12E FMMT SYM80L
Contextual Info: SuperSOT FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 SOT23 NPN SILICON POWER TRANSISTORS SWITCHING ISSUE 3- NOVEMBER Id 1995 FEATURES ‘ 625mW POWER DISSIPATION * Ic CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics * Extremely Low Saturation Voltage E.g. 8mV Typ.

FMMT618

Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.

Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.

Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.

ZXT10P12DE6

Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Contextual Info: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

FMMT723

Abstract: FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 FMMT718 FMMT720 FMMT722
Contextual Info: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.