STD17 Search Results

Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

8002 amplifier

Abstract: KST-8002-001 TRANSISTOR 10003 STB1188 STD1766 kst80
Contextual Info: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766

Contextual Info: 51 GEC PLESSEY PR ELIM IN A R Y INFO R M ATIO N S E M I C O N D U C T O R S DS3748-4 2 MA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The GEC Plessey MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and

1313L1

Abstract: STD17N25 STF17N25
Contextual Info: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω

Contextual Info: MARCH 1995 MA31750 DS3748-6.5 MA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The GEC Plessey MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and

17NF25

Abstract: 17NF2 STI17NF25 STP17NF25 STD17NF25 STF17NF25 st 393 JESD97 17nf25 data
Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

MA31750 processor architecture

Abstract: D100D MA31750 D200D 1750A processor architecture MA31750 architecture mil-std-1750 nte 4006 MAS281 MIL-STD-1750* BX
Contextual Info: MA31750 MA31750 High Performance MIL-STD-1750 Microprocessor Replaces July 2002 version, DS3748-8.1 DS3748-8.2 Feb 2006 LN24435 The Dynex Semiconductor MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and

STD17N25

Abstract: STP17N25 STF17N25 330EP P17N25 STB17N25-1
Contextual Info: STB17N25-1 - STD17N25 STF17N25 - STP17N25 N-CHANNEL 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK LOW GATE CHARGE STripFET II Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID PTOT STD17N25 250V < 0.165Ω 17A 90W 3 1 STP17N25 250V < 0.165Ω

17NF25

Abstract: 17NF2 17nf25 data 17nF DSA0067465 STD17NF25 STI17NF25 STF17NF25 STP17NF25
Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

17NF2

Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

SOT89 MARKING CODE B2

Abstract: STD1766 STB1188
Contextual Info: ㅇ STD1766 NPN Silicon Transistor Descriptions • Medium power amplifier PIN Connection Features • PC Collector power dissipation =2W (Ceramic substrate of 250 ㎟x0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188

Contextual Info: STB1188 Semiconductor PNP Silicon Transistor Description • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=-0.5V(Typ.) • Complementary pair with STD1766

Contextual Info: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188

17N06L

Contextual Info: £ jï S G S -1H 0 M S 0 N ULKgraMOeS S T D 17N0 5 L S T D 17N0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.0 8 5 Q. 17 A STD17N06L 60 V < 0.0 8 5 Q. 17 A • . . . . . . . TYPICAL RDS(on) = 0.065 £2

transistor A4t 85

Contextual Info: S G S -T H O M S O N S T D 1 7 N 0 5 L r a n c œ iiiL iC T iû iia D e i S T D 1 7 N 0 6 L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V dss RDS on Id STD17N05L 50 V < 0.085 Û 17 A STD17N06L 60 V < 0.085 Q 17 A TYPICAL RDS(on) = 0.065 D,

Contextual Info: P B t i GEC plessey PRELIMINARY INFORMATION DS3748-2.2 June 1993 JMA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The G EC P le s s e y M A 31 750 is a s in g le -c h ip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and

17N06

Contextual Info: ¿57 S G S -T H O M S O N ¡m e ra « S T D 17N05 S T D 17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss R DS on Id STD17N05 50 V < 0.085 Q. 17 A STD17N06 60 V < 0.085 Q. 17 A • TYPICAL RDS(on) = 0.06 Q . . AVALANCHE RUGGED TECHNOLOGY

STB1188

Abstract: STD1766
Contextual Info: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector dissipation =2W (Ceramic substate of 40x40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188

STD17N05L

Abstract: STD17N06L
Contextual Info: STD17N05L STD17N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD17N05L 50 V < 0.085 Ω 17 A STD17N06L 60 V < 0.085 Ω 17 A TYPICAL RDS(on) = 0.065 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

STD17NE03L

Contextual Info: STD17NE03L N - CHANNEL 30V - 0.034Ω - 17A - DPAK/IPAK STripFET POWER MOSFET TYPE STD17NE03L V DSS R DS on ID 30 V < 0.05 Ω 17 A TYPICAL RDS(on) = 0.034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

MA31750 processor architecture

Abstract: nte 4006 MA31750 CMOS 4002 l7 723 M/A MIL-STD-1750B mil-std-1750a ttl nim a006 GNDA15
Contextual Info: MA31750 MA31750 High Performance MIL-STD-1750 Microprocessor Replaces July 1999 version, DS3748-7.0 DS3748-8.0 January 2000 The Dynex Semiconductor MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and

STD17N05

Abstract: STD17N06
Contextual Info: STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

STD1766

Abstract: Transistor B2 SOT-89 STB1188
Contextual Info: STD1766 Semiconductor NPN Silicon Transistor Descriptions • Medium power amplifier Features • PC Collector power dissipation =2W (Ceramic substate of 40x40×0.8 ㎜ used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188

Contextual Info: PACE 1757M/ME COMPLETE EMBEDDED CPU SUBSYSTEM 4 -FFATURES Implements complete MIL-STD-1750A ISA Including optional MMU, MFSR, and BPU functions. • Programmable address wait states. • Sixteen levels of interrupts are provided per MIL-STD1750A. Interrupts can be either edge- or level-sensitive