STD9 Search Results

95N3LLH6

Abstract: 95n3l STP95N3LLH6 STB95N3LLH6 STD95N3LLH6 152-28 15228 STD95N3L
Contextual Info: STB95N3LLH6, STD95N3LLH6 STP95N3LLH6, STU95N3LLH6 N-channel 30 V, 0.0037 Ω , 80 A, D2PAK, DPAK, IPAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID 30 V 0.0042 Ω STD95N3LLH6 30 V 0.0042 Ω 80 A STP95N3LLH6 30 V 0.0042 Ω

STD90N4F3

Abstract: STI90N4F3 STP90N4F3 STU90N4F3
Contextual Info: STD90N4F3, STI90N4F3 STP90N4F3, STU90N4F3 N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET III Power MOSFET Features Type • ■ VDSS RDS on max ID Pw STD90N4F3 40 V < 5.8mΩ 80 A 110 W STI90N4F3 40 V < 6.2 mΩ 80 A 110 W STP90N4F3

STD96N3LLH6

Abstract: 96n3llh6
Contextual Info: STD96N3LLH6 N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STD96N3LLH6 30 V 0.0042 Ω 80 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness

95n4f

Abstract: STP95N4F3 95n4f3 STD95N4F3 JESD97 STU95N4F3
Contextual Info: STD95N4F3 STP95N4F3 - STU95N4F3 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 - IPAK STripFET Power MOSFET General features Type VDSS RDS on ID Pw STD95N4F3 40V <6.5mΩ 80A 110W STP95N4F3 40V <6.5mΩ 80A 110W STU95N4F3 40V <6.5mΩ 80A 110W • Standard threshold drive

D9N10

Abstract: STD9N10 STD9N10-1 STD9N10T4 DPak Package dimensions
Contextual Info: STD9N10 STD9N10-1 N-CHANNEL 100V - 0.23 Ω - 9A DPAK/IPAK POWER MOS TRANSISTOR Table 1. General Features Figure 1. Package Type VDSS RDS on ID STD9N10 100 V < 0.27 Ω 9A STD9N10-1 100 V < 0.27 Ω 9A FEATURES SUMMARY • TYPICAL RDS(on) = 0.23 Ω ■ AVALANCHE RUGGED TECHNOLOGY

D90NH

Abstract: d90nh02l STD90NH02L-1 JESD97 STD90NH02L STD90NH02LT4
Contextual Info: STD90NH02L STD90NH02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK/IPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD90NH02L-1 24V <0.006Ω 60A(1) STD90NH02L 24V <0.006Ω 60A(1) 3 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark

pnp 500v

Abstract: STD93003 STD83003
Contextual Info: STD93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ REVERSE PINS OUT Vs STANDARD IPAK TO-251 / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

95n3l

Abstract: STD95N3LLH6-H STD95N3LLH6 ecopack2 95N3LLH6
Contextual Info: STD95N3LLH6-H N-channel 30 V, 0.0037 Ω , 80 A, DPAK STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max. ID STD95N3LLH6-H 30 V 0.0042 Ω 80 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness

STP9NM60N

Abstract: STF9NM60 F9NM60N STD9NM60N STX9
Contextual Info: STD9NM60N - STD9NM60N-1 STP9NM60N - STF9NM60N N-channel 600V - 0.47Ω - 9A - TO-220 /FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 STD9NM60N 650V <0.51Ω 9A STD9NM60N-1 650V <0.51Ω 9A STF9NM60N

Contextual Info: ST901T STD901T High voltage NPN Darlington transistor for ignition coil Features • High voltage special Darlington structure ■ Very rugged bipolar technology ■ High DC current gain TAB TAB 3 1 Application ■ DPAK 1 High ruggedness electronic ignition for small

STD83003

Abstract: STD93003
Contextual Info: STD93003  HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR • ■ ■ ■ ■ ■ ■ REVERSE PINS OUT Vs STANDARD IPAK TO-251 / DPAK (TO-252) PACKAGES MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

95N2LH5

Abstract: JESD97 STD95N2LH5 STU95N2LH5 ST 95N2LH5 smd diode marking b6
Contextual Info: STD95N2LH5 STU95N2LH5 N-channel 25 V - 0.0038 Ω - 80 A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on ID STD95N2LH5 25 V <0.0045 Ω 80 A STU95N2LH5 25 V <0.0049 Ω 80 A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

