STP1013 Search Results

P1013

Abstract: MOSFET 20V 45A SC89 SC-89 MOSFET P 950 STP1013
Contextual Info: P1013 ST STP1013 Dual P Channel Enhancement Mode MOSFET -0.45A DESCRIPTION STP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

Contextual Info: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits

26BH

Abstract: STP03 STK 4144 application circuit SI002
Contextual Info: MICROELECTRONICS \_ J * Ê £re*//*nc* XL24E410 iflE* 4-Bit Microcontroller Emulator KEY FEATURES OVERVIEW • Low voltage, single power source V d d - 2.3 -5.5V ■ Memory — E2PROM for program (max.): 8192 x 8 bits — General-purpose RAM : 256 x 4 bits

Contextual Info: MICROELECTRONICS Exc»Mine* in 6* XL24E805 4-Bit Microcontroller KEY FEATURES OVERVIEW Cost-effective 4-bit microcontroller CMOS process for low current drain Low voltage, single power supply — VD D -2.5~5.5V 8192 bytes ROM 256 x 4 bits general-purpose RAM

POA11

Abstract: SI002 ADC04 H213 LCD03 marking CODE ck6 TMR02-0 ADC82 stp10
Contextual Info: W m*M MICROEL ECT RONI CS Exc»ll»nc8 in E* XL24805 Series 4-Bit Microcontroller KEY FEATURES OVERVIEW Cost-effective 4-bit microcontroller CMOS process for low current drain Low voltage, single power supply — VDD-2.0~5.5V 8192 X 8 bits ROM 256 x 4 bits general-purpose RAM