SUBCKT INCLUDE Search Results
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SUBCKT INCLUDE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| UC3572DTR |
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Negative output Flyback pulse width modulator including an undervoltage lockout circuit 8-SOIC 0 to 70 |
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| UC3572D |
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Negative output Flyback pulse width modulator including an undervoltage lockout circuit 8-SOIC 0 to 70 |
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| UC3572DG4 |
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Negative output Flyback pulse width modulator including an undervoltage lockout circuit 8-SOIC 0 to 70 |
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| TPS40400RHLR |
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3.0V - 20V, 30A, Synchronous Buck Controller with PMBus™, including Telemetry 24-VQFN -40 to 125 |
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| TPS40400RHLT |
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3.0V - 20V, 30A, Synchronous Buck Controller with PMBus™, including Telemetry 24-VQFN -40 to 125 |
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SUBCKT INCLUDE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RJU002N06
Abstract: 6913
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Original |
RJU002N06 RJU002N06 0000E-6 2045E-6 0000E6 00E-12 9717E-12 038E-12 6913 | |
RTQ020N03Contextual Info: SPICE PARAMETER RTQ020N03 by ROHM TR Div. * RTQ020N03 NMOSFET model * Date: 2006/09/20 * This model includes a diode between source and drain. *D G S .SUBCKT RTQ020N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
RTQ020N03 RTQ020N03 0000E-6 059E-6 000E-3 187E-3 0000E6 43E-12 | |
RSQ025P03Contextual Info: SPICE PARAMETER RSQ025P03 by ROHM TR Div. * RSQ025P03 PMOSFET model * Date: 2006/09/11 * This model includes a diode between drain and source. *D G S .SUBCKT RSQ025P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 |
Original |
RSQ025P03 RSQ025P03 0000E-6 037E-6 000E-3 063E-3 0000E6 00E-12 | |
RSQ035P03
Abstract: RSQ035P03 TR
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Original |
RSQ035P03 RSQ035P03 0000E-6 327E-6 000E-3 101E-3 0000E6 00E-12 RSQ035P03 TR | |
RSQ045N03
Abstract: 1352 30217
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Original |
RSQ045N03 RSQ045N03 0000E-6 728E-6 000E-3 907E-3 0000E6 00E-12 1352 30217 | |
RTR040N03
Abstract: MJ61
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Original |
RTR040N03 RTR040N03 0000E-6 379E-6 000E-3 916E-3 0000E6 00E-12 MJ61 | |
DIODE 433
Abstract: RTQ035P02 9508
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Original |
RTQ035P02 RTQ035P02 0000E-6 719E-6 000E-3 035E-3 0000E6 00E-12 DIODE 433 9508 | |
RSF014N03Contextual Info: SPICE PARAMETER RSF014N03 by ROHM TR Div. * RSF014N03 NMOSFET model * Date: 2006/09/15 * This model includes a diode between source and drain. *D G S .SUBCKT RSF014N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
RSF014N03 RSF014N03 0000E-6 6741E-6 000E-3 0000E6 52E-12 872E-12 | |
RHU003N03Contextual Info: SPICE PARAMETER RHU003N03 by ROHM TR Div. * RHU003N03 NMOSFET model * Date: 2006/09/07 * This model includes a diode between source and drain. *D G S .SUBCKT RHU003N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
RHU003N03 RHU003N03 0000E-6 5432E-6 0000E6 926E-12 9976E-12 171E-12 | |
MJ340
Abstract: RSS040P03 RS631 452 diode
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Original |
RSS040P03 RSS040P03 0000E-6 176E-6 000E-3 886E-3 0000E6 00E-12 MJ340 RS631 452 diode | |
RSS090P03Contextual Info: SPICE PARAMETER RSS090P03 by ROHM TR Div. * RSS090P03 PMOSFET model * Date: 2006/10/04 * This model includes a diode between drain and source. *D G S .SUBCKT RSS090P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 |
Original |
RSS090P03 RSS090P03 0000E-6 02E-6 0000E-3 60E-6 0000E6 7000E-9 | |
MJ124
Abstract: RSF010P03
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Original |
RSF010P03 RSF010P03 0000E-6 8455E-6 000E-3 0000E6 00E-12 882E-12 MJ124 | |
RTF020P02
Abstract: Rd355
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Original |
RTF020P02 RTF020P02 0000E-6 079E-6 0000E-3 557E-3 0000E6 00E-12 Rd355 | |
RHU002N06
Abstract: DIODE m1 TR 610 S
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Original |
RHU002N06 RHU002N06 0000E-6 32E-9 879E-3 0000E6 34E-12 027E-12 DIODE m1 TR 610 S | |
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RSS065N03
Abstract: rss065
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Original |
RSS065N03 RSS065N03 0000E-6 424E-6 000E-3 4483E-3 0000E6 78E-12 rss065 | |
RTQ025P02
Abstract: 25402E
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Original |
RTQ025P02 RTQ025P02 0000E-6 582E-6 000E-3 756E-3 0000E6 00E-12 25402E | |
IS553
Abstract: RJP020N06
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Original |
RJP020N06 RJP020N06 0000E-6 171E-6 000E-3 0000E6 78E-12 548E-12 IS553 | |
RTQ045N03
Abstract: MJ107
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Original |
RTQ045N03 RTQ045N03 0000E-6 703E-6 000E-3 021E-3 0000E6 00E-12 MJ107 | |
RTR020N05Contextual Info: SPICE PARAMETER RTR020N05 by ROHM TR Div. * RTR020N05 NMOSFET model * Date: 2006/09/27 * This model includes a diode between source and drain. *D G S .SUBCKT RTR020N05 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
RTR020N05 RTR020N05 0000E-6 786E-6 000E-3 255E-3 0000E6 28E-12 | |
DIODE m1
Abstract: nmosfet RJU003N03 97157 2451 nmos transistor m112 16300E
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Original |
RJU003N03 RJU003N03 0000E-6 2544E-6 000E-3 0000E6 00E-12 749E-12 DIODE m1 nmosfet 97157 2451 nmos transistor m112 16300E | |
8726
Abstract: RSL020P03 RD509
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Original |
RSL020P03 RSL020P03 0000E-6 814E-6 000E-3 911E-3 0000E6 00E-12 8726 RD509 | |
2996
Abstract: RSQ035N03
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Original |
RSQ035N03 RSQ035N03 0000E-6 952E-6 000E-3 621E-3 0000E6 70E-12 2996 | |
RJK005N03
Abstract: IS433
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Original |
RJK005N03 RJK005N03 0000E-6 7040E-6 000E-3 0000E6 72E-12 868E-12 IS433 | |
RSR025N03Contextual Info: SPICE PARAMETER RSR025N03 by ROHM TR Div. * RSR025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
RSR025N03 RSR025N03 0000E-6 722E-6 000E-3 478E-3 0000E6 34E-12 | |