STPS3045G Search Results

STPS3045G

Abstract: STPS3045G-TR DSA00103920.txt
Contextual Info: STPS3045G POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 30 A VRRM 45 V Tj (max) 175°C VF (max) 0.63 V K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE HIGH DISSIPATION MINIATURE PACKAGE

STPS3045G

Abstract: STPS3045G-TR
Contextual Info: STPS3045G POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 30 A VRRM 45 V Tj (max) 175°C VF (max) 0.63 V K FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE

Contextual Info: STPS3045G _POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 30 A V rrm 45 V Tj (max) 175°C V f (max) 0.63 V FEATURES AND BENEFITS • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING

STPS3045G

Abstract: STPS3045G-TR
Contextual Info: STPS3045G POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 30 A VRRM 45 V Tj (max) 175°C VF (max) 0.63 V K FEATURES AND BENEFITS • ■ ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE

STPS3045G

Contextual Info: STPS3045G  POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 30 A VRRM 45 V VF 0.63 V 1 and 3 4 4 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH DISSIPATION MINIATURE PACKAGE SMD PACKAGE 2 3 1 D2PAK DESCRIPTION

STPS3045G

Contextual Info: STPS3045G  POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 30 A VRRM VF 45 V 0.63 V 1&3 4 4 FEATURES AND BENEFITS 2 VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH DISSIPATION MINIATURE PACKAGE SMD 3 1 D2PAK (Plastic) DESCRIPTION

STPS3045G

Abstract: STPS3045G-TR STPS30
Contextual Info: STPS3045G  POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 30 A VRRM 45 V Tj (max) VF (max) 175°C 0.63 V K FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE HIGH DISSIPATION MINIATURE PACKAGE

Contextual Info: r z 7 SG S-THO M SO N ^7# MOœ iLEOTMÛS STPS3045G POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 30 A V rrm 45 V Vf 0.63 V 1 <4 3 —►(—4 FEATURES AND BENEFITS • ■ . ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH DISSIPATION MINIATURE PACKAGE

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

STPS20100CG

Abstract: STPS240CE STPS2045CG STPS745G
Contextual Info: POWER RECTIFIERS rz 7 SGS-THOMSON ^ 7/ POWER SCHOTTKY DIODES »aDœsiiLiiOTOiDËi SOT223 SMA SMB SMC DPAK D2PAK SURFACE MOUNT SCHOTTKY RECTIFIERS T j max =150°C except 15V, 25V and 60V Series) lo V rrm VF @ lo Max (A) (V) 1 I fsm (V) I r @ V rrm Max (mA)

stps3045cw

Abstract: STPS3100 stps20l40cw STPS6054CW STPS1045D STPS80L10TV STPS20100CG STPS2045CG
Contextual Info: DIODES SCHOTTKY RECTIFIERS DPAK TO220AC D2PAK TO220AB TO247 TM ISOTOP LOW VF SCHOTTKY RECTIFIERS TJ max =150°C (except for 10 & 15V) IR @ VRRM Max (mA) IFSM (V) VF @ IO Max (V) 5 25 0.35 175 80 STPS15L10G STPS15L25G ♦ STPS20L15G ♦ STPS10L40CG STPS20L25CG

stpr16

Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
Contextual Info: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •

b2545 transistor

Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
Contextual Info: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection

MR2835S equivalent

Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected

MUR1560 equivalent

Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
Contextual Info: Index and Cross Reference The following table represents an index and cross reference guide for all rectifier devices which are either manufactured directly by ON Semiconductor or for which ON Semiconductor manufactures a suitable equivalent. Where the ON

mur1650

Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
Contextual Info: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and

transistor U1620R

Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
Contextual Info: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave

A14F diode

Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
Contextual Info: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

equivalent components of diode 1N5399

Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
Contextual Info: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected