SSH4N90AS Search Results
SSH4N90AS Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SSH4N90AS | Fairchild Semiconductor | Advanced Power MOSFET | Original | 258.47KB | 7 | ||
| SSH4N90AS | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| SSH4N90AS | Fairchild Semiconductor | Advanced Power MOSFET | Scan | 169.75KB | 6 |
SSH4N90AS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SSH4N90ASContextual Info: Advanced SSH4N90AS P o w e r MOSFET FEATURES BV — 900 V R ugged G ate O xide T e ch n o lo g y ^D S o n = 3.7 Q. • Lo w e r Input C a pa citance lD = 4.5 A ■ Im proved G ate C harge ■ A valan che R ugged T ech n o lo g y ■ ■ E xtended S afe O pe ra ting A rea |
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SSH4N90ASContextual Info: SSH4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 3.7 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
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Contextual Info: Advanced SSH4N90AS Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^DS on = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V H Low Rds(0n) ■ 3.054 £1 (Typ.) |
OCR Scan |
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SSH4N90ASContextual Info: SSH4N90AS Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 3.7 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V |
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Contextual Info: SSH4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = ■ ■ Lower Input Capacitance Improved Gate Charge lD = 4.5 A ■ ■ Extended Safe Operating Area Lower Leakage Current : 25|iA (Max.) @ VDS = 900V |
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Contextual Info: Advanced SSH4N90AS Power MOSFET FEATURES B V DSS - • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 3 . 7 Q. LO Avalanche Rugged Technology II Q ■ 900 V ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ VDS = 900V |
OCR Scan |
ssh4n90as | |
irf1740
Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
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ssr3055airfr014airfr024airfr034a+16 | |
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
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5ke100a5ke100ca5ke10a5ke10ca+16 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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2n70002n70022sj3772sj378+16 | |
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
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sc70-6ot-23fdr8321lfdr8521l+13 | |
ss8050 d 331
Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
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f-91742ss8050 d 331tip122 tip127 mosfet audio ampksd180+7 | |
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Contextual Info: Advanced Power MOSFET S S H 4 N 9 0 A S FEATURES BV0SS = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 MA Max @ VDS = 900V |
OCR Scan |
ssh4n90as | |
SSD2104
Abstract: irfm014 SSP80N06 IRFU210A IRFI530A SSS7N60A IRFU*230A sss7n60a 951 SSP2N60A IRF640A
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OCR Scan |
ssr3055airfr014airfr024airfr034a+16 |