STATIC RAM 64KX8 Search Results

Contextual Info: _EDI8M864C m o i Electronic D«*lgn> Inc. High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory

static ram 64kx8

Abstract: EDI8M864C
Contextual Info: 23EDI EDI8M864C Electronic D«tigna Inc. • High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM 64Kx8 bit CMOS Static based on two 32Kx8 Static RAMs in leadless chip Random Access Memory carriers mounted on a multi-layered ceramic substrate.

EDI8M864C

Abstract: TT323
Contextual Info: MD\ EDI8M864C90/100/120/150 High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM based on two 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic substrate. The EDI8M864C has an on-board decoder circuit that

static ram 64kx8

Contextual Info: m o EDI8M864C90/100/120/150 i High Performance 512K SRAM Module 64Kx8 Static RAM CMOS, Module Features The EDI8M864C is a 512K bit CMOS Static RAM based on two 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic substrate. The EDI8M864C has an on-board decoder circuit that

Contextual Info: 128K/64K x 8 CMOS DUAL-PORT STATIC RAM MODULE PRELIMINARY IDT7MP1021 IDT7MP1023 Integrated Device Technology, Inc. FEATURES DESCRIPTION: • High density 1M /512K C M O S dual-port static RAM modules • Fast access times: 25, 30, 35, 40, 50ns • Fully asynchronous read/write operation from either port

004II

Abstract: a1215 KM68U512ALE-L KM68U512ALTGE-8L
Contextual Info: KM68V512A, KM68U512A Family_ CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64 K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V

64Kx8 CMOS RAM

Abstract: K6L0908C2A K6L0908C2A-B K6L0908C2A-F K6L0908C2A-L K6L0908C2A-P
Contextual Info: K6L0908C2A Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft Novemer 28, 1993 Design target 0.1 Revision May 13, 1994 Preliminary 1.0 Finalize December 1, 1994 Final 2.0 Revision

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A family : 3.3V +/- 0.3V KM68U512A family : 3.0V +/- 0.3V

TSOP 87

Contextual Info: K6L0908V2A, K6L0908U2A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.

Contextual Info: KM68512A Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft Novem er 28th 1993 Design target 0.1 Revision May 13th 1994 Preliminary 1.0 Finalize December 1st 1994 Final

A2ND

Abstract: KM68U512 SRAM 64KX8 5V KM68U512ALE-L KM68U512ALG-10L 00E3b
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM 64Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.6 urn CMOS • Organization : 64K x 8 • Power Supply Voltage KM68V512A fam ily: 3.3V +/- 0.3V KM68U512A fam ily: 3.0V +/- 0.3V

KM68V512ALTE-10L

Abstract: 64Kx8 CMOS RAM KM68U512ALE-L
Contextual Info: KM68V512A, KM68U512A Family CMOS SRAM Document Title 64Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target January 17, 1996 Advance 0.1 Initial draft - One datasheet for commercial, extended and industrial product.

Contextual Info: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CMOS) : 550^W(Max.)L-Ver.

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM68512A family is fabricated by SAMSUNG'S • Organization : 64K x8 advanced CMOS process technology. The family • Power Supply Voltage : Single 5V +/-10%

Contextual Info: KM68512L/L-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 55,70,85 ns max. • Low Power Dissipation Standby (CMOS): 550jiW (max.) L Version 110nW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power S upply

Contextual Info: KM68512B Family CMOS SRAM Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Initial draft January 10th 1998 Advance The attached datasheets are prepared and approved by SAM SUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

8512A

Abstract: A12C A15C KM68512A KM68512AL KM68512ALI KM68512ALI-L KM68512AL-L A2ND
Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The KM 68512A fam ily is fabricated by SAM SUNG'S advanced CM O S process technology. The fam ily can support various operating tem perature ragnges

Contextual Info: KM68512A Family CMOS SRAM 64Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.6» • CMOS Organization : 64Kx8 - Power Supply Voltage : Single 5V • • 10% •• Low Data Retention Voltage : 2V Min ~ Three state output and TTL Compatible

KM6651

Abstract: cs250 KM68512ALI SRAM 64KX8 5V
Contextual Info: KM68512ALI / ALI-L CMOS SRAM 64Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 8 5 “C • Fast Access Time : 70,100 ns{Max. • Low Power Dissipation Standby C M O S ): 550^W(Max.)L-Ver.

64Kx8 CMOS RAM

Abstract: KM68512BLT-5L KM68512B KM68512BLI-L KM68512BL-L KM68512BLT-7L KM68512BLTI-7L
Contextual Info: Advance CMOS SRAM KM68512B Family Document Title 64Kx8 bit Low Power CMOS Static RAM Revision History Revision No. 0.0 History Draft Data Remark Initial draft January 10th 1998 Advance The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right

Contextual Info: CMOS SRAM KM68512AL / AL-L 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|xW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

SRAM 64Kx8

Abstract: 64Kx8 CMOS RAM KM68512AL
Contextual Info: KM68512AL / AL-L CMOS SRAM 64Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 55,70 ns max. • Low Power Dissipation Standby (CMOS): 550|iW (max.) L Version 110|iW (max.) LL Version Operating : 385mW (max.) • Single 5V±10% Power Supply