D90N Search Results

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Contextual Info: 西普电气网站-产品详细资料 -=> 产品总汇 >>电感式 >>电感式 - 矮圆柱型>> 矮圆柱型>>E210 >>E210M -D90NK >> E210 系列接近开关 >>E210M 浏览次数：5 页码 1/1 会员价: 欲知价格请登陆 主要技术参数 -=> 产品图片

D90NH

Contextual Info: 西普电气网站-产品详细资料 -=> 产品总汇 >>电感式 >>电感式 - 矮圆柱型>> 矮圆柱型>>E210 >>E210M -D90NH >> E210 系列接近开关 >>E210M 浏览次数：5 页码 1/1 会员价: 欲知价格请登陆 主要技术参数 -=> 产品图片

D90NH

Abstract: d90nh02l STD90NH02L-1 JESD97 STD90NH02L STD90NH02LT4
Contextual Info: D90NH02L D90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID D90NH02L-1 24V <0.006Ω 60A(1) D90NH02L 24V <0.006Ω 60A(1) 3 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark

D15BU101

Abstract: DiCap D35BH101 D70Bh D12NV8R2 D10NR0R7 D12NR1R0 D12BU68 D20BU101 MIL-C-49464
Contextual Info: DICAP ® dielectric laboratories High performance single layer ceramic capacitors for RF and Microwave and Millimeter Wave applications. Part Number D 15 BU 101 K 5 P X Product Code Test Code Size Code Termination Code Material Code Voltage Rating/ Thickness Code

d90n02l

Abstract: D90N0 std90n02l JESD97 STD90N02L-1 diode GG 79 DC-DC converter 15V to 15V
Contextual Info: D90N02L D90N02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK - IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID D90N02L 24V <0.006Ω 60A D90N02L-1 24V <0.006Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

d90nh02l

Abstract: D90NH STD90NH02L STD90NH02L-1 STD90NH02LT4 mosfet D90NH02L diode C2
Contextual Info: D90NH02L N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE D90NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A(2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

D90N0

Abstract: d90n02l std90n02l JESD97 STD90N02L-1 diode 935 lg
Contextual Info: D90N02L D90N02L-1 N-channel 25V - 0.0052Ω - 60A - DPAK - IPAK STripFET III Power MOSFET Features Type VDSS RDS on Max ID D90N02L 25V <0.006Ω 60A D90N02L-1 25V <0.006Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

D90N03L

Contextual Info: D90N03L D90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID D90N03L D90N03L-1 30V 30V 0.0057Ω 0.0057Ω 80A (1) 80A (1) ) s ( ct 3 3 2 1. Pulse width limited by safe operating area

56 pF CH

Abstract: NDS8858H cft 455 f
Contextual Info: J u ly 1 9 9 6 N a t io n a l S e m ic o n d u c to r” NDS8858H Complementary MOSFET Half Bridge General Description Features These C o m plem e n ta ry MOSFET half b ridge devices are produced using N ational's proprietary, hig h cell density, DMOS tech no lo g y. T his very

D90N0

Abstract: D90N02L std90n02l STD90N02L-1 JESD97
Contextual Info: D90N02L D90N02L-1 N-channel 25V - 0.0052Ω - 60A - DPAK - IPAK STripFET III Power MOSFET Features Type VDSS RDS on Max ID D90N02L 25V <0.006Ω 60A D90N02L-1 25V <0.006Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

D90N03L-1

Abstract: D90N03L D90N0 STD90N03L STD90N03L-1 D90N03 JESD97
Contextual Info: D90N03L D90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID D90N03L D90N03L-1 30V 30V 0.0057Ω 0.0057Ω 80A (1) 80A (1) 3 3 2 1. Pulse width limited by safe operating area • RDS(on)*Qg industry’s benchmark

D90NH

Abstract: d90nh02l D90NH02 d90n JESD97 STD90NH02L STD90NH02L-1 STD90NH02LT4 STD90
Contextual Info: D90NH02L D90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID D90NH02L-1 24V <0.006Ω 60A(1) D90NH02L 24V <0.006Ω 60A(1) 3 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark