STMICROELECTRONICS SMD MARKING CODE Search Results

STMicroelectronics smd marking code

Abstract: smd marking code stmicroelectronics BGA bga 10x13 BGA 15X15 BGA 23X23 HEPTAWATT SMD Marking STMicroelectronics tqfp INFINEON package tqfp PART MARKING PLCC Part Marking STMicroelectronics Date Code Marking STMicroelectronics PACKAGE DPAK
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN MLD-MIC/05/943 Notification Date 02/23/2005 CONVERSION TO PB-FREE PRODUCTION MIC - MICROCONTROLLERS 1/4 PCN MLD-MIC/05/943 - Notification Date 02/23/2005 Table 1. Change Identification Product Identification Product Family/Commercial Product

STMicroelectronics smd marking code

Abstract: BGA and QFP Package 14x14 STMICROELECTRONICS MSL STMicroelectronics date code tssop-14 HiQuad package STMicroelectronics pentawatt date code opto mold compound infineon msl TQFP 14X20 ST TSSOP Marking
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN CRP/04/744 LEAD-FREE CONVERSION PROGRAM Compliance with RoHS 1 1 RoHS = Restriction of the use of certain Hazardous Substances European directive 2002/95/EC November 18, 2004 Page 1/12 2004 STMicroelectronics - All Rights Reserved

st smd IC marking code

Abstract: 2N5154ESYHRT
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

STMicroelectronics smd marking code

Abstract: smd transistor marking A2 TRANSISTOR SMD MARKING CODE A1 smd transistor marking B3 transistor smd marking 94 TRANSISTOR SMD MARKING CODES marking code 51 SMD Transistor st smd IC marking code NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE d2
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

520301006R

Abstract: 2N5154RESYHRG
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics

marking code 51 SMD Transistor

Abstract: STMicroelectronics smd marking code st smd IC marking code smd transistor marking A2 smd transistor marking B3 SMD TRANSISTOR MARKING code TC NPN TRANSISTOR SMD MARKING CODE B2 TRANSISTOR SMD MARKING CODE A1 smd marking code stmicroelectronics ic smd 851
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate

do-201 footprint

Abstract: st smd IC marking code tvs SMC MARKING LNBTVS4-221S STMicroelectronics smd DIODE marking code 33 TVS SMC LNBTVS3-220 LNBTVS3-220U ON smd diode marking SMB package LNBTVS4-220S
Contextual Info: LNBTVSx-22xx Lightning protection for LNB power supply Features • 3 kV, 4 kV and 6 kV protection 8/20 µs ■ Axial & SMD package ■ Unidirectional and low VF (VF = 1.2 V at IF = 3 A) ■ Low clamping factor ■ Fast response time ■ UL recognize Order Code

Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics

Tape Resistivity 10E8 Ohm 10E4

Abstract: STMicroelectronics smd marking code smd diode order marking code stmicroelectronics 10E12 10E4 10E8 AN1235 IEC286-3 J-STD-020A Lead Free reflow soldering profile BGA
Contextual Info: AN1235 APPLICATION NOTE ASD and IPAD™ FLIP-CHIP: PACKAGE DESCRIPTION AND RECOMMENDATIONS FOR USE I - INTRODUCTION The competitive market of portable equipment, notably the mobile phone market, is driven by a challenging development of highly integrated products. To allow manufacturers of portable equipment to reduce

STMicroelectronics smd marking code

Abstract: TOPSIDE MARKING STMicroelectronics smd marking code stmicroelectronics AN1553 IEC286-3 SMD ST MICROELECTRONICS STMicroelectronics marking code date BGA
Contextual Info: AN1553 APPLICATION NOTE Flip-Chip 300µm recommendations for Audio Power Amplifier by Jean-Marc BUGNARD 1 - INTRODUCTION 2 - PRODUCT DESCRIPTION The competitive market of portable equipment, notably the mobile phone market, is driven by a challenging development of highly integrated

