STATIC RAM 2149 Search Results

Contextual Info: CY7C18S CYPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 15 ns The CY7C185 is a high-performance CMOS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LOW chip enable CEi , an active HIGH chip enable (CE2),

V62C2804096

Contextual Info: MOSEL VITELIC PRELIMINARY V62C2804096 512K X 8, CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C2804096 is a very low power CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW CE1, and active HIGH CE2, an active LOW

V62C1804096

Contextual Info: MOSEL VITELIC PRELIMINARY V62C1804096 512K X 8, CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C1804096 is a very low power CMOS static RAM organized as 524,288 words by 8 bits. Easy memory expansion is provided by an active LOW CE1, and active HIGH CE2, an active LOW

Contextual Info: CY7C185 ^ CYPRESS 8K x 8 Static RAM F e a tu re s F u n c tio n a l D escrip tio n • High speed — 15 ns The CY7C185 is a high-performance CM OS static RAM organized as 8192 words by 8 bits. Easy memory expansion is provided by an active LO W chip enable

2148 ram

Abstract: nmos static ram 2149 static ram
Contextual Info: Am2148/2149 1024 x 4 Static RAM High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148 TTL-compatible interface levels • • Low power dissipation - Am2148: 990 mW active, 165 mW power down

AM2149

Abstract: AM2148 AM2149-35 AM21L48-45 AM21L48-55 AM21L49-45 AM21L49-55 nmos static ram AM21L48-70 AM2148-55
Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 1024x4 Static RAM DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fuily static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels

S-22S12I

Abstract: S-22S12R X2212 seiko s22s
Contextual Info: S-22S12R/I 256-word x4-bit parallel NON-VOLATILE RAM The S-22S12R/I is a non-volatile CMOS RAM, com posed of a CMOS static RAM and a non-volatile electrically erasable programmable memory E2PROM to backup the SRAM. The organization is 256-word x 4-bit (total 1024 bits) and

V62C21164096

Contextual Info: MOSEL VITELIC PRELIMINARY V62C21164096 256K x 16, 0.20 µm CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C21164096 is a 4,194,304-bit static random-access memory organized as 262,144 words by 16 bits. Inputs and three-state outputs are

Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 w,a£ 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • High speed — access times as fast as 35 ns Fully static storage and interface circuitry Automatic power-down when deselected Am2148 TTL-compatible interlace levels

V62C2164096

Contextual Info: MOSEL VITELIC PRELIMINARY V62C2164096 256K x 16, 0.17 µm CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C2164096 is a 4,194,304-bit static random-access memory organized as 262,144 words by 16 bits. Inputs and three-state outputs are

AM2149

Abstract: IG 03210 AM2148 AM2148-35 AM2149-35 AM21L48-45 AM21L48-55 AM21L48-70 AM21L49-45 AM21L49-55
Contextual Info: Am2148/Am2149 L Am21 L48/Am21 L49 AdvS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • • High speed — access tim es as fast as 35 ns Fully static storage and interface circuitry Autom atic power-down when deselected Am2148 TTL-compatible interface levels

V62C1164096

Abstract: ttl 7032
Contextual Info: MOSEL VITELIC PRELIMINARY V62C1164096 256K x 16, CMOS STATIC RAM Features Description • ■ ■ ■ ■ ■ ■ ■ The V62C1164096 is a 4,194,304-bit static random-access memory organized as 262,144 words by 16 bits. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with

tda 6609 cl

Abstract: Z80 RAM data sheet TI 2905 tda 6609 wait state generator Z84C00 Z84C50 Z84COO
Contextual Info: PRELIMINARY PRODUCT SPECIFICATION 3 > Z i I i 3 G Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State G enerator for external memory ■ ■ Low pow er consum ption TBD Typ (5V.10 MHz under RUN mode)

Contextual Info: <£ZiIi3G Pr e l im in a r y p r o d u c t S p ec ific a tio n Z84C50 J une 1989 Z80 RAM 80 Z80 CPU/2K SRAM FEATURES • Z80 CPU 2K Static RAM ■ Powerful set of 158 instructions ■ Wait State Generator for external memory ■ Power Interrupt function _

