ST 2N2905 Search Results

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

Contextual Info: Microsemi waienmwn, mm m 580 Pleasant St. Watertown, MA 02172 PH: 617 926-040 FAX: (617) 924-1235 2N2905A Features • • • • 60 Volts 600 mAmps Meets MIL-S-19500/290 Collector-Base Voltage 60V Collector Current: 600 mA Fast Switching 345 nS PNP BIPOLAR

2N2905A

Contextual Info: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-040 FAX: (617) 924-1235 2N2905A Features • • • • 60 Volts 600 mAmps Meets MIL-S-19500/290 Collector-Base Voltage 60V Collector Current: 600 mA Fast Switching 345 nS PNP BIPOLAR TRANSISTOR Maximum Ratings

Contextual Info: Microsemi waienmwn, mm m 580 P leasant St. W a te rto w n , M A 02172 PH: 617 926-040 FAX: (617) 924-1235 2N2905A Features • • • • 60 Volts 600 mAmps Meets MIL-S-19500/290 Collector-Base Voltage 60V Collector Current: 600 mA Fast Switching 345 nS

2N2905AT1

Contextual Info: 2N2905AHR PNP low power transistors for Hi-Rel applications Features • Low voltage ■ Low current ■ Linear gain characteristics Applications ■ Low current switching ■ Linear preamplifier TO-39 Description The 2N2905AHR is a silicon planar epitaxial PNP

2N2905AT1

Abstract: 2N2905AHR st marking code
Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

2N2905

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

2N2905At

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V, 0.6 A Datasheet — production data Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics

Contextual Info: 2N2905AHR Hi-Rel PNP bipolar transistor 60 V - 0.6 A Features BVCEO 60 V IC max 0.6 A HFE at 10 V - 150 mA > 100 Operating temperature range -65°C to +200°C • Hi-Rel PNP bipolar transistor ■ Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL

2n2907a

Abstract: 2N2907A st st 2n2907a ST BEX 2n2905a st
Contextual Info: 2N2905A 2N2907A  SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose

2N2905

Abstract: 2N2905A 2n290a 2N2904 transistor 2N2904A transistor 2N2905 2N2904 PNP Transistor TRANSISTOR 2n2904 2N290 2N2905 transistor
Contextual Info: Data Sheet ^ - - 2N2904 2N2904A 2N2905 2N2905A » T M COilFPH H II Sem iconductor Corp. . 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP S i l i c o n T r a n s i s t o r JEDEC T0-39 Case Manufacturers of World Class Discrete Semiconductors

2N2905

Abstract: TRANSISTOR 2n2905 2n2219a npn transistor 2N2219 2N2219A 2N2905A ST 2N2905 2n2905 philips 2N2905 2N2219 2N2905 2N2219 application
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N2905; 2N2905A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification PNP switching transistors

2sc 1177

Abstract: K04A 2N2905
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N2904JAN, JTX, JTXV 2N2904AJAN, JTX, JTXV 2N2905JAN, JTX, JTXV 2N2905AJAN, JTX, JTXV, JANS CRYSTAL OfJCS 2805 Veterans Highway Processed per MIL-S-19500 290 Suite 14 PNP Silicon Small-Signal Transistors Ronkof kor^a N Y . 1177«

2n2905 2n2907

Abstract: 2n2907 2N2905 equivalent 2N2905 st 2n2907 to-18 ST 2N2905 transistor 2N2905 2N2905 transistor 2N2907 PNP Transistor 2N2907 application notes
Contextual Info: 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905 and in Jedec TO-18 (for 2N2907) metal case. They are designed for high speed saturated switching and general purpose application.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2904 2N2905 TO-39 Metal Can Package General Purpose Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage

2N2907A

Abstract: 2N2907 2N2905a equivalent 2N2905A 2N2905A THOMSON 2N2906A 15mAIB 2N2907A THOMSON COMPONENTS 2N2907A diagram
Contextual Info: 2N2905A 2N2907A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose

MMBR2857LT1

Abstract: bcy59z 2N2222A zetex MICROSEMI 2N2222A MPSA96 BCY55 2N2907 PHILIPS SEMICONDUCTOR 2N2369 philips BC327BP BAV99 ON Semi
Contextual Info: 145 Adams Avenue Hauppauge, NY 11788 Phone 631 435-1110 Fax (631) 435-1824 www.centralsemi.com/eol EOL –LIFE SUPPORT List as of: March 30, 2001 Central Semiconductor Corp. will continue to manufacture the discrete semiconductors included on this list as long as there is an industry demand. For an update of this list please contact your sales

Contextual Info: 2N2905A 2N2907A SMALL SIGNAL PNP TRANSISTORS DESCRIPTION The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose

st 2n2907 to-18

Abstract: P008B 2N2904 2n2905 ST
Contextual Info: SGS-THOMSON RaDSMULKEin^OMlDei 2N2904/2N2905 2N2906/2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES D E S C R IP T IO N The 2N2904, 2N2905, 2N2906 and 2N2907 are si­ licon planar epitaxial PNP transistors in Jedec TO39 for 2N2904, 2N2905 and in Jedec TO-18 (for

MOTOROLA 2N5179

Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
Contextual Info: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R

2N3819 MOTOROLA

Abstract: mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857
Contextual Info: EOL Life Support Program Revised: 3 May 2007 EOL Life Support Program Listing as of 05/03/07 EOL ITEM# MANUFACTURER NAME A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 A12F20 A12F40 A12F60 A12F80 A16FR10 A16FR100 A16FR120

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered