SU 179 TRANSISTOR Search Results

SU 179 transistor

Abstract: SU 179
Contextual Info: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single

Mosfet J49

Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912
Contextual Info: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •

L9181

Abstract: l6262 Nippon capacitors L 0946
Contextual Info: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc

SU 179 transistor

Contextual Info: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz

SU 179 transistor

Abstract: Motorola ic 1036 Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF141

Abstract: Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141 N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

IN5343

Contextual Info: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics

Contextual Info: MOTOROLA O rder this docum ent by M RF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S, R1 N-Channel Enhancement-Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz

of all 74 ic series

Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925
Contextual Info: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S

vk200 choke

Abstract: MRF140 motorola MRF140 511 MOSFET TRANSISTOR motorola 2204B J101 VK200-4B MRF140 equivalent Nippon capacitors
Contextual Info: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the

2SC1600

Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Contextual Info: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is

Motorola MRF183

Abstract: GS -L Capacitor
Contextual Info: MOTOROLA O rder this docum ent by M RF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S, R1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen­

Contextual Info: • rrr 7 ^ 5 3 7 005536^ 3 ■ ^ T - 3 3 - 0 ° l_ sg s-th o m so n b d i 75/77/79 ^ 7# B P 17 6 /78/80 S 6 S-TH0MS0N 30E D MEDIUM POWER LINEAR AND SW ITCHING APPLICATIONS D E S C R IP T IO N The BD175, BD177 and BD179 are silicon epitaxialbase NPN power transistors in Jedec TO-126 plas­

2SC3140

Abstract: L0801
Contextual Info: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis­ tors is designed fo r linear operation in the 500 to 1000 MHz

SF126

Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Contextual Info: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN

NE64535

Abstract: NE64500 nec08 2SC2585 NE645 2SC2273 0/2SC2585 mig mag 200 NE64508 s2212
Contextual Info: S bE N E C/ CALIFORNIA NEC D • b M 2 7 L tm 0 D 0 2 M 2 2 bDfl H N E C C NE64500 NE64508 NE64535 NE64587 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURED DESCRIPTION AND APPLICATIONS • HIGH fr fr = 8.5 GHz The NE645 series of NPN silicon transistors is designed for

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

Transistor BFr 99

Abstract: Transistor BFR 96 transistor 2sc 548
Contextual Info: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed

F 2452 mosfet

Abstract: DV2820 0823L R K J 0822
Contextual Info: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •

Contextual Info: KSC1730 NPN EPITAXIAL SILICON TRANSISTOR TV VHF, UHF TUNER OSCILLATOR TO-92 • High Current Gain Bandwidth Product fT=1100MHz Typ • Output Capacitance Cob=1.5pF (Max) ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Colloctor-Base Voltage Collector-Emitter \foltage

nec 2501 LD 932

Abstract: nec 2501 LD 229 NEC 2501 LE 240 transistor c 839 nec 2501 LD
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR juPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r U HF. PACKAGE DRAW INGS (U n it: m m) FEATURES 2.1 ± 0.1

MRF151G

Abstract: L8776 Nippon capacitors rf amplifier circuit mrf151g
Contextual Info: MOTOROLA O rder this docum ent by M RF151G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF151G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this