SSF33 Search Results

Mosfet

Abstract: SSF3324 MOSFET N-Channel 1a vgs 1.2v sot-23
Contextual Info: SSF3324 30V N-Channel MOSFET Main Product Characteristics VDSS 30V RDS on 26.5mohm(typ.) ID 5.8A ① SOT23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced trench MOSFET process technology Special designed for PWM, load switching and

diode marking 41a on semiconductor

Abstract: SSF3339 SSF33
Contextual Info: SSF3339 D DESCRIPTION The SSF3339 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram

SSF3349

Contextual Info: SSF3349 D DESCRIPTION The SSF3349 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram

Mosfet

Abstract: SSF3314E
Contextual Info: SSF3314E 30V N-Channel MOSFET DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional

Contextual Info: SSF3338 D DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =4A RDS(ON) < 65mΩ @ VGS=4.5V

Mosfet

Abstract: SSF3338
Contextual Info: SSF3338 30V N-Channel MOSFET D DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =4A

SSF3338

Contextual Info: SSF3338 D DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =4A RDS(ON) < 65mΩ @ VGS=4.5V

SSF3322

Contextual Info: SSF3322 D DESCRIPTION The SSF3322 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =5.8A RDS(ON) < 43mΩ @ VGS=4.5V

Mosfet

Abstract: SSF3341 sot-23 Marking mosfet p-channel
Contextual Info: SSF3341 30V P-Channel MOSFET Main Product Characteristics D VDSS -30V RDS on 42mΩ (typ.) ID -4.2A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and

"battery protection"

Contextual Info: SSF3344 D DESCRIPTION The SSF3344 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S GENERAL FEATURES Schematic diagram ● VDS = 30V,ID = 4A RDS(ON) < 110mΩ @ VGS=2.5V RDS(ON) < 70mΩ @ VGS=4.5V

SSF3341

Abstract: sot-23 3341
Contextual Info: SSF3341 D DESCRIPTION The SSF3341 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram

Mosfet

Abstract: SSF3365
Contextual Info: SSF3365 30V P-Channel MOSFET D DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

Mosfet

Abstract: SSF3341L
Contextual Info: SSF3341L 30V P-Channel MOSFET D DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.

ssf3324

Contextual Info: SSF3324 D DESCRIPTION The SSF3324 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =5.8A RDS(ON) < 35mΩ @ VGS=4.5V

cx95110

Abstract: DTP-600W anydata dtp 600w CSR BC5MM CX93510 BC5MM CSR USB SPI converter SSF336 Conexant CX93010 CX93510EVKR1
Contextual Info: Imaging Solutions Interactive Display Appliances Interactive Display and Image Processor Evaluation Kit CX92735-EVK Conexant’s portfolio includes a comprehensive suite of semiconductor solutions for communications and consumer applications. Conexant’s CX92735 is an integrated imaging and interactive display processor

BY228 equivalent

Abstract: BYD14G RU20A cross reference
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book Sinterglass Avalanche Diodes vishay semiconductors vSE-db0112-1009 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

varistor 102 mb

Abstract: varistor 472 ns b SSF31 SSF32 SSF33 SSF34 SSF51 SSF52 SSF53 SSF54
Contextual Info: SINO-ANERICAN SILICON 24E £> • flafll?4b □□□□□51 ? ■ T 03-1S S U P E R F A S T R E C T IF IE R S OPERATING AND STORAGE TEMPERATURE -6 5 °C tO +175°C TYPE Maximum Peak Reverse Voltage Maximum Forward Maximum Reverse . Maximum Forward . ,

bvy27-200

Abstract: BY228 equivalent ERD29-08 ERC06-15s ERC05-10b BYD14J RGP15J equivalent BYD14G ERD28-06S BVY28-200
Contextual Info: VISHAY Vishay Semiconductors Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Semiconductors devices and those of other manufacturers. Code Definitions 1 = equivalent 2 = minor electrical difference

BTA136

Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
Contextual Info: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

SSF33

Abstract: SSF34 SSF31 SSF32 SSF51 SSF52 SSF53 SSF54 VR-60 T03-1S
Contextual Info: SINO-ANERICAN SILICON 24E £> • flafll?4b □□□□□51 ? ■ S U P E R F A S T R E C T IF IE R S T03-1S OPERATING AND STORAGE TEMPERATURE -65°CtO +175°C TYPE Maximum Peak Reverse Voltage Maximum Forward Maximum Reverse . Maximum Forward ., Maximum Average