STMICROELECTRONICS POWER SWITCHING Search Results

MJE802

Contextual Info: MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN DARLINGTON APPLICATIONS GENERAL PURPOSE SWITCHING ■ DESCRIPTION The MJE802 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration,

D30NF03LT

Abstract: JESD97 STD30NF03LT STD30NF03LTT4 D30NF
Contextual Info: STD30NF03LT N-channel 30V - 0.017Ω - 30A - DPAK STripFET II Power MOSFET General features • Type VDSS RDS on ID STD30NF03LT 30V < 0.025Ω 30A Low threshold drive 3 1 Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature

JESD97

Abstract: N4NF03L STN4NF03L
Contextual Info: STN4NF03L N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A 2 Low threshold drive 1 Description 2 3 SOT-223 This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

STSR220

Contextual Info: STSR220 HIGH EFFICIENCY SWITCHED MODE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 200V VF(max) 0.8V FEATURES AND BENEFITS • ■ ■ ■ VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT

Contextual Info: ST2001HI  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS

Contextual Info: ST2310FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR • ■ ■ ■ ■ ■ NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS

BYV541V-200

Abstract: BYV541V BYV54V BYV54V-200
Contextual Info: BYV54V BYV541V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS

Schottky

Contextual Info: TMMBAT 42 TMMBAT 43 SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION General purpose, metal to silicon diodes featuring very low turn-on voltage fast switching. These devices have integrated protection against excessive voltage such as electrostatic discharges.

K2018

Abstract: ed2c
Contextual Info: SMBYT03 FAST RECOVERY RECTIFIER DIODES FEATURES VERY LOW REVERSE RECOVERY TIME VERY LOW SWITCHING LOSSES LOW NOISE TURN-OFF SWITCHING SURFACE MOUNT DEVICE s ct u d o r P e DESCRIPTION Single high voltage rectifier ranging from 200V to 400 V suited for Switch Mode Power Supplies and

BAR43/D95

Abstract: BAR43S BAR43 ordering marking db2 marking db2 bar43c BAR43A BAR43C BAR43A ST BAR43
Contextual Info: BAR 42 BAR 43, A, C, S  SMALL SIGNAL SCHOTTKY DIODES K A K1 N.C. A K2 BAR42/BAR43 BAR43A A1 K2 K A1 DESCRIPTION K1 A2 General purpose metal to silicon diodes featuring very low turn-on voltage and fast switching. A2 BAR43C BAR43S SOT-23 Plastic ABSOLUTE RATINGS (limiting values)

marking z52

Abstract: STPS0520Z STPS0520Z10K
Contextual Info: STPS0520Z SCHOTTKY RECTIFIERS MAIN PRODUCT CHARACTERISTICS IF AV 0.5 A VRRM 20 V VF (max) 0.32 V FEATURES AND BENEFITS • ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING DESCRIPTION Single Schottky rectifier suited for switch mode

S46 sot

Abstract: transistor s46 BAR46 BAR46A BAR46AFILM DIODE A46 A46 sot
Contextual Info: BAR46 BAR46AFILM  SMALL SIGNAL SCHOTTKY DIODES FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE K A K1 N.C. A K2 BAR46 BAR46A DESCRIPTION High voltage Schottky rectifier suited for SLIC protection during the card insertion operation.

6e sot23

Abstract: BAR18 BAS70-04 BAS70-05 BAS70-06
Contextual Info: BAR 18 BAS70-04 06 SMALL SIGNAL SCHOTTKY DIODES A1 K2 K K1 N.C. A2 A BAR18 BAS70-04 A K K1 A1 A2 K2 BAS70-06 BAS70-05 DESCRIPTION Low turn-on and high breakdown voltage diodes intended for ultrafast switching and UHF detectors in hybrid micro circuits.

DO41

Abstract: STTH106 STTH106RL
Contextual Info: STTH106 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600 V Tj (max) 175 °C VF (max) 1.25 V trr (max) 25 ns FEATURES AND BENEFITS • ■ ■ ■ Ultrafast switching Low reverse recovery current Reduces switching & conduction losses

0-K75

Abstract: 77120 L4971 L4971D SB360 SO16W
Contextual Info: L4971 1.5A STEP DOWN SWITCHING REGULATOR UP TO 1.5A STEP DOWN CONVERTER OPERATING INPUT VOLTAGE FROM 8V TO 55V PRECISE 3.3V ±1% INTERNAL REFERENCE VOLTAGE OUTPUT VOLTAGE ADJUSTABLE FROM 3.3V TO 50V SWITCHING FREQUENCY ADJUSTABLE UP TO 300KHz VOLTAGE FEEDFORWARD

Contextual Info: L6385 HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER HIGH VOLTAGE RAIL UP TO 600 V dV/dt IMMUNITY +- 50 V/nsec IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 400 mA SOURCE, 650 mA SINK SWITCHING TIMES 50/30 nsec RISE/FALL WITH 1nF LOAD CMOS/TTL SCHMITT TRIGGER INPUTS

L6598D

Abstract: L6598 Power supply L6598D ST L6561 TL431 L6598D013TR diode 5 amp
Contextual Info: L6598 HIGH VOLTAGE RESONANT CONTROLLER 1 • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 2 Figure 1. Packages FEATURES HIGH VOLTAGE RAIL UP TO 600V dV/dt IMMUNITY ±50V/ns IN FULL TEMPERATURE RANGE DRIVER CURRENT CAPABILITY: 250mA SOURCE 450mA SINK SWITCHING TIMES 80/40ns RISE/FALL WITH

2STN2540

Abstract: JESD97 N2540
Contextual Info: 2STN2540 Low voltage fast-switching PNP power bipolar transistor Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package

BULD39D

Abstract: BULD39D-1 BULD39DT4 JESD97
Contextual Info: BULD39D-1 BULD39DT4 High Voltage Fast-Switching NPN Power Transistor General features • NPN transistor ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ High ruggedness ■ Surface-mounting DPAK TO-252 power

FV4N150

Abstract: JESD97 STFV4N150
Contextual Info: STFV4N150 N-channel 1500V - 5Ω - 4A - TO-220FH Very high voltage PowerMESH Power MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching

N951

Abstract: JESD97 STN951
Contextual Info: STN951 Low voltage fast-switching PNP power transistor Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package

2STR1230

Abstract: 2STR2230 JESD97
Contextual Info: 2STR1230 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■

marking 3A sot-89

Abstract: marking 93 sot-89 marking 93, sot-89 2STF2360 2STN2360 JESD97 N2360 P025H marking codes transistors sot-223
Contextual Info: 2STF2360 2STN2360 Low voltage fast-switching PNP power transistors Features • Very low collector-emitter satuaration voltage ■ High current gain characteristic ■ Fast-switching speed ■ In Complance with the 2002/93/EC European Directive ■ Surface mounting devices in medium power

2STD1665

Abstract: 2STD1665-1 2STD1665T4 D1665 JESD97 power transistor Ic 4A NPN to - 251
Contextual Info: 2STD1665 Low voltage fast-switching NPN power transistor General features • Very low collector to emitter saturation volatage ■ High current gain characteristic fast-switching speed ■ Through-hole IPAK TO-251 power package in tube (suffix”-1”)