TIP418

Abstract: T1P31C T1P32C tip120 to-220 npn darlington
Contextual Info: SELECTION GUIDE BY PART NUMBER DEVICE TYPE VcEO NPN PNP V ST13005 ST13007 STD909T4 STD910T4 THD200FI THD215HI THD218DHI THD277HI TIP29A TIP29B TIP29C TIP30A TIP30B TIP30C TIP31A T1P31C TIP32A TIP32B TIP32C TIP33A TIP33C TIP34C TIP35C TIP36B TIP36C TIP41A

STD95N4LF3

Abstract: 95N4L
Contextual Info: STD95N4LF3 N-channel 40 V, 5.0 mΩ, 80 A DPAK STripFET Power MOSFET Features Type VDSS RDS on max STD95N4LF3 40 V < 6.0 mΩ ID PD 80 A(1) 110 W 3 1. Value limited by wire bonding • 100% avalanche tested ■ Logic level drive 1 DPAK Applications ■

STD95NH02LT4

Abstract: D95NH02L STD95NH02L
Contextual Info: STD95NH02L N-CHANNEL 24V - 0.0039Ω - 80A DPAK ULTRA LOW GATE CHARGE STripFET MOSFET Table 1: General Features TYPE STD95NH02L • ■ ■ Figure 1: Package VDSS RDS on ID 24 V < 0.005Ω 80(*) A TYPICAL RDS(on) = 0.0039Ω @ 10 V CONDUCTION LOSSES REDUCED

d90n02l

Abstract: D90N0 std90n02l JESD97 STD90N02L-1 diode GG 79 DC-DC converter 15V to 15V
Contextual Info: STD90N02L STD90N02L-1 N-channel 24V - 0.0052Ω - 60A - DPAK - IPAK STripFET III Power MOSFET General features Type VDSS RDS on ID STD90N02L 24V <0.006Ω 60A STD90N02L-1 24V <0.006Ω 60A • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced

STD95N4LF3

Abstract: STB95N4LF3 95N4LF3 95N4L
Contextual Info: STB95N4LF3 STD95N4LF3 N-channel 40 V, 5.0 mΩ, 80 A DPAK, D2PAK STripFET III Power MOSFET Features RDS on max ID Type VDSS STD95N4LF3 40 V < 6.0 mΩ 80 A(1) 110 W STB95N4LF3 (2) 40 V < 6.0 mΩ 80 A PD 110 W 3 1. Value limited by wire bonding 100% avalanche tested

JESD97

Abstract: STD95N04 STP95N04
Contextual Info: STD95N04 STP95N04 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features • ■ Type VDSS RDS on ID Pw STD95N04 40V <6.5mΩ 80A 110W STP95N04 40V <6.5mΩ 80A 110W Standard threshold drive 3 1 100% avalanche tested DPAK

Contextual Info: STD9N10L N - CHANNEL 100V - 0.22Ω - 9A - IPAK/DPAK POWER MOS TRANSISTOR TYPE STD20N03L • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 30 V < 0.02 Ω 20 A (*) TYPICAL RDS(on) = 0.22 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: STD95N04 N-CHANNEL 40V - 5.1mΩ - 80A DPAK Planar STripFET MOSFET TARGET SPECIFICATION Table 1: General Features TYPE STD95N04 • ■ ■ Figure 1: Package VDSS RDS on ID Pw 40 V < 6.5 mΩ 80 A (*) 110 W 100% AVALANCHE TESTED SURFACE-MOUNTING DPAK (TO-252)

d90nh02l

Abstract: D90NH STD90NH02L STD90NH02L-1 STD90NH02LT4 mosfet D90NH02L diode C2
Contextual Info: STD90NH02L N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK STripFET III POWER MOSFET TYPE STD90NH02L • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A(2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK

JESD97

Abstract: STD95N04 STP95N04
Contextual Info: STD95N04 STP95N04 N-channel 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET Power MOSFET General features • ■ Type VDSS RDS on ID Pw STD95N04 40V <6.5mΩ 80A 110W STP95N04 40V <6.5mΩ 80A 110W Standard threshold drive 3 3 1 100% avalanche tested 1 TO-220

STD9NM60T4

Abstract: STD9NM60 STD9NM60-1 STP9NM60 D9NM60 STP9NM
Contextual Info: STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK MDmesh Power MOSFET TARGET DATA TYPE STP9NM60 STD9NM60 STD9NM60-1 • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A

pci ck16

Abstract: AO2222 ao32d4 FD6S FD2S AO322 ix 3394 ao21
Contextual Info: STD90/MDL90 0.35µm 3.3V CMOS Standard Cell Library for Pure Logic/MDL Products STD90/MDL90 0.35µm 3.3V CMOS Standard Cell Library for Pure Logic/MDL Products Data Book  2000 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior