STH26 Search Results

Contextual Info: STH260N6F6-6 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-6 package Datasheet − preliminary data Features Order code VDSS RDS on max ID STH260N6F6-6 60 V < 2.4 mΩ 180 A • Low gate charge ■ Very low on-resistance

Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Preliminary data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

SC08010

Abstract: STH26N25 STH26N25FI
Contextual Info: 7 ^ 2 3 7 0045^35 173 « S G T H STH26N25 STH26N25FI SGS-THOMSON ^ SraOiDûS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 26N 25 STH 26N 25FI V d ss RDS(on Id 250 V 250 V < 0.11 n < 0 .1 1 n 26 A 16 A I . . . . . TYPICAL FtDS(on) = 0.085 Q AVALANCHE RUGGEDNESS TECHNOLOGY

Contextual Info: STH260N6F6-2 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet — production data Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 2.4 mΩ 180 A • Low gate charge ■ Very low on-resistance

STP260N6F6

Abstract: 260n6f6 STH260N6F6-2
Contextual Info: STH260N6F6-2 STP260N6F6 N-channel 60 V, 0.0016 Ω, 180 A TO-220, H2PAK-2 STripFET DeepGATE™ VI Power MOSFET Preliminary data Features Type VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A STP260N6F6 60 V < 0.003 Ω 120 A • N-channel enhancement mode

Contextual Info: STH260N6F6-6 N-channel 60 V, 1.7 mΩ typ., 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-6 package Datasheet - preliminary data Features Order code VDS RDS on max ID STH260N6F6-6 60 V 2.4 mΩ 180 A TAB • Low gate charge • Very low on-resistance

Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness

Contextual Info: STH260N6F6-2 N-channel 60 V, 0.0016 Ω, 180 A H²PAK-2 STripFET VI DeepGATE™ Power MOSFET Features Order code VDSS RDS on max ID STH260N6F6-2 60 V < 0.002 Ω 180 A • Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness TAB 2 3

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: STH360N4F6-2 N-channel 40 V, 180 A STripFET VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − preliminary data Features Order code VDSS RDS on max ID STH360N4F6-2 40 V < 1.25 mΩ 180 A(1) TAB 1. Current limited by package • 2 Low gate charge