SSF3402
Abstract: "battery protection" 3402 transistor
Contextual Info: SSF3402 D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V
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ssf3402ot-23180mm25unless+2battery protection3402 transistor
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Mosfet
Abstract: SSF3420 MARKING TR SOT23-6 P MOSFET
Contextual Info: SSF3420 30V N-Channel MOSFET D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A
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ssf3420ot23-6180mmmosfet+1marking tr sot23-6 p mosfet
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TSOP-6
Abstract: SSF3428 DIODE 30V TSOP DIODE 30V TSOP-6
Contextual Info: SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V
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ssf342825unlesstsop-6diode 30v tsop+1diode 30v tsop-6
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SOT23-6
Abstract: SSF3420 marking QG SOT23-6 55A SOT23-6
Contextual Info: SSF3420 D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V
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ssf3420ot23-6180mmsot23-6+2marking qg sot23-655a sot23-6
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Mosfet
Abstract: SSF3428 DIODE 30V TSOP-6
Contextual Info: SSF3428 30V N-Channel MOSFET DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6A
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SOT23-6
Abstract: SSF3416 9A SOT23
Contextual Info: SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V
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Mosfet
Abstract: SSF3402
Contextual Info: SSF3402 30V N-Channel MOSFET D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V
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ssf3402ot-23180mm950typ+2550refmosfet
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BY228 equivalent
Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0112-1009by228 equivalentbyd14gru20a cross reference |
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IC 7805
Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Contextual Info: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)
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1n40011n40070v-1000v1n5391+141n53991n54001n5408s6a05ic 78057812 voltage regulator 5aregulator ic 7805regulator ic 78241n10016a smd transistorregulator ic 79057824 5aregulator ic 78127812 7912
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varistor 102 mb
Abstract: varistor 472 ns b SSF31 SSF32 SSF33 SSF34 SSF51 SSF52 SSF53 SSF54
Contextual Info: SINO-ANERICAN SILICON 24E £> • flafll?4b □□□□□51 ? ■ T 03-1S S U P E R F A S T R E C T IF IE R S OPERATING AND STORAGE TEMPERATURE -6 5 °C tO +175°C TYPE Maximum Peak Reverse Voltage Maximum Forward Maximum Reverse . Maximum Forward . ,
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t03-1sfast/do-201ssf31ssf32+11ssf33ssf34do-41350x350x345do-15varistor 102 mbvaristor 472 ns bssf51ssf52ssf53ssf54
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bvy27-200
Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
Contextual Info: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference
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1n5190gpbyw76byt51d1n5212+16utr2320byw32utr2340byw34utr3305byw72bvy27-200by228 equivalenterd29-08erc06-15serc05-10bbyd14jrgp15j equivalentbyd14gerd28-06sbvy28-200
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BTA136
Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any
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05nh4505nh4605nu4105nu42+160r8gu415ka105ka10a5ka115ka11a5ka12bta136ft0818mwsm4007 panjitby288ft2516nhfs0802nhft0817mhft1208mwft0618mhequivalent components of diode her207
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SSF33
Abstract: SSF34 SSF31 SSF32 SSF51 SSF52 SSF53 SSF54 VR-60 T03-1S
Contextual Info: SINO-ANERICAN SILICON 24E £> • flafll?4b □□□□□51 ? ■ S U P E R F A S T R E C T IF IE R S T03-1S OPERATING AND STORAGE TEMPERATURE -65°CtO +175°C TYPE Maximum Peak Reverse Voltage Maximum Forward Maximum Reverse . Maximum Forward ., Maximum Average
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t03-1sfast/do-201ssf31ssf32+8ssf33ssf34amperes-su35ssf51ssf52ssf53ssf54vr-60
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