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: BYW81HR Aerospace 1 x 15 A and 2 x 15 A - 200 V fast recovery rectifier Datasheet - production data Description Packaged in hermetic TO-254 or SMD.5, this device is intended for use in medium voltage, high frequency switching mode power supplies, high frequency DC to DC converters, and other

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics

st smd diode marking code

Abstract: smd diode order marking code stmicroelectronics TRANSISTOR SMD MARKING CODES ESCC 5204/002 smd transistor A1 2N5153HR marking SMD CODES NV SMD TRANSISTOR smd code book B3 transistor smd marking codes list
Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 3 1 TO-257 TO-39 2 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

AN2348

Abstract: EIA standards 763 EIA 481-C flip chip bga 0,8 mm WLCSP stencil design EIA 763 Service Manual smd rework station WLCSP chip mount WLCSP flip chip BUT12
Contextual Info: AN2348 Application note IPAD 400 µm Flip Chip: package description and recommendations for use Introduction This document provides package and usage recomendation information for 400 µm pitch Flip Chips. For information on 500 µm Flip Chips, see Application note AN1235.

520301006

Abstract: Table of smd IC marking codes smd transistor marking A2 TRANSISTOR SMD MARKING CODES ESCC 5203/010 2N5154S1 st smd diode marking code NV SMD TRANSISTOR smd diode order marking code stmicroelectronics smd marking codes list
Contextual Info: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 2 TO-39 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified

60n3l

Abstract: 60N3LH5 60N3 STD60N3LH5 STU60N3LH5 STP60N3LH5
Contextual Info: STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features • ■ Order codes VDSS RDS on max ID STD60N3LH5 30 V 0.008 Ω 48 A STP60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5

5962F8762401VXA

Abstract: 5962F8762401vxc 5962F8776003VXA RHFAC164245 RHFAC2525K01V 54ac164245 5962F8761401VXC 5962F8760901VXA 5962F8755201VXC 5962R9858008VYC
Contextual Info: 54ACxxxx 54ACTxxxx Rad-hard advanced high-speed 5 V CMOS logic series Data brief Features • 2 to 6 V operating voltage ■ High speed TPD = 4.5 ns typ ■ Low DC power dissipation: 8 µA max ■ Symmetrical 24 mA outputs characteristics ■ High noise immunity: 28% of min VCC

EIA standards 783

Abstract: smd diode order marking code stmicroelectronics EIA 481-C bulk id EIA standards 763 EIA 763 IEC-60286-3 WLCSP flip chip WLCSP stencil design st smd diode marking code
Contextual Info: AN1235 Application note IPAD 500 µm Flip Chip: package description and recommendations for use Introduction This document provides package and usage recomendation information for 500 µm pitch Flip Chips. For information on 400 µm Flip Chips, see Application note AN2348.

st smd diode marking code

Contextual Info: STPS1045HR Aerospace 2 x 10 A - 45 V Schottky rectifier Features • Forward current: 2 x 10 A ■ Repetitive peak voltage: 45 V ■ Low forward voltage drop: 0.75 V ■ Maximum junction temperature: 175 °C ■ Negligible switching losses ■ Low capacitance

Contextual Info: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet − production data Features BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 2 3 1 TO-257 TO-39 2 3 • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

EIA 763

Abstract: AN2348 EIA standards 783 STMicroelectronics smd marking code WLCSP stencil design 10E12 10E4 10E8 AN1235 ANTISTATIC
Contextual Info: AN2348 Application note IPAD and ASD Application Specific Devices 400 µm Flip-Chip: Package description and recommendations for use Introduction This document provides package and usage recomendation information for 400 µm pitch Flip-Chips. For information on 500 µm FlipChips, see Application note AN1235.

EIA 763

Abstract: EIA-481-C EIA standards 783 underfill WLCSP stencil design 10E12 10E4 10E8 AN1235 AN2348
Contextual Info: AN1235 Application note IPAD and ASD Application Specific Devices 500 µm Flip-Chip: Package description and recommendations for use Introduction This document provides package and usage recomendation information for 500 µm pitch Flip-Chips. For information on 400 µm FlipChips, see Application note AN2348.