ST MARKING E4 Search Results

st MARKING E4

Abstract: KTA711U E4 marking
Contextual Info: SEMICONDUCTOR KTA711U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking E4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark E KTA711U hFE Grade 4 Y 4 , GR(6) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No.

KTA711E

Contextual Info: SEMICONDUCTOR KTA711E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking E4 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark E KTA711E hFE Grade 4 Y 4 , GR(6) * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No.

25C6

Abstract: GDI-30F J600 KT19 kt 605 600AGP20
Contextual Info: Double Row Terminal Blocks KulkaGOOAGP Series 300 Volts Specifications: Base, Phenolic, 150°C 3/8" Centers JJ GDI-30F Material is Available Wire Range with Wire Binding Open Back Design Screw #12-#22 Awg -15 Amps Screws, #6-32 Binder Head, Phil-Slot UL Recognized File No. E47811

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

SD4933

Abstract: M177 marking code h4 capacitor transistor marking code 325
Contextual Info: SD4933 HF/VHF/UHF RF power N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European

Contextual Info: SD4933MR 50 V moisture resistant DMOS transistor for ISM applications Datasheet - preliminary data Features • Improved ruggedness V BR DSS > 200 V • Excellent thermal stability • 20:1 all phases load mismatch capability • POUT = 300 W min. with 24 dB gain @ 30 MHz

92196A146

Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

G7 marking Code

Abstract: hf power transistor mosfet transistor h9 C5 MARKING TRANSISTOR M177 SD4933
Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Preliminary data Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

Contextual Info: EMIF09-SD01F3 IPAD 9 line EMI filter and ESD protection Main application • Secure digital memory card in mobile phones and communication systems Description The EMIF09-SD01F3 is a highly integrated array designed to suppress EMI/RFI noise for secure digital memory cards. The EMIF09-SD01F3 is in a

bosch ecu 0 261 200 218 connection diagram

Abstract: CK 77-1 3 94V-0 WK2 94V0 KL SN 102 94v-0 lcd wiring diagram relay ECU bosch ME 7.4.9 circuit diagram used for pick and place colour sensing robot bosch ecu 0 261 200 100 connection diagram bosch 0 261 204 243 ecu circuit wk2 94v-0 0838
Contextual Info: Canada Wieland Electric Inc. 2889 Brighton Road Oakville, Ontario L6H 6C9 Phone: 905 829-8414 Fax: (905) 829-8413 e-mail: oakville@wielandinc.com On the Internet: www.wielandinc.com DIN rail terminal blocks • with screw connection • with spring connection

A043

Contextual Info: Extract from the online catalog EC-E4 1A Order No.: 0903032 Electronic circuit breaker, signal contact: 1 N/C contact, nominal current: 1 A Product notes WEEE/RoHS-compliant since:

A043

Contextual Info: Extract from the online catalog EC-E4 10A Order No.: 0903038 Electronic circuit breaker, signal contact: 1 N/C contact, nominal current: 10 A Product notes WEEE/RoHS-compliant since:

A043

Contextual Info: Extract from the online catalog EC-E4 2A Order No.: 0903033 Electronic circuit breaker, signal contact: 1 N/C contact, nominal current: 2 A Product notes WEEE/RoHS-compliant since:

922AI

Abstract: 922i 922AY st 922I TS922EIJT TS922 TS922A TS922IJ 922IY macromodel ts922
Contextual Info: TS922 Rail-to-rail high output current dual operational amplifier Features • Rail-to-rail input and output ■ Low noise: 9nV/√Hz ■ Low distortion ■ High output current: 80mA able to drive 32Ω loads ■ High-speed: 4MHz, 1V/ s ■ Operating from 2.7V to 12V

Contextual Info: PART NO. P/N 20113-& » * P/N 2 0 1 1 3 - * * * * - * 20113-* * * - 0 1 * 20113-* * * - 0 2 * A I NO. OFPOS. 20P 30P 40P 50P 60P 80P 100P * A t PLATING TAIL NOTHING : Sn/Pb F : Au FLASH (TO.) H W N O T H I N G ) with DATECODE ONLY -01 with POLARIZING MARK ONLY

ERE41-15

Abstract: T151 T810 T930
Contextual Info: ERE41-1 5 3A : Outline Drawings F A S T R E C O V E R Y DIODE Features : Marking D am per diode fo r high definition T V and high resolution display. H igh voltage by mesa design. •t i 'j - h*7-ÿ • «fSIHtt E4I- IK 01 ■« 1 10 H ig h re liab ility

Contextual Info: STV270N4F3 N-channel 40V - 1.25mΩ - 200A - PowerSO-10 STripFET Power MOSFET Preliminary Data Features Type VDSS RDS on ID (1) STV270N4F3 40V < 1.5mΩ 200A 10 1. Current limited by package 1 • Conduction losses reduced ■ Low profile, very low parasitic inductance

JESD97

Abstract: STV300NH02L V300NH02L DI 944
Contextual Info: STV300NH02L N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS RDS on ID STV300NH02L 24V 0.001Ω 280A 10 • RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced ■ Low profile, very low parasitic inductance

JESD97

Abstract: N4NF03L STN4NF03L
Contextual Info: STN4NF03L N-channel 30V - 0.039Ω - 6.5A - SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A 2 Low threshold drive 1 Description 2 3 SOT-223 This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

Contextual Info: STL150N3LLH5 N-channel 30V - 0.0017Ω - 34A - PowerFLAT 6x5 STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) ID STL150N3LLH5 30 V <0.002 Ω 34 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■

Contextual Info: STL65N3LLH5 N-channel 30 V - 0.006 Ω - 17 A - PowerFLAT 6x5 STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STL65N3LLH5 30 V <0.0075 Ω 17 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark

EMIF06-SD02F3

Abstract: 3 pins LDR Datasheet um2023 cemi schematic diagram 2kv ac regulator ipad circuit schematic Circuit diagram of LDR EMI/ESD EMIF06-SD03F3 Sd pcb
Contextual Info: EMIF06-SD03F3 6-line IPAD , EMI filter and ESD protection for SD card Features • ESD protection IEC standard ■ EMI Filtering ■ Level translator ■ Signal conditionning ■ Integrated power supply with: – Thermal shutdown (TSD) – Under voltage lockout (UVLO)

JESD97

Abstract: STSJ60NH3LL
Contextual Info: STSJ60NH3LL N-channel 30V - 0.004Ω - 15A - PowerSO-8 STripFET™ Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID STSJ60NH3LL 30V <0.0057Ω 15A (2) • Optimal RDS(on) x Qg trade-off @ 4.5 V ■ Conduction losses reduced ■ Improved junction-case thermal resistance