NMOSFET Search Results

Contextual Info: RT9174 Preliminary Triple Linear Regulator Controllers General Description Features The RT9174 is a triple linear regulator controller designed for motherboard application. z Integrated Three Linear Controllers in a SOP-8 Package z Driving NPN or NMOSFET Sourcing > 100mA and Sinking ( > 5mA) Driver

RT9712D

Abstract: RT9712 RT9712C RT9712A
Contextual Info: RT9712 90mΩ Ω, 1A/1.5A High-Side Dual Power Switches with Flag General Description Features The RT9712 power-distribution switches are designed to fulfill the applications in heavy capacitive loads and shortcircuit situations. The device incorporates two 90mΩ NMOSFET power switches to fit power distribution systems

Contextual Info: Datasheet Controller ICs for High Side NMOSFET BD2270HFV General Description Key Specifications BD2270HFV is a gate driver for high side N-Channel MOSFET that comes with a discharge circuit for the output capacitive load. An internal charge pump enables the IC to drive the gate of an external high

RTQ035N03

Abstract: 0744
Contextual Info: SPICE PARAMETER RTQ035N03 by ROHM TR Div. * RTQ035N03 NMOSFET model * Date: 2006/09/20 * This model includes a diode between source and drain. *D G S .SUBCKT RTQ035N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

RSS130N03

Contextual Info: SPICE PARAMETER RSS130N03 by ROHM TR Div. * RSS130N03 NMOSFET model * Date: 2006/10/04 * This model includes a diode between source and drain. *D G S .SUBCKT RSS130N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

QS5U16

Contextual Info: SPICE PARAMETER QS5U16 by ROHM TR Div. * QS5U16 NMOSFET model * Date: 2006/09/08 * This model includes a diode between source and drain. *D G S .SUBCKT QS5U16 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1

2057

Abstract: d 966 RTL035N03
Contextual Info: SPICE PARAMETER RTL035N03 by ROHM TR Div. * RTL035N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RTL035N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

rds 4501

Abstract: 4501 4501 d RSS125N03
Contextual Info: SPICE PARAMETER RSS125N03 by ROHM TR Div. * RSS125N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS125N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

SP8K24

Contextual Info: SPICE PARAMETER SP8K24 by ROHM TR Div. * SP8K24 NMOSFET model * Date: 2006/10/12 * This model includes a diode between source and drain. *D G S .SUBCKT SP8K24 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1

KP103

Abstract: 95371 330E kp10330e6 KP1033
Contextual Info: SPICE PARAMETER QS6K1 by ROHM TR Div. * QS6K1 NMOSFET model * Date: 2006/09/05 * This model includes a diode between source and drain. *D G S .SUBCKT QS6K1 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=10.330E-6

3212

Abstract: M5248
Contextual Info: SPICE PARAMETER US5U1 by ROHM TR Div. * US5U1 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT US5U1 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=12.595E-6

MP6K62

Abstract: mp6k 6-20P
Contextual Info: SPICE PARAMETER MP6K62 by ROHM TR Div. * MP6K62 NMOSFET model * Date: 2008/01/29 *D G S .SUBCKT MP6K62 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH 11.3m D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1

RRS100N03

Abstract: 3573 M8122 M 9639 RRS100N
Contextual Info: SPICE PARAMETER RRS100N03 by ROHM TR Div. * RRS100N03 NMOSFET model * Date: 2007/11/14 *D G S .SUBCKT RRS100N03 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH 2.1m D2 11 21 DDG D3 22 21 DDG R2 2 22 14 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

RSS090N03

Abstract: diode 10e d 5027 16552 650 DIODE
Contextual Info: SPICE PARAMETER RSS090N03 by ROHM TR Div. * RSS090N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS090N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

5609 transistor

Abstract: DATASHEET 5609 DATASHEET 5609 transistor transistor 5609 5609 S 5609 SP8M21
Contextual Info: SPICE PARAMETER SP8M21 by ROHM TR Div. * SP8M21_N NMOSFET model * Date: 2006/10/12 *D G S .SUBCKT SP8M21_N 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=110.04E-6 + RS=10.000E-3 + RD=5.6579E-3 + VTO=2.1730

R5007ANX

Abstract: 0943 00E-6
Contextual Info: SPICE PARAMETER R5007ANX by ROHM TR Div. * R5007ANX NMOSFET model * Date: 2007/07/26 *D G S .SUBCKT R5007ANX 1 2 3 M1 11 22 3 3 MOS_N C1 1 3 10p D1 3 1 DDS R1 1 11 RTH .762 D2 11 21 DDG D3 22 21 DDG R2 2 22 27 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

rss065n06

Abstract: 10-25 RD 4512
Contextual Info: SPICE PARAMETER RSS065N06 by ROHM TR Div. * RSS065N06 NMOSFET model * Date: 2007/10/25 *D G S .SUBCKT RSS065N06 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH 6.67m D2 11 21 DDG D3 22 21 DDG R2 2 22 30 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

M56723

Abstract: M5672 SP8K63 M3909
Contextual Info: SPICE PARAMETER SP8K63 by ROHM TR Div. * SP8K63 NMOSFET model * Date: 2008/01/23 *D G S .SUBCKT SP8K63 1 2 3 M1 11 22 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH 7.96m D2 11 21 DDG D3 22 21 DDG R2 2 22 18 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1

RUF015N02

Contextual Info: SPICE PARAMETER RUF015N02 by ROHM TR Div. * RUF015N02 NMOSFET model * Date: 2007/03/22 * This model includes a diode between source and drain. *D G S .SUBCKT RUF015N02 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

RSS070N05

Abstract: 74102
Contextual Info: SPICE PARAMETER RSS070N05 by ROHM TR Div. * RSS070N05 NMOSFET model * Date: 2006/10/11 * This model includes a diode between source and drain. *D G S .SUBCKT RSS070N05 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

Contextual Info: SPICE PARAMETER QS5K2 by ROHM TR Div. * QS5K2 NMOSFET model * Date: 2006/09/08 * This model includes a diode between source and drain. *D G S .SUBCKT QS5K2 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=31.169E-6

RUM003N02

Abstract: 36144E VTO71 RB1000
Contextual Info: SPICE PARAMETER RUM003N02 by ROHM TR Div. * RUM003N02 NMOSFET model * Date: 2008/01/17 *D G S .SUBCKT RUM003N02 1 2 3 M1 11 2 3 3 MOS_N D1 3 1 DDS R1 1 11 RTH .565 .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 + W=1 + KP=4.9173E-6 + RS=10.000E-3

am 5869

Abstract: RS1937 RSS110N03
Contextual Info: SPICE PARAMETER RSS110N03 by ROHM TR Div. * RSS110N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS110N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6

GH mosfet

Abstract: half-bridge variable frequency drive circuit diagram AN-6003 MLP16 SOIC-16 FAN5110MX fan5110
Contextual Info: FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver Features Description ƒ Two-phase, N-channel MOSFET driver in a Single FAN5110 contains two N-channel MOSFET drivers on a single die in one package. It replaces two single-phase drivers in a multiple-phase PWM design. Each phase is