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Catalog Datasheet	Type	Document Tags	PDF
SST2622 Abstract: d265 Contextual Info: SST2622 520m 0 A, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2622 utiltzed advance processing techniques to achieve the lowest 0.45 REF 0.60 REF 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.	Original	SST2622 520mA, OT-26 90REF 95REF SST2622 OT-26 15-Jun-2010 d265	PDF
Contextual Info: SST2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST2622 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.	Original	SST2622 520mA, OT-26 37Ref. SST2622 OT-26 20Ref. 01-Jun-2002	PDF

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SST2622

Abstract: d265
Contextual Info: SST2622 520m 0 A, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 1.90REF 0.95REF 0.95REF 1.2 REF The SST2622 utiltzed advance processing techniques to achieve the lowest 0.45 REF 0.60 REF 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.

Original

SST2622 520mA, OT-26 90REF 95REF SST2622 OT-26 15-Jun-2010 d265

PDF

Contextual Info: SST2622 520mA, 50V,RDS ON 1.8Ω Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.20 0.37Ref. The SST2622 utiltzed advance processing techniques to achieve the lowest 0.60 Ref. 2.60 3.00 possible on-resistance, extermely efficient and cost-effectiveness device.

Original

SST2622 520mA, OT-26 37Ref. SST2622 OT-26 20Ref. 01-Jun-2002

PDF