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    STMicroelectronics

    STMicroelectronics STY34NB50

    Power Field-Effect Transistor, 34A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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    Vyrian STY34NB50 11,760
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    STY34NB50

    Contextual Info: TY34NB50 N - CHANNEL 500V - 0.11 - 34 A - Max247 PowerMESH MOSFET TYP E V S TY34N B50 dss 500 V R d S o ii Id < 0 .1 3 Q. 34 A . . TYPICAL RDs(on) = 0.11 EXTREMELY HIGH dv/dt CAPABILITY . ± 30V GATE TO SOURCE VOLTAGE RATING . 100% AVALANCHE TESTED


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    sty34nb50max247ty34ngc75700+1gc75710 PDF