ST MARKING 175 SOT Search Results

stn3p6f6

Contextual Info: STN3P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET VI DeepGATE™ Power MOSFET in a SOT-223 package Datasheet — production data Features Type VDSS RDS on max ID STN3P6F6 60 V 0.16 Ω @ 10 V 3A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Contextual Info: STN3P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET VI DeepGATE™ Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 Order code VDSS RDS on max ID STN3P6F6 60 V 0.16 Ω @ 10 V 3A • RDS(on) * Qg industry benchmark 3 • Extremely low on-resistance RDS(on)

Contextual Info: LM4041 Precision micropower shunt voltage reference Datasheet - production data Description SOT23-3L The LM4041 is a micropower shunt voltage reference, providing a stable 1.225 V output voltage, with an initial accuracy of 0.1% @ 25 °C and a low temperature coefficient. Available in

444p

Contextual Info: I IN R 4ÔSSMSS GGISTÌM SOT International [rag Rectifier PD-9.904 IRLZ24S HEXFET Power M O S FE T INTERNATIONAL R E C T I F I E R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature

m4412

Abstract: M44129
Contextual Info: Bulletin PD-20480 rev. F 05/05 20CJQ100 SCHOTTKY RECTIFIER 2 Amp SOT-223 Description/Features Major Ratings and Characteristics Characteristics 20CJQ100 Units IF AV Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 µs sine 380 A VF 0.67 V waveform TJ @ 1 Apk, TJ = 125°C

n3pf06

Abstract: MOSFET MARKING ST JESD97 STN3PF06
Contextual Info: STN3PF06 P-channel 60V - 0.18Ω - 2.5A - SOT-223 STripFET II Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STN3PF06 60V < 0.20Ω 2.5A • Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 2 1

N2NF10

Abstract: marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT
Contextual Info: STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on ID STN2NF10 100V < 0.26Ω 2.4A 2 Description 1 This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor

N2NF10

Contextual Info: STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET General features Type VDSS RDS on ID STN2NF10 100V < 0.26Ω 2.4A 2 Description 1 This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”

Contextual Info: ST715 High input voltage, 85 mA LDO linear regulator Datasheet - production data Applications • Mobile phones • Personal digital assistant PDAs SOT23-5L • Cordless phones and similar battery-powered systems DFN8 (3x3 mm) Description The ST715 is a high voltage, ultra low quiescent

3n40k

Abstract: STN3N40K3 3N40K3 stn3n40k 3N40 Power MOSFET SOT-223
Contextual Info: STN3N40K3 N-channel 400 V, 3 Ω, 3 A SOT-223 SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID PW STN3N40K3 400 V < 3.3 Ω 3A 3.3 W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance

Contextual Info: ST715 High input voltage, 85 mA LDO linear regulator Datasheet - production data Applications • Mobile phones • Personal digital assistant PDAs SOT23-5L • Cordless phones and similar battery-powered systems DFN8 (3x3 mm) Description The ST715 is a high voltage, ultra low quiescent

diode power 1404

Abstract: MMBD1401 MMBD1403 MMBD1404 MMBD1405
Contextual Info: MMBD1401 / 1403 / 1404 / 1405 Discrete POWER & Signal Technologies N MMBD1401 / 1403 / 1404 / 1405 CONNECTION DIAGRAMS 3 3 1401 3 1403 29 3 1 1 2 2 NC 1 2 3 3 1404 1405 2 SOT-23 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode

Contextual Info: UNISONICTECHNOLOGIESCO., LTD UZ1086 LINEAR INTEGRATED CIRCUIT 1 .5 A ADJ U ST ABLE/FI X ED LOW DROPOU T LI N EAR REGU LAT OR  DESCRI PT I ON The UTC UZ1086 and UZ1086-1.2V, 1.8V, 2.5V, 2.85V, 3.3V and 5V are low dropout three-terminal regulators with 1.5A output current

Contextual Info: STN3N45K3 N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 3 Order code VDSS RDS on max ID Pw STN3N45K3 450 V <4Ω 0.6 A 3W • 100% avalanche tested • Extremely high dv/dt capability

2CJQJ

Abstract: sot223 device Marking IRFP460 20CJQ100 EIA-541 "sot223" "device Marking" 102c marking
Contextual Info: Bulletin PD-20480 rev. D 04/02 20CJQ100 SCHOTTKY RECTIFIER 2 Amp SOT-223 Description/Features Major Ratings and Characteristics Characteristics 20CJQ100 Units IF AV Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 µs sine 380 A VF 0.67 V waveform TJ @ 1 Apk, TJ = 125°C

BCW65C

Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A

TOP-31

Abstract: top31
Contextual Info: STPS6045CP/CPI/CW POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 45 V Tj (max) 175 °C (max) 0.63 V Vf Insulated TOP-3I STPS6045CPI FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREME FAST SWITCHING

diode power 1404

Abstract: MMBD1401 MMBD1403 MMBD1404 MMBD1405
Contextual Info: MMBD1401 / 1403 / 1404 / 1405 CONNECTION DIAGRAMS 3 3 1401 3 1403 29 3 1 2 NC 1 2 1 2 3 3 1404 1405 2 SOT-23 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings*

DIODE 33 25

Abstract: diode power 1404
Contextual Info: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

1403A

Abstract: sot23-3 wa 1405A MMBD1401A a32 sot23-3 DIODE A34 wa sot23-3 R017 MMBD1403A MMBD1404A
Contextual Info: CONNECTION DIAGRAMS 3 3 1401A 1403A A29 3 2 NC 1 1 2 1 2 3 3 1404A 2 SOT-23 3 MARKING MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 1 1405A 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EXPITAXIAL PLANAR SWITCHING DIODE BAS16W SOT-323 PLASTIC PACKAGE 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 1 2 Marking BAS16W = A6 High Switching Diode

STPS4045CW

Abstract: STPS4045CT STPS4045C a2kk
Contextual Info: STPS4045C Power Schottky rectifiers Features ● Very small conduction losses ● Negligible switching losses ● Extremely fast switching ● Low thermal resistance ● Avalanche capability specified ● ECOPACK 2 compliant component STPS4045CT A1 K A2

STPS4045CT

Contextual Info: STPS4045C Power Schottky rectifiers Features ● Very small conduction losses ● Negligible switching losses ● Extremely fast switching ● Low thermal resistance ● Avalanche capability specified ● A1 K A2 ECOPACK 2 compliant component STPS4045CT

Contextual Info: UNISONICTECHNOLOGIESCO., LTD LD1985 LINEAR INTEGRATED CIRCUIT V ERY LOW DROP AN D LOW N OI SE V OLT AGE REGU LAT OR LOW ESR CAP. COM PAT I BLE, WI T H I N H I BI T FU N CT I ON ̈ DESCRI PT I ON The UTC LD1985 is a 150mA fixed output voltage regulator. The