SUBCKT INCLUDE Search Results
SUBCKT INCLUDE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| UC3572DTR | Texas Instruments | Negative output Flyback pulse width modulator including an undervoltage lockout circuit 8-SOIC 0 to 70 |
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| UC3572D | Texas Instruments | Negative output Flyback pulse width modulator including an undervoltage lockout circuit 8-SOIC 0 to 70 |
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| UC3572DG4 | Texas Instruments | Negative output Flyback pulse width modulator including an undervoltage lockout circuit 8-SOIC 0 to 70 |
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| TPS40400RHLR | Texas Instruments | 3.0V - 20V, 30A, Synchronous Buck Controller with PMBus™, including Telemetry 24-VQFN -40 to 125 |
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| TPS40400RHLT | Texas Instruments | 3.0V - 20V, 30A, Synchronous Buck Controller with PMBus™, including Telemetry 24-VQFN -40 to 125 |
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SUBCKT INCLUDE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
RJU002N06
Abstract: 6913
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Original |
rju002n060000e-62045e-60000e6+4 | |
RTQ020N03Contextual Info: SPICE PARAMETER RTQ020N03 by ROHM TR Div. * RTQ020N03 NMOSFET model * Date: 2006/09/20 * This model includes a diode between source and drain. *D G S .SUBCKT RTQ020N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
rtq020n030000e-6059e-6000e-3+3 | |
RSQ025P03Contextual Info: SPICE PARAMETER RSQ025P03 by ROHM TR Div. * RSQ025P03 PMOSFET model * Date: 2006/09/11 * This model includes a diode between drain and source. *D G S .SUBCKT RSQ025P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 |
Original |
rsq025p030000e-6037e-6000e-3+3 | |
RSQ035P03
Abstract: RSQ035P03 TR
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Original |
rsq035p030000e-6327e-6000e-3+4 | |
RSQ045N03
Abstract: 1352 30217
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Original |
rsq045n030000e-6728e-6000e-3+5 | |
RTR040N03
Abstract: MJ61
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Original |
rtr040n030000e-6379e-6000e-3+4 | |
DIODE 433
Abstract: RTQ035P02 9508
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Original |
rtq035p020000e-6719e-6000e-3+5 | |
RSF014N03Contextual Info: SPICE PARAMETER RSF014N03 by ROHM TR Div. * RSF014N03 NMOSFET model * Date: 2006/09/15 * This model includes a diode between source and drain. *D G S .SUBCKT RSF014N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
rsf014n030000e-66741e-6000e-3+3 | |
RHU003N03Contextual Info: SPICE PARAMETER RHU003N03 by ROHM TR Div. * RHU003N03 NMOSFET model * Date: 2006/09/07 * This model includes a diode between source and drain. *D G S .SUBCKT RHU003N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
rhu003n030000e-65432e-60000e6+3 | |
MJ340
Abstract: RSS040P03 RS631 452 diode
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Original |
rss040p030000e-6176e-6000e-3+6 | |
RSS090P03Contextual Info: SPICE PARAMETER RSS090P03 by ROHM TR Div. * RSS090P03 PMOSFET model * Date: 2006/10/04 * This model includes a diode between drain and source. *D G S .SUBCKT RSS090P03 1 2 3 M1 1 2 3 3 MOS_P D1 1 3 DREV .MODEL MOS_P PMOS + LEVEL=3 + L=2.0000E-6 |
Original |
rss090p030000e-602e-60000e-3+3 | |
MJ124
Abstract: RSF010P03
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Original |
rsf010p030000e-68455e-6000e-3+4 | |
RTF020P02
Abstract: Rd355
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Original |
rtf020p020000e-6079e-60000e-3+4 | |
RHU002N06
Abstract: DIODE m1 TR 610 S
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rhu002n060000e-632e-9879e-3+5 | |
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RSS065N03
Abstract: rss065
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rss065n030000e-6424e-6000e-3+4 | |
RTQ025P02
Abstract: 25402E
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Original |
rtq025p020000e-6582e-6000e-3+4 | |
IS553
Abstract: RJP020N06
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Original |
rjp020n060000e-6171e-6000e-3+4 | |
RTQ045N03
Abstract: MJ107
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Original |
rtq045n030000e-6703e-6000e-3+4 | |
RTR020N05Contextual Info: SPICE PARAMETER RTR020N05 by ROHM TR Div. * RTR020N05 NMOSFET model * Date: 2006/09/27 * This model includes a diode between source and drain. *D G S .SUBCKT RTR020N05 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
rtr020n050000e-6786e-6000e-3+3 | |
DIODE m1
Abstract: nmosfet RJU003N03 97157 2451 nmos transistor m112 16300E
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Original |
rju003n030000e-62544e-6000e-3+10 | |
8726
Abstract: RSL020P03 RD509
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Original |
rsl020p030000e-6814e-6000e-3+5 | |
2996
Abstract: RSQ035N03
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Original |
rsq035n030000e-6952e-6000e-3+4 | |
RJK005N03
Abstract: IS433
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Original |
rjk005n030000e-67040e-6000e-3+4 | |
RSR025N03Contextual Info: SPICE PARAMETER RSR025N03 by ROHM TR Div. * RSR025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6 |
Original |
rsr025n030000e-6722e-6000e-3+3 | |