SSH7N60A Search Results

SSH7N60A Functional Equivalents (5)

The Functional Equivalents tab will give you options that are likely to match the same function of SSH7N60A, but it may not fit your design.

Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description
RFP12N10L	onsemi	$0.8773	Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
RFP70N06	onsemi	$1.5616	Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SPW47N60C3	Infineon Technologies AG	$9.3660	Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RFP30N06LE	Rochester Electronics LLC	Check for Price	30A, 60V, 0.047ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
RFP14N06L	Intersil Corporation	Check for Price	Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

SSH7N60A Datasheets (3)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SSH7N60A	Fairchild Semiconductor	Advanced Power MOSFET	Original	PDF	255.32KB	7
SSH7N60A	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SSH7N60A	Fairchild Semiconductor	Advanced Power MOSFET	Scan	PDF	168.8KB	6

SSH7N60A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
N 415 Mosfet Contextual Info: SSH7N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ VOS = 600V	OCR Scan	SSH7N60A N 415 Mosfet	PDF
Contextual Info: Advanced SSH7N60A Power MOSFET FEATURES Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = 1 .2 ft ■ Extended Safe Operating Area ■ Lower Leakage Current : 2 5 n A (M a x .) @ V DS = 600V ■ Lower RDS(ON) : 0.977£1 (Typ.)	OCR Scan	SSH7N60A	PDF
lf7a Contextual Info: SSH7N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 uA M ax @ Lower RDS(ON) : 0.977 O (Typ.)	OCR Scan	SSH7N60A lf7a	PDF
irfs250a Contextual Info: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A	OCR Scan	IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A irfs250a	PDF
SSH7N60A Contextual Info: SSH7N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 1.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 7.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µ A (Max.) @ VDS = 600V	Original	SSH7N60A SSH7N60A	PDF
Contextual Info: SSH7N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 1-2 ß ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 7.3 A ■ Improved Gate Charge ■ Extended Safe Operating Area TO -3P ■ Lower Leakage Current : 25 nA (Max.) @ V DS = 600V	OCR Scan	SSH7N60A O-220-F-4L G03b332 0G3b333	PDF
lf7a Abstract: SSH7N60A Contextual Info: Advanced SSH7N60A P o w e r MOSFET FEATURES D S S • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea	OCR Scan	SSH7N60A lf7a SSH7N60A	PDF
irf1740 Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640 Contextual Info: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040	OCR Scan	SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
sss4n60a Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china Contextual Info: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high	Original	IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china	PDF
SSP6N60A Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A Contextual Info: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A	PDF
ss8050 d 331 Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34 Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2	Original	F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34	PDF
SSD2104 Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A Contextual Info: PRODUCT GUIDE DO- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) OS(on) c Hi Q (A) (G) (PF) (nC) I D R PD fC/W) (W) Page 8 0.150 280 17 7.04 18 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 60V IRFR034A 23 0.040	OCR Scan	SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A SSD2104 irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A	PDF

SSH7N60A Search Results

SSH7N60A Functional Equivalents (5)

SSH7N60A Datasheets (3)

SSH7N60A Datasheets Context Search

N 415 Mosfet

lf7a

irfs250a

SSH7N60A

lf7a

irf1740

YTA630

sss4n60a

SSP6N60A

ss8050 d 331

SSD2104