SST26 Search Results

Contextual Info: SST26VF064B / SST26VF064BA 3.0V Serial Quad I/O SQI Flash Memory Features • Single Voltage Read and Write Operations - 2.7-3.6V • Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3

Contextual Info: SST26VF064B / SST26VF064BA 3.0V Serial Quad I/O SQI Flash Memory Features • Single Voltage Read and Write Operations - 2.7-3.6V • Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3

SST2603

Contextual Info: SST2603 -5A, -20V,RDS ON 65mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 1.90REF 0.95REF The SST2603 utilized advanced processing techniques to achieve the lowest 0.95REF 1.2 REF possible on-resistance, extremely efficient and cost-effectiveness device.

SST26VF064B

Contextual Info: SST26VF064B / SST26VF064BA 3.0V 64 Mbit Serial Quad I/O SQI Flash Memory Features • Single Voltage Read and Write Operations - 2.7-3.6V • Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3

Contextual Info: SST26VF016B / SST26VF016BA 3.0V 16 Mbit Serial Quad I/O SQI Flash Memory Features • Single Voltage Read and Write Operations - 2.7-3.6V • Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3

SST25VF*B

Contextual Info: Serial Quad I/O SQI Flash Memory SST26VF016 / SST26VF032 SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory Advance Information FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – Nibble-wide multiplexed I/O’s with SPI-like serial

SST2605

Contextual Info: 15Jun2010Rev . C SST2605 -4.0A, -30V,RDS ON 80mΩ P-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente o Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient

SST2622

Abstract: d265
Contextual Info: SST2622 520m 0 A, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2622 utiltzed advance processing techniques to achieve the lowest 0.45 REF 0.60 REF 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.

Contextual Info: SST26WF016B/ SST26WF016BA 1.8V Serial Quad I/O SQI Flash Memory Features • Single Voltage Read and Write Operations - 1.65-1.95V • Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3

SST2605

Contextual Info: SST2605 -4.0A, -30V,RDS ON 80mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 0.37Ref. The SST2605 utiltzed advance processing techniques to achieve the lowest 0.20 0.60 Ref. possible on-resistance, extermely efficient and cost-effectiveness device.

Contextual Info: SST2604 5.5A, 30V,RDS ON 45mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 0.37Ref. 0.20 The SST2604 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. possible on-resistance, extermely efficient and cost-effectiveness device.

sst2605

Contextual Info: SST2605 -4.0A, -30V,RDS ON 80mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 0.37Ref. 0.20 The SST2605 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. possible on-resistance, extermely efficient and cost-effectiveness device.

Contextual Info: SST2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST2622 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.

SST26VF016

Abstract: sst25vf032 SST26VF032 26VF016 F402 SST26 64KBYTE SST26VF032-80-5I-S 8-Contact Very-very-thin, Small-outline, No-lead
Contextual Info: Serial Quad I/O SQI Flash Memory SST26VF016 / SST26VF032 A Microchip Technology Company Data Sheet The SST26VF016 / SST26VF032 Serial Quad I/O (SQI™) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the

sst26vf032ba

Contextual Info: SST26VF032B / SST26VF032BA 3.0V 32 Mbit Serial Quad I/O SQI Flash Memory Features • Single Voltage Read and Write Operations - 2.7-3.6V • Serial Interface Architecture - Nibble-wide multiplexed I/O’s with SPI-like serial command structure - Mode 0 and Mode 3

26vf016

Abstract: sst25vf032
Contextual Info: Serial Quad I/O SQI Flash Memory SST26VF016 / SST26VF032 SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory Advance Information FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – Nibble-wide multiplexed I/O’s with SPI-like serial

Contextual Info: SST2603 -5A, -20V,RDS ON 65mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2603 utilized advanced processing techniques to achieve the lowest 0.37 REF

SST2625

Contextual Info: SST2625 -2.3A, -30V,RDS ON 135mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 0.37Ref. 0.20 The SST2625 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.

n fet 60v 3a

Contextual Info: SST2610 3 A, 60 V, RDS ON 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance,

SST2604

Contextual Info: SST2604 5.5A, 30V,RDS ON 45mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2604 utiltzed advance processing techniques to achieve the lowest 0.45 REF possible on-resistance, extermely efficient and cost-effectiveness device.

sst25vf032

Abstract: SST25VF016 SST26VF032 SST26VF016 SST26 26VF016 26VF032
Contextual Info: Serial Quad I/O SQI Flash Memory SST26VF016 / SST26VF032 SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory Data Sheet FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – Nibble-wide multiplexed I/O’s with SPI-like serial

SST26WF032

Abstract: SST26 WBPR10 26WF032 Quad SPI
Contextual Info: 1.8V Serial Quad I/O SQI Flash Memory SST26WF032 Advance Information The SST26WF032 Serial Quad I/O (SQI™) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices. Operating at frequencies

Contextual Info: Serial Quad I/O SQI Flash Memory SST26VF016 / SST26VF032 A Microchip Technology Company Data Sheet The SST26VF016 / SST26VF032 Serial Quad I/O (SQI™) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the

SST2602

Contextual Info: SST2602 6.3A, 20V,RDS ON 34mΩ Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2602 utiltzed advance processing techniques to achieve the lowest 0.45 REF possible on-resistance, extermely efficient and cost-effectiveness device.