SSS SOT23 Search Results
SSS SOT23 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TBAS16 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
| BAV99 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet | ||
| TBAV70 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
| TBAW56 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 | Datasheet | ||
| BAV70 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 100 V, 0.215 A, SOT23 | Datasheet |
SSS SOT23 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Diode SOT-23 marking JE
Abstract: sstpad5 SOT23 JE SSs sot23 SOT-23 marking JE JE SOT23 diode TO-18 package
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ot-23sstpad100diode sot-23 marking jesstpad5+5 | |
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Contextual Info: B U R R - B R O W N <i [ OPA651 ] i i S j Sss Wideband, Low Power Voltage Feedback OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • STABLE IN GAINS: > 2V/V The OPA651 is a low power, wideband voltage feed back operational amplifier. It features a bandwidth at |
OCR Scan |
opa651470mhz12-bit-78db | |
BSS138
Abstract: Q67000-S566 E6327 Q67000-S216 marking BSs
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ot-23q67000-s566q67000-s216e6327+3 | |
bss138
Abstract: marking BSs marking "BSs" E6327 Q67000-S216 Q67000-S566 marking BSs sot23 marking code SOT23 SSs
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ot-23q67000-s566q67000-s216e6327+7 | |
SmD TRANSISTOR a77
Abstract: smd marking code SSs
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bss138ot-23q67000-s566q67000-s216+8 | |
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Contextual Info: 19-1227; Rev 1; 6/97 « ssS T H ig h -S p e e d S te p -D o w n C o n tro lle rs w ith S ynchronous R e c tific a tio n fo r C P U P o w e r The switching frequency Is resistor program m able from 100kHz to 1MHz. High switching frequencies allow the use of a small surface-mount Inductor and decrease out |
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100khzmax162424-pln100mv+3 | |
transistor P18 FET
Abstract: PA1954NL KFH-032-6 TEPSLV0J227M c86 sot23 PA0955 transistor SMD p16 PA1382 Q12-Q15 DC888A
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88a-b6v-72vinltc3725/ltc3706ltc3725+14 | |
nec 2501
Abstract: DIODE FS 604 c86 sot23 CRCW12065R10 CAP 10nF 200V 0603 2501-2-00-80-00-00-07-0 transistor P18 FET 2N7002-SOT23 AC Transformer 50A 100V LTC3706
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88a-a6v-72vinltc3725/ltc3706ltc3725+14 | |
06035C103KAT2A
Abstract: E4 PNP SMD TRANSISTOR transistor P18 FET 1nF, 50V, AVX Corporation c86 sot23 Cap X7R 1210 T4 LTC3706EGN pa1494.242 TMK325BJ475KN 16TQC68M
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88a-c6v-72vinltc3725/ltc3706ltc3725+15 | |
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Contextual Info: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability |
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ape8800a300ma250mvot-23-5l+1 | |
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Contextual Info: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability |
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250mv300maot-23-5ltsot-23-5l+1 | |
IRF 1450
Abstract: km 1667 km 1667 datasheet mmic marking code j
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q62702-m901-coilb82412-a3221-m900mhz+6 | |
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Contextual Info: Advanced Power Electronics Corp. APE8800A 300mA LOW DROPOUT LINEAR REGULATOR WITH SHUTDOWN FEATURES DESCRIPTIOON Low Dropout Voltage of 250mV at 300mA Guaranteed 300mA Output Current Very Low Quiescent Current at 30µA ±2% Output Voltage Accuracy Needs Only 1µF Capacitor for Stability |
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250mv300maot-23-5ltsot-23-5l+1 | |
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Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P-Channel — Depletion 2SOURCE M MBFJ177LT1 MAXIMUM RATINGS Rating Symbol Value Unit Vd G 25 Vdc v GS r -2 5 Vdc Symbol Max Unit Total Device Dissipation FR-5 BoardO) Ta = 25-C Derate above 25°C PD 225 |
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mbfj177lt1ot-23o-236abmmbfj177lt1+1 | |
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sot-223 code marking
Abstract: marking sSH sot-23 SAs SOT23 marking code SOT23 SSi smd marking code SSs code marking ssi sot-23 marking code SOT23 SSs MARKING code SSi SOT23 SAs SOT-23 marking marking BSs sot23
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q67000-s220q67000-s066q67000-s273q62702-s566+13 | |
marking code AV sot-23Contextual Info: Advanced Power Electronics Corp. AP432-3 Low Voltage Adjustable Shunt Regulators Description Features Precision reference voltage B : 1.24V ±1% A : 1.24V ±0.5% Sink current capability: 200mA. Minimum cathode current for regulation: 150µA Equivalent full-range temp coefficient: 30 ppm/°C |
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ap432-3200maot-89ot-23+3 | |
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Contextual Info: Advanced Power Electronics Corp. AP431A-HF-3 Adjustable Precision Shunt Regulators Description Features Precision reference voltage B : 2.495V ±1% A : 2.495V ±0.5% Sink current capability: 200mA. Minimum cathode current for regulation: 300µA Equivalent full-range temp coefficient: 30 ppm/°C |
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ap431a-hf-3200maot-89ot-23+2 | |
transistor D 2395Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 M M BTA14LT1* Darlington A m plifier Transistors NPN Silicon 'Motorola Preferred Device COLLECTOR 3 EMITTER 2 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Collector-Emitter Voltage Symbol |
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mmbta13lt1bta14lt1ot-23o-236ab+4 | |
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Contextual Info: SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. Supplied in an inexpensive plas tic package for low-cost, high-volume consum er requirements. A lso avail |
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mbd101mmbd101lt1o-226acot-23+1 | |
marking code SOT23 SSs
Abstract: CMPZDC18V CMPZDC3V6 CMPZDC3V0 CMPZDC8V2 zener diode 3.2 CCZ2 SSs sot23 CMPZDC47V CMPZDC20V
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cmpzdc47v350mwot-2304-november+9 | |
bss138
Abstract: SSs sot-23 022ra marking BSs sot23 siemens
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ot-23q67000-s566q67000-s216e6327+6 | |
marking BSs sot23 siemens n-channel
Abstract: 4q diode sot23 diode marking code MU sot23 paz marking BSs sot23 siemens
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vn2106vn2110vn2106n3vn2110n3+11 | |
FDC6303NContextual Info: F A IR C H IL D Au9ust 1997 SEMICONDUCTOR^ FDC6303N Digital FET, Dual N-Channel General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchiltfe proprietary, high cell density, DMOS technology. This very high density |
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fdc6303nfoc6303n34btb74 | |
CDS2C05GTA
Abstract: CDA5C16GTH usblc6-4sc6 low leakage tvs diode sod323 CDS3C05GTA CDS3C09GTA CDS3C15GTA ESDA14V2L PESD12VS1UB H SOD723
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cds2c15gthod-723cds2c16gthcds3c16gth+14 | |