ST MICROELECTRONICS TRANSISTORS Search Results

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

ZT2222A

Abstract: T2222 ST Microelectronics Transistors ZT2222 T2222A STZT2222 STZT2222A STZT2907 STZT2907A
Contextual Info: STZT2222 STZT2222A MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

ZT2907A

Abstract: T2907A st 2222A ZT2907 T2907 STZT2222 STZT2222A STZT2907 STZT2907A ST Microelectronics Transistors
Contextual Info: STZT2907 STZT2907A MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

T5400

Contextual Info: STZT5400 STZT5401 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

ZT5550

Abstract: ZT5551 st 5551
Contextual Info: STZT5550 STZT5551 MEDIUM POWER AMPLIFIER ADVANCE DATA n n n n SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE MAINLY INTENDED FOR USE IN MEDIUM POWER INDUSTRIAL APPLICATION AND FOR AUDIO AMPLIFIER

st microelectronics ld

Abstract: RF Transistors 1030 MHz
Contextual Info: w # S G S -TH O M S O N V#@ [MOTOlHLtlOMiDtgi_ SD1530-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 40 WATTS typ. IFF 1030 - 1090 MHz . 35 WATTS (min.) DME 1025 - 1150 MHz

H5NA90FI

Abstract: W5NA90 H5NA90F h5na90 W5NA STW5NA90 STH5NA90FI
Contextual Info: STW5NA90 STH5NA90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE ST W5NA90 ST H5NA90F I • ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 2.5 Ω < 2.5 Ω 5.3 A 3.5 A TYPICAL RDS(on) = 2.1 Ω ± 30 V GATE-TO-SOURCE VOLTAGE

W7NA100

Abstract: h7na100fi STH7NA100FI STW7NA100 W7NA o247
Contextual Info: STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID ST W7NA100 ST H7NA100FI 1000 V 1000 V < 1.7 Ω < 1.7 Ω 7 A 4.3 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: di S G S -T H O M S O N RflD B»ilL[lCTK KlölE STW7N A100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss RoS(on Id STW7NA100 STH7NA100FI 1000 V 1000 V < 1 .7 0 < 1.7 n 7A 4.3 A • . . ■ . ■ TYPICAL Ros(on) = 1.45 Q ± 30V GATE TO SOURCE VOLTAGE RATING

H5NA100FI

Abstract: h5na100 TRANSISTORS 132 GD W5NA100 ST C 236 DIODE H5NA100F STH5NA100FI STW5NA100 O-247 h5NA
Contextual Info: STW5NA100 STH5NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W5NA100 ST H5NA100FI 1000 V 1000 V < 3.5 Ω < 3.5 Ω 4.6 A 2.9 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.9 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

H16NA40FI

Abstract: STH16NA40FI W16NA40 h16na4 STW16NA40
Contextual Info: STW16NA40 STH16NA40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS R DS on ID ST W16NA40 ST H16NA40FI 400 V 400V < 0.3 Ω < 0.3 Ω 16 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

BU4508DX equivalent

Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent
Contextual Info: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

2sc3052ef

Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
Contextual Info: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters

Contextual Info: rz 7 SGS-THOMSON *•7#. MSC81450M RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . • . ■ ■ . REFRACTORY\GOLD METALLIZATION RUGGEDIZED VSWR 25:1 INTERNAL INPUT/OUTPUT MATCHING LOW THERMAL RESISTANCE METAL/CERAMIC HERMETIC PACKAGE P0UT = 450 W MIN. WITH 7.0 dB GAIN

Contextual Info: SGS-THOMSON 5 •y Ï . A M 8 1 7 1 9 -0 4 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A ■ ■ » ■ ■ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE

.00p

Contextual Info: r z j SGS-THOMSON SD1894 RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS . • . ■ . CLASS C 1.6 GHz COMMON BASE REFRACTORY/GOLD METALLIZATION EFFICIENCY = 50% MIN. ■ P o u t = 4.5 W MIN. WITH 1 0 dB GAIN PIN CONNIECTION 1 DESCRIPTION

Contextual Info: *57 T YPE irfs IRF N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V dss RDS on Id IRF840 IRF840FI 500 V 500 V < 0.85 £2 < 0.85 a 8 A 4.5 A IRF841 IRF841FI 450 V 450 V < 0.85 ß < 0.85 ß 8 A 4.5 A • . ■ ■ 40 /fi 841/Fl SGS-THOMSON iLiOM)iQ(£I

W8NA80

Abstract: H8NA80FI w8na H8NA80 MAX2838 DSAUTAZ001
Contextual Info: STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE ST W8NA80 ST H8NA80FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.50 Ω < 1.50 Ω 7.2 A 4.5 A TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

W9NA80

Abstract: H9NA80FI h9na80 9NA80 STW9NA80-STH9NA80FI STH9NA80FI STW9NA80
Contextual Info: STW9NA80 STH9NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS PRELIMINARY DATA V DSS R DS on ID ST W9NA80 TYPE 800 V < 1.0 Ω 9.1 A ST H9NA80FI 800 V < 1.0 Ω 5.9 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

BSS63

Abstract: BSS64 marking T3
Contextual Info: BSS63 SMALL SIGNAL PNP TRANSISTOR • ■ ■ ■ Type Marking BSS63 T3 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE LOW FREQUENCY APPLICATONS NPN COMPLEMENT IS BSS64 2 3 1

MJE3440

Contextual Info: MJE3440 SILICON NPN TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The MJE3440 is a NPN silicon epitaxial planar transistors in SOT-32 plastic package. It is designed for use in consumer and industrial line-operated applications.

SOA06

Abstract: SOA56 transistors marking HJ hj sot-23 1Gt transistor TRANSISTOR 1gt
Contextual Info: SOA06 SMALL SIGNAL NPN TRANSISTOR • ■ ■ ■ Type Marking SOA06 1GT SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS MEDIUM CURRENT AF AMPLIFICATION PNP COMPLEMENTS IS SOA56 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM

747s

Abstract: ic 7475 AM1416-200
Contextual Info: SG S-T H O M SO N Æj7 SfflDg[B ô lllLÊCT[B 8!10(gi A M 14 1 6 -2 0 0 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY