SS37 Search Results

Contextual Info: TO SHIBA SS370 1 SS370 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package 2.1 Vf 2 = 0.9V (TYP.)

TO-236MOD

Abstract: 1SS379
Contextual Info: SS379 TOSHIBA 1 SS379 TOSHIBA DIODE SILICON EPITAXIAL PLANAR GENERAL PURPOSE RECTIFIER APPLICATIONS. • • • • Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package U n i t in m m : Vp = 1.0V Typ. : lR = 0.1nA (Typ.) : Cx = 3.0pF (Typ.)

Contextual Info: SS374 T O SH IB A TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS374 SILICON EPITAXIAL SCH O TTKY BARRIER TYPE Unit in mm + 0.5 8.5 0.3 • • + 0.2 5 1.5 - 0 .1 5 Small Package Low Forward Voltage : Vp 2 = 0.23V (TYP.) @Ijr = 5mA I- -I o' o + MAXIM UM RATINGS (Ta = 25°C)

1SS370

Contextual Info: TOSHIBA SS370 1 SS370 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package 2.1 + 0.1 V f 2 = 0.9V (TYP.)

Contextual Info: SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 . Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA o c + i 3 - MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: SS373 T O S H IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE • S m a ll Package • Low Forward Voltage : V p = 0.23V TYP. @ Ip U n it in mm = 5mA M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse

1SS374

Contextual Info: TOSHIBA SS374 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS374 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0 .5 Z .5 - 0 .3 • • + 0 .3 5 1 .5 -0 .1 5 Small Package Low Forward Voltage : Vjr 2 = 0*23V (TYP.) @Ijr = 5mA h + I -o - UNIT

H9610

Contextual Info: SS374 T O SH IB A TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS374 SILICON EPITAXIAL SCH O TTKY BARRIER TYPE Unit in mm + 0.5 8.5 0.3 • • + 0.2 5 1.5 - 0 .1 5 Small Package Low Forward Voltage : Vp 2 = 0.23V (TYP.) @Ijr = 5mA I« , "I o' o +

SS372

Contextual Info: SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA o c + i MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: SS379 TO SHIBA 1 SS379 TOSHIBA DIODE SILICON EPITAXIAL PLANAR Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS. • • • • Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package : Vp= 1.0V Typ. : lR = 0.1nA (Typ.) : CT = 3.0pF (Typ.)

Contextual Info: SS373 T O S H IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE • S m a ll Package • Low Forward Voltage : V p = 0.23V TYP. @ Ip U n it in mm = 5mA M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse

Contextual Info: SS377 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 ’ -Q 3 • . Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 = +Q85 IO HO dd + I d i MAXIMUM RATINGS (Ta = 25°C)

1ss373

Contextual Info: SS373 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA 0.8 ±0.1 MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC

Contextual Info: Coilmaster Electronics Co., Ltd. 9F-3 No.398, Huan Bei Rd. Chung Li City, Taoyuan 320, Taiwan Tel : +886-3-422-8279 Fax : +886-3-422-8734 E-mail :info@coilmaster.com.tw Web Site : www.coilmaster.com.tw SS3730 SERIES ~ Spring Air Core Inductors SHAPE AND DIMENSION

Contextual Info: TO SHIBA SS370 1 SS370 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS • • • • Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package 2.1 ± 0.1 Vf 2 = 0.9V (TYP.)

Contextual Info: SS377 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 —Q 3 • . Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 =+ Q 8 5 IO HO dd + I d i M A X IM U M RATINGS (Ta = 25°C)

1SS378

Contextual Info: SS378 TOSHIBA 1 SS378 TOSHIBA DIODE SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER TYPE HIGH SPEED SWITCHING. Unit in mm 2.1 ± 0.1 • • ,1 .2 5 ± 0 .1 Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-70 r* * o o +I 32 -3 M A X IM U M RATINGS (Ta = 25°C)

SMD Transistors w04 sot-23

Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
Contextual Info: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.

IMX6DQ6SDLSRM

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQIEC Rev. 2.3, 07/2013 MCIMX6QxCxxxxC MCIMX6DxCxxxxC i.MX 6Dual/6Quad Applications Processors for Industrial Products Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information

IMX6DQ6SDLSRM

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQAEC Rev. 2.3, 07/2013 MCIMX6QxAxxxxC MCIMX6DxAxxxxC i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information

sony cmos sensor imx 117

Abstract: sony IMX 117 imx 117 sensor sony cmos sensor imx 174 sony IMX 135 sony CMOS sensor imx 135 225/sony cmos sensor imx IMX 206 imx 117
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQAEC Rev. 3, 03/2014 MCIMX6QxAxxxxC MCIMX6QxAxxxxD MCIMX6DxAxxxxC MCIMX6DxAxxxxD i.MX 6Dual/6Quad Automotive and Infotainment Applications Processors Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch

SDHC specification

Abstract: omnivision SS42 graphic display 8080 epson sony IMX 136 toshiba LTM 10 C 015 K NV 15F sony smartphone ARM11 MCIMX31
Contextual Info: Freescale Semiconductor Data Sheet: Technical Data MCIMX31 and MCIMX31L MCIMX31 and MCIMX31L Multimedia Applications Processors 1 Introduction The MCIMX31 and MCIMX31L multimedia applications processors represent the next step in low-power, high-performance application processors.

Contextual Info: Freescale Semiconductor Data Sheet: Technical Data Document Number: IMX6DQIEC Rev. 2.1, 07/2013 MCIMX6QxCxxxxC MCIMX6DxCxxxxC i.MX 6Dual/6Quad Applications Processors for Industrial Products Package Information Case FCPBGA 21 x 21 mm, 0.8 mm pitch Ordering Information

sony cmos sensor imx 175

Abstract: sony IMX 132 CMOS Sony IMX 183 sony IMX 145 image sensor DDR21 imx cmos sony sony IMX 140 sensor sony cmos sensor imx 071
Contextual Info: Document Number: MCIMX35SR2CEC Rev. 8, 04/2010 MCIMX35 i.MX35 Applications Processors for Industrial and Consumer Products Package Information Plastic package Case 5284 17 x 17 mm, 0.8 mm Pitch Silicon Revisions 2.0 and 2.1 Ordering Information See Table 1 on page 3 for ordering information.