STD9N Search Results

D9N10

Abstract: STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions
Contextual Info: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY

STP9NM60N

Abstract: STF9NM60 F9NM60N STD9NM60N STX9
Contextual Info: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N

Contextual Info: STD9N40M2 N-channel 400 V, 0.59 Ω typ., 6 A MDmesh II Plus low Qg Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max STD9N40M2 TAB 0.8 Ω 450 V ID 6A • Extremely low gate charge 1 3 • Lower RDS(on) x area vs previous generation

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE STD20N03L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.02 Ω 20 A (*) TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD9NM60T4

Abstract: STD9NM60 STD9NM60-1 STP9NM60 D9NM60 STP9NM
Contextual Info: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A

STD9NM60

Abstract: STD9NM60-1 STD9NM60T4 STP9NM60
Contextual Info: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK Zener-Protected MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω

STF9NM50N

Abstract: F9NM50N JESD97 STD9NM50N STD9NM50N-1 STP9NM50N
Contextual Info: STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STD9NM50N 550V <0.56Ω 7.5A STD9NM50N-1 550V <0.56Ω 7.5A 3 1

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD9N10

Contextual Info: STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE ST D9N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9 A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

9NM60N

Abstract: 9NM60 STF9NM60 STF9NM60N STD9NM60N STP9NM60N std9n
Contextual Info: STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh II Power MOSFET Features Order codes VDSS @Tjmax RDS(on) max. ID 3 3 STD9NM60N STF9NM60N 1 650 V < 0.745 Ω 2 1 TO-220 TO-220FP 6.5 A 2 STP9NM60N • 100% avalanche tested

STD9N10L

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE STD9N10L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9 A TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD9N10

Contextual Info: STD9N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.27 Ω 9A TYPICAL RDS(on) = 0.23 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: STD9N60M2, STP9N60M2, STU9N60M2 N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 3 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.78 Ω 5.5 A STD9N60M2

Contextual Info: SGSTHOMSON STD 9N 1o ULieraOôKêi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD9N10 V dss RDS on Id 100 V < 0.27 a 9A • . . . . . . ■ TYPICAL FtDS(on) = 0.23 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCH E TESTE D REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: STD9NM50N N-channel 500 V, 0.73 Ω, 5 A MDmesh II Power MOSFET in DPAK Features Order code VDSS@TJMAX RDS on max. STD9NM50N 550 V ID < 0.79 Ω 5A • 100% avalanche tested ■ Low input capacitances and gate charge ■ Low gate input resistance 3 1 DPAK

STD9N10L

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Q - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE V STD 20N 03L d s s 30 V R d Id S o ii < 0.02 Q. 20 A (*) . . . . . . . . TYPICAL RDs(on) = 0.22 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

STD9NM60N

Abstract: STF9NM60N JESD97 STD9NM60N-1 STP9NM60N F9NM60N P9NM60N
Contextual Info: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features VDSS @Tjmax Type RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N

STD9N10L

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A IPAK/DPAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD9N10L 100 V < 0.27 Ω 9A TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC HIGH CURRENT CAPABILITY

STP9NM40N

Abstract: std9nm40n
Contextual Info: STD9NM40N, STP9NM40N N-channel 400 V, 0.73 Ω typ., 5.6 A MDmesh II Power MOSFET in DPAK and TO-220 packages Datasheet — production data Features Order codes VDSS@TJMAX RDS on max. STD9NM40N STP9NM40N • 450 V ID < 0.79 Ω TAB 5.6 A TAB 100% avalanche tested

P9NM60

Contextual Info: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A

F9NM50N

Abstract: D9NM50N STF9NM50N STD9NM50N P9NM50N JESD97 STD9NM50N-1 STP9NM50N std9n
Contextual Info: STD9NM50N - STD9NM50N-1 STF9NM50N - STP9NM50N N-channel 500V - 0.47Ω - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STD9NM50N 550V <0.56Ω 7.5A STD9NM50N-1 550V <0.56Ω 7.5A 3 2

STD9NM60N

Abstract: STF9NM60N STP9NM60N P9NM60N STD9NM60N-1 F9NM60N VDD30-0 VDD480 STF9NM60
Contextual Info: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-CHANNEL 600V - 0.51Ω - 9A - TO220/TO-220FP/DPAK/IPAK SECOND GENERATION MDmesh MOSFET Target Specification Package General features VDSS Type @Tjmax RDS(on) ID 3 2 STD9NM60N STD9NM60N-1 STF9NM60N STP9NM60N

D9N10

Abstract: STD9N10 STD9N10-1 STD9N10T4 T432 airbag
Contextual Info: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY