STY3 Search Results

STY30NA50

Abstract: Max247TM ST*30NA50
Contextual Info: STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.175 Ω 30 A TYPICAL RDS(on) = 0.15 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

schematic diagram UPS

Abstract: STY30NA50 DC/AC to DC smps circuit diagram schematic diagram welding device O247
Contextual Info: STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.175 Ω 30 A TYPICAL RDS(on) = 0.15 Ω EFFICIENT AND RELIABLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING

STY34NB50

Contextual Info: STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

2N1603A

Abstract: GE C20C GE C220C Motorola diodes IR-106C1 2N393 2N4171 C222C AEG TO2 MCR106-5
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 S107C2 n07C1 C106C C106C1 C106C3 S106C1 S106C2 n06C1 MCR106-5 IR106C1 :~~g~g~ 15 20 IR106C4 IR106C41 Cl0SC Cl0BC Cl0BC STY3004 2N1603A 2Nl776 ~~~H~~ 25 30 2Nl776B SN503 SNS03 TIC10SC Cl0SCl Cl0SCl Cl0SCl

STY34NB50

Contextual Info: STY34NB50 N - CHANNEL 500V - 0.11Q - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 . m . . . . . V dss RDS on Id 500 V < 0.1 3 Q 34 A TYPICAL R d s (o ii) = 0 .1 1 Q EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

y30nk

Abstract: Y30NK90Z
Contextual Info: STY30NK90Z N-CHANNEL 900V - 0.25Ω - 26A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY30NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V < 0.3 Ω 26 A 450 W TYPICAL RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Y30NK90Z

Abstract: STY30NK90Z schematic diagram welding device diode equivalent
Contextual Info: STY30NK90Z N-CHANNEL 900V - 0.21Ω - 26A Max247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STY30NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V < 0.26 Ω 28 A 500 W TYPICAL RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY

ST*30NA50

Contextual Info: s = 7 S GS-TH O M S O N Ä 7 # K l »iLiM (s iO (gS STY30NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY30NA50 V dss R DS(on) Id 500 V < 0.175 Î2 30 A • TYPICAL Ftos(on) = 0 .1 5 ^ . EFFICIENT AND RELIABLE MOUNTING

y34nb50

Abstract: smps new STY34NB50 Y34NB
Contextual Info: STY34NB50  N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE ST Y34NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

pw450

Contextual Info: STY30NK90Z N-CHANNEL 900V - 0.25Ω - 26A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY30NK90Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 900 V < 0.3 Ω 26 A 450 W TYPICAL RDS(on) = 0.25 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STY34NB50F

Abstract: 1590L
Contextual Info: STY34NB50F  N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

STY34NB50

Contextual Info: STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 • V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE

STY34NB50F

Contextual Info: STY34NB50F N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

STY34NB50F

Abstract: AD 277 J welding equipment smps schematic
Contextual Info: STY34NB50F N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50F • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.14 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING

STY34NK80Z

Contextual Info: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

STY34NB50

Contextual Info: STY34NB50 N - CHANNEL 500V - 0.11Ω - 34 A - Max247 PowerMESH MOSFET TYPE STY34NB50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.13 Ω 34 A TYPICAL RDS(on) = 0.11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

STY34NB50

Contextual Info: STY34NB50 N - CHANNEL 500V - 0.11 - 34 A - Max247 PowerMESH MOSFET TYP E V S TY34N B50 dss 500 V R d S o ii Id < 0 .1 3 Q. 34 A . . TYPICAL RDs(on) = 0.11 EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING . 100% AVALANCHE TESTED

28A zener diode

Abstract: STY34NK80Z schematic diagram welding device STY3
Contextual Info: STY34NK80Z N-CHANNEL 800V - 0.20Ω - 28A Max247 Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STY34NK80Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 800 V < 0.24 Ω 28 A 450 W TYPICAL RDS(on) = 0.20 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

CT-1014

Contextual Info: STY30NK90Z N-channel 900V - 0.21Ω - 26A - Max247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID pW STY30NK90Z 900V <0.26Ω 28A 500W • Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized

stu9nc80zi

Abstract: STL5NK65Z stp3nc90zfp STB45NF06 dpak DIODE IRF640 morocco STS3DPFS45 IRF540 complementary STGB10NB37LZ STP14NK50Z
Contextual Info: MOSFETs & IGBTs Progress in Power Switching Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions VDss V RDS(on) @ 10V (Ω) P/N ID(cont) (A) RDS(on) @ 4.5V (Ω) Qg @ 10V(Typ) (nC) -60 -30 -20 30 100 0.27 0.165 0.155 0.065 0.8 STT2PF60L

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

AN-CoolMOS-01

Abstract: AN-CoolMOS-04 SPW17N80C2 irfp450 mosfet full bridge transistor SMD v1 MOSFET siemens semiconductor 1988 led smps* ZVT 47n60s5 to247 SPN04N60C2 SPN01N60S5
Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-07 CoolMOS - Frequently Asked Questions Author: Ilia Zverev Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS - Frequently Asked Questions

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision