STD90 Search Results

STD90N4F3

Abstract: STI90N4F3 STP90N4F3 STU90N4F3
Contextual Info: STD90N4F3, STI90N4F3 STP90N4F3, STU90N4F3 N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET III Power MOSFET Features Type • ■ VDSS RDS on max ID Pw STD90N4F3 40 V < 5.8mΩ 80 A 110 W STI90N4F3 40 V < 6.2 mΩ 80 A 110 W STP90N4F3

D90NH

Abstract: d90nh02l STD90NH02L-1 JESD97 STD90NH02L STD90NH02LT4
Contextual Info: STD90NH02L STD90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD90NH02L-1 24V <0.006Ω 60A(1) STD90NH02L 24V <0.006Ω 60A(1) 3 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark

Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small

TIP418

Abstract: T1P31C T1P32C tip120 to-220 npn darlington
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcEO NPN PNP V ST13005 ST13007 STD909T4 STD910T4 THD200FI THD215HI THD218DHI THD277HI TIP29A TIP29B TIP29C TIP30A TIP30B TIP30C TIP31A T1P31C TIP32A TIP32B TIP32C TIP33A TIP33C TIP34C TIP35C TIP36B TIP36C TIP41A

d90n02l

Abstract: D90N0 std90n02l JESD97 STD90N02L-1 diode GG 79 DC-DC converter 15V to 15V
Contextual Info: STD90N02L STD90N02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK - IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD90N02L 24V <0.006Ω 60A STD90N02L-1 24V <0.006Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

d90nh02l

Abstract: D90NH STD90NH02L STD90NH02L-1 STD90NH02LT4 mosfet D90NH02L diode C2
Contextual Info: STD90NH02L N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD90NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A(2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

pci ck16

Abstract: AO2222 ao32d4 FD6S FD2S AO322 ix 3394 ao21
Contextual Info: STD90/MDL90 0.35µm 3.3V CMOS Standard Cell Library for Pure Logic/MDL Products STD90/MDL90 0.35µm 3.3V CMOS Standard Cell Library for Pure Logic/MDL Products Data Book  2000 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

JESD97

Abstract: STD90N4F3 STP90N4F3 STU90N4F3 STD90
Contextual Info: STD90N4F3 STP90N4F3 - STU90N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET Features Type VDSS RDS on ID Pw STD90N4F3 40V <6.5mΩ 80A 110W STP90N4F3 40V <6.5mΩ 80A 110W STU90N4F3 40V <6.5mΩ 80A 110W • Standard threshold drive

D90N0

Abstract: d90n02l std90n02l JESD97 STD90N02L-1 diode 935 lg
Contextual Info: STD90N02L STD90N02L-1 N-channel 25V - 0.0052Ω - 60A - DPAK - IPAK STripFET III Power MOSFET Features Type VDSS RDS on Max ID STD90N02L 25V <0.006Ω 60A STD90N02L-1 25V <0.006Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

D90N03L

Contextual Info: STD90N03L STD90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD90N03L STD90N03L-1 30V 30V 0.0057Ω 0.0057Ω 80A (1) 80A (1) ) s ( ct 3 3 2 1. Pulse width limited by safe operating area

TO-252

Abstract: complementary npn-pnp BD909 BD910 STD909 STD910 complementary npn-pnp power transistors
Contextual Info: STD909 STD910 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO BD909 AND BD910 3 APPLICATIONS

TDA 5660 P

Abstract: sj 2258 PS 9829 WL 10-9123 tda 3377 TDA 5735 tda 7294 pci ck16 Q 371 Transistor TE 555-1 TDA 4920
Contextual Info: STD90/MDL90 0.35µm 3.3V CMOS Standard Cell Library for Pure Logic/MDL Products STD90/MDL90 0.35µm 3.3V CMOS Standard Cell Library for Pure Logic/MDL Products Data Book  2000 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior

Contextual Info: STD90NH02L N-CHANNEL 20V - 0.0052 Ω - 60A DPAK STripFET III POWER MOSFET TYPE STD90NH02L • ■ ■ ■ ■ ■ VDSS RDS on ID 20 V < 0.006 Ω 60 A(#) TYPICAL RDS(on) = 0.0052 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED

complementary npn-pnp

Contextual Info: r = j SGS-THOMSON HQ l@iLi g71(s iD©l STD909 STD910 COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX T4") . ELECTRICAL SIMILAR TO BD909 AND

ic 4510

Abstract: ST901T STD901T 4510 901T HIGH VOLTAGE NPN DARLINGTON st901 automotive ignition ST TAB 060
Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 3 1 High ruggedness electronic ignition for small

Contextual Info: STD90NH02L N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD90NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A(2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

D90N0

Abstract: D90N02L std90n02l STD90N02L-1 JESD97
Contextual Info: STD90N02L STD90N02L-1 N-channel 25V - 0.0052Ω - 60A - DPAK - IPAK STripFET III Power MOSFET Features Type VDSS RDS on Max ID STD90N02L 25V <0.006Ω 60A STD90N02L-1 25V <0.006Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

BUX98PI

Abstract: BUS08D T1P35C bux98p TP41A BUS08DFI BUF420AI Bo677A B0X54C BO677
Contextual Info: SELECTION GUIDE BY PACKAGE OPAK IPAK % DEVICE TYPE VcBO V ceO NPN PNP V MJD200T4 MJD3055T4 MJD31BT4 MJD44H11T4 STD909T4 IIJ m t2 T 4 MJD31CT4 «J012W 4 MJD47T4 MJ0340T4 MJD50T4 MJD210T4 MJD2955T4 MJD32BT4 MJ045H11T4 STD910T4 MJD32CT4 MJD127T4 MJD350T4 BULD118-1

STD90NH02L

Abstract: STD90NH02L-
Contextual Info: STD90NH02L N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD90NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A(2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

complementary npn-pnp

Contextual Info: STD909 STD910 COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO BD909 AND BD910 APPLICATIONS GENERAL PURPOSE SWITCHING AND

Contextual Info: STD90NH02L N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD90NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A(2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

STD910

Abstract: NPN Silicon Power Transistor DPAK BD909 BD910 STD909
Contextual Info: STD909 STD910  COMPLEMENTARY SILICON POWER TRANSISTORS • ■ ■ ■ ST PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES SURFACE-MOUNTING TO-252 DPAK POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) ELECTRICAL SIMILAR TO BD909 AND BD910 3 APPLICATIONS

D90N03L-1

Abstract: D90N03L D90N0 STD90N03L STD90N03L-1 D90N03 JESD97
Contextual Info: STD90N03L STD90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD90N03L STD90N03L-1 30V 30V 0.0057Ω 0.0057Ω 80A (1) 80A (1) 3 3 2 1. Pulse width limited by safe operating area • RDS(on)*Qg industry’s benchmark

D90NH

Abstract: d90nh02l D90NH02 d90n JESD97 STD90NH02L STD90NH02L-1 STD90NH02LT4 STD90
Contextual Info: STD90NH02L STD90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD90NH02L-1 24V <0.006Ω 60A(1) STD90NH02L 24V <0.006Ω 60A(1) 3 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark