STRS 20 Search Results

BC 177 transistor

Abstract: TRANSISTOR BC 384 MJ16110 transistor a013 MJH16110 AM603 AM503 MJ16010 MUR870 P6302
Contextual Info: MOTOROLA SC I X STRS/R F 1 EE 0 I MOTOROLA b3L7E5M D0flSLb4 ^ I T - 3 3 -1 3 Order this data sheet by MJ16110/D SEMICONDUCTOR TECHNICAL DATA M J16110 MJH16110 Designer's Data Sheet IMPN Silico n Pow er Transistors Switchmode III Bridge Series POWER TRANSISTORS

strs 20

Abstract: str+s+6309
Contextual Info: MADE IN USA .315" 8 mm DIAMETER ROUND CROSS-SECTION SINGLE-END TERMINAL Style STRS ߜ Steel Sheath ߜ 150 - 2,050 Watts ߜ 120 and 240 Volt ߜ 4 - 20 W/In2 ߜ 750°F (400° C) Max. Sheath Temperature Dimensions 10 (25) 0.315" (8mm) Dia. Steel Sheath 1/2

BUZ-10L

Abstract: mtp23n BUZ10L
Contextual Info: MOTOROLA SC X STRS/R F 2bE D b3b72SM OGICHDG 1 O rder this d ata sheet by B U Z 10U D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ10L M TP23N 05L Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate These T M O S Power FETs are designed for high speed,

MJ75BX100

Contextual Info: 6 3 6 7 2 54 MOTOROLA MOTOROL A ^ SC X STRS/R F D F|b3b7ES4 D T # -3 5 9 6D 8 1 4 8 7 Order this data sheet by MJ75BX100/D 0DÖ14Ö7 4 f SEMICONDUCTOR TECHNICAL DATA MJ75 B X 100 NPN Silico n Pow er Transisto r Module Energy M anagement S eries DUAL TRI-STAGE

MJ150BX100

Abstract: DD81S
Contextual Info: 6367254 MOTOROLA SC X STRS/R MOTOROLA ^ F 96D 8 1 5 0 3 I)"I SEMICONDUCTOR D J -5 3 '% > DD81SD3 1 | a B B B S B B B B TECHNICAL DATA MJ150BX100 N P N S ilic o n P o w e r T ra n s is to r M o d u le Energy M anagem ent Series These power transistors are designed for industrial service under practical operating

strs 20

Abstract: IOT7210 03v0-c
Contextual Info: Electrical Characteristics Absolute Maximum Ratings Exposing the device to stresses above those listed here could cause permanent damage to the IOT7210. The device is not meant to be operated under conditions outside the limits described in this specification. Exposure to absolute maximum

Contextual Info: I 4 • 3 0 -$- -E3- C'oI 'ri . -l IDRG No. CP40347 THIS DRAWING AND THE COPYRIGHT AND DESIGN RIGHT THEREIN ARE THE PROPERlY OF OXlEY DEVELOPMENTS CO. Ltd. AND MUST NOT BE REPRODUCED OR DISCLOSED TO A THIRD PARlY WITHOUT PRIOR WRITTEN CONSENT OF THE COMPANY.

ST90T27B6

Abstract: ST90T27 ST90E27 CDIP40-W st90t28b SGS microcontroller 33WH CLCC44-W
Contextual Info: SGS-THOMSON HD E^ IILICÎ^(â IKlDei 16 K EPROM ST90E27/T27 ST90E28/T28 HCMOS MCUs WITH RAM • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time: 500ns (12MHz internal) ■ Internal M em ory: EPROM 16Kbytes RAM

Contextual Info: SGS-THOMSON HD E[fil IILICÎ^(â IKlDSl ST9040 16K ROM HCMOS MCU WITH EEPROM, RAM AND A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal) ■ Internal Memory : ROM 16K bytes

ST90T27

Contextual Info: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027

QMA INVERTER

Abstract: HLX quartz ST6398 EPROM 27256 programmer schematic ST9027 ST9028 ST90R28 SGS M74HC04 tda 835 cj CLCC44-W
Contextual Info: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027

ST6398

Abstract: HLX quartz hlx crystal QMA INVERTER setting data hlx 12Mhz crystal oscillator RG61 SGS M74HC04 sda 20560 hlx* crystal QMA INVERTER
Contextual Info: SGS-THOMSON [M œ [lL iû r a M O i S T 9 0 2 7 , S T 9 0 2 8 16K ROM / 256 RAM HCMOS MCUs • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal Memory : ROM RAM ST9027

st90r50

Contextual Info: SGS-THOMSON [ M œ [ lL iû r a M O i S T 9 0 R 5 0 ROMLESS HCMOS MCU WITH BANKSWITCH AND A/D CONVERTER PRELIMINARY DATA • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ 224 general purpose registers available as RAM,

ST90T36C6

Abstract: ST9036C ST9036C1 microcontroller ST9036 lc 76 adg hs6 marking TC 4863 ZCPL1 equivalent for tda 4863 ic ST9030
Contextual Info: SGS-THOMSON [ M œ [ lL iû r a M O i S T 9 0 3 6 16K ROM / 256 RAM HCMOS MCU WITH RAM AND A/D CONVERTER • Register oriented 8/16 bit CORE with RUN, WFI and HALT modes ■ Minimum instruction cycle time : 500ns (12MHz internal ■ Internal M em ory:

Contextual Info: Product specification Philips Semiconductors-Signetics Linear Products High-speed dual-differential comparator/sense amp FEATURES APPLICATIONS • 15ns maximum guaranteed propagation delay • A-to-D conversion • 20 iA maximum input bias current NE522 PIN CONFIGURATION

0405B

Abstract: NE522 NE522D NE522N TI-03 VV510
Contextual Info: Product specification Philips Semiconductors Linear Products High-speed dual-differential comparator/sense amp NE522 PIN CONFIGURATION FEATURES • 15ns maximum guaranteed propagation delay D ,N Packages • 20nA maximum input bias current w • TTL-compatible strobes and outputs

NE522

Contextual Info: Product specification Philips Semiconductors Linear Products High-speed dual-differential comparator/sense amp FEATURES NE522 PIN CONFIGURATION • 15ns maximum guaranteed propagation delay D ,N Packages _ w _ • 20nA maximum input bias current • TTL-compatible strobes and outputs

TRANSISTOR PHL 25 amp

Abstract: 0405B NE522 NE522D NE522N I2111
Contextual Info: P roduct specification P hilips S em iconductors Linear Products High-speed dual-differential comparator/sense amp NE522 PIN CONFIGURATION FEATURES • 15ns maximum guaranteed propagation delay D, N Packages • 20nA maximum input bias current • TTL-compatible strobes and outputs

IOT7210P

Abstract: IOT7210T IOT7210 SN75161 PD7210 SN75160 6D120 strs 20 MC3448AX4 03v0-c
Contextual Info: IOT7210 Low-Power CMOS IEEE 488 Controller Device NEW Features • Completely meets IEEE Standard 488-1978: - SH1, source handshake - AH1, acceptor handshake - T5 or TE5, talker or extended talker - L3 or LE3, listener or extended listener - SR1, service request

Power IC

Contextual Info: Custom IC • Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. ■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. ■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic

Power IC

Contextual Info: Custom IC • Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. ■ Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. ■ Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic

STRS60

Contextual Info: MADE IN USA .315" 8 mm DIAMETER ROUND CROSS-SECTION SINGLE-END TERMINAL Style STRI ߜ INCOLOY Sheath ߜ 225 - 2,400 Watts ߜ 120 and 240 Volt ߜ 4 - 30 W/In2 ߜ 1600°F (870° C) Maximum Sheath Temperature Dimensions 10 (25) 0.315" (8 mm) dia. INCOLOY Sheath

Contextual Info: 01ZA8.2 TO SHIBA TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 0 1 Z A 8 .2 Unit in mm DIODES FOR PROTECTING AGAINST ESD 1.6 ± 0.1 Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the

strs 20

Abstract: NE522 0405B NE522D NE522N
Contextual Info: Philips Semiconductors Linear Products Product specification High-speed dual-differential comparator/sense amp FEATURES NE522 PIN CONFIGURATION • 15ns maximum guaranteed propagation delay • 20µA maximum input bias current • TTL-compatible strobes and outputs