231369

Abstract: 2148H 2149H 2149H-1 2149H-2 2149H-3 2149HL
Contextual Info: 2149H 1024 x 4-BIT STATIC RAM Max. Address Access Time ns Max. Chip Select Access Time (ns) 2149H-1 2149H-2 2149H-3 2149H 2149HL 35 45 55 70 70 20 25 30 30 150 150 125 20 150 150 Max. Active Current (mA) Common Data input and Output Improved Performance Margins

2148H

Abstract: 150a gto 2149H 2149H-2 2149H-3 2149HL 2149HL-3
Contextual Info: intèf 2149H 1024 x 4-BIT STATIC RAM 2149H-3 2149H-2 Max. Address Access Time ns Max. Chip Select Access Time (ns) Max. Active Current (mA) 45 20 Fast Chip Select Access Time—20ns Maximum 2149HL-3 2149HL 70 70 55 25 30 25 30 125 125 180 180 2149H 55 180

IC 2148

Abstract: 21L49 CY2149 2148 static ram 21l48
Contextual Info: CY2148/CY21L48 CY2149/CY21L49 CYPRESS SEMICONDUCTOR 1,024 x 4 Static R/W RAM Functional Description Features Automated power-down when dese­ lected 2148 CMOS for optimum speed/power Low power — 660 mW (commercial) — 770 mW (military) 5-volt power supply ± 10% tolerance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54402A Advance Information 1M x 4 CMOS Dynamic RAM Static Column N PACKAGE 300-MIL SOJ CASE 822 The MCM54402A is a 0.7|i CMOS high-speed, dynamic random access memory. It is organized as 1,048,576 four-bit words and fabricated with

C104A

Abstract: C104A-0
Contextual Info: CY7C164A CY7C166A CYPRESS SEMICONDUCTOR Features 16,384 x 4 Static R/W RAM Functional D escription I/0 3 is written into the memory location specified on the address pins Ao through Au). Reading the device is accomplished by taking chip enable (CE) LOW (and OE LOW for

2148 static ram

Contextual Info: Am2148/Am2149 Am21 L48/Am21 L49 L Adv mS 1024x4 Static RAM Devices DISTINCTIVE CHARACTERISTICS • • • • Low power dissipation - Am2148: 990 mW active, 165 mW power down - Am21L48: 688 mW active, 110 mW power down High output drive - Up to seven standard TTL loads

Contextual Info: CY7C164A CY7C166A 16,384 x 4 Static R/W RAM CYPRESS SEMICONDUCTOR Features • Automatic power-down when deselected • Output Enable OE feature (7C166A) • CMOS for optimum speed/power • High speed - 15 ns t*A • Low active power - 550 mW • Low standby power

2148H

Contextual Info: in t e i 2149H 1024 x 4-BIT STATIC RAM 2149H 2149H-2 2149H-3 Max. Address Access Time ns 45 55 70 70 Max. Chip Select Access Time (ns) 20 25 30 30 180 180 180 125 Max. Active Current (mA) Fast Chip Select Access Time— 20ns Maximum 2149HL High Density 18-Pin Package

2149 RAM

Abstract: 18-PIN 21493 2149 static ram
Contextual Info: MOS LSI T M S 2149 JL, AIL, FPL FAST 1024-W 0R D BY 4 -B IT STATIC RAM ^ _JANUARY 1982 - REVISED MAY 1982 TM S 2149 18-PIN PLASTIC A N D C E RA M IC D U A L -IN -L IN E PACKAGES 1024 X 4 Organization • TOP VIEW S in gle+5 V Supply (±10% Tolerance)

intel 2148H

Abstract: INTEL 3214 2148H 2149H intel 3212 2148 static ram
Contextual Info: 2148H FAMILY 1024 x 4 BIT STATIC RAM ^iU M O IÎM Y •2148H-2 2148H-3 2148H ‘ 2148HL-3 2148HL Max. Access Time ns 45 55 70 55 TO Max. Active Current (mA) 150 *150 *150 125 125 Max. Standby Current (mA) 30 30 30 20 20 • Improved Performance Margins ■ HMOS* III Technology