SRAM 256KX16 Search Results

Contextual Info: SRAM AS8S128K32 128K x 32 SRAM GENERAL 21, 28, 39 are no connects PN 66 DESCRIPTION Lead PGA- Pins 8, SRAM MEMORY ARRAY The AS8S128K32 is a 4 Megabit CMOS SRAM Module organized as 128Kx32-bits and user configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves high speed access, low

MR2A16A

Abstract: MR2A16ACYS35R mr2a16acma35 MR2A16AMA35 MR2A16AYS35 MR2A16ACYS35 MR2A16AVYS35 400-mil
Contextual Info: MR2A16A 256Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK

Contextual Info: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,

A934

Contextual Info: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History History Draft Data Remark 0.0 Initial draft February 4,1997 Preliminary 0.1 Revised - Change datasheet format

3524CP

Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Contextual Info: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS

Contextual Info: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

Contextual Info: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

3D SR16M32VS4500

Abstract: Enplas OTS
Contextual Info: -pjusn MEMORY MODULE SRam 512Kx32-SOP 3D SR16M32VS4500 a HEICO com pany Static Ram MODULE 16Mbit SRam organized as 512Kx32, based on 256Kx16 Features_ - Fast Access Time : 12, 15, 20ns. - Single + 3.3V ± 0.3V power supply.

Contextual Info: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400 / HY62QF16400 / HY62EF16400 / HY62SF16400 is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The

256Kx16bit

Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4th 1997 Preliminary 0.1 Revised - Change datasheet format

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Title 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet format

Contextual Info: Preliminary CMOS SRAM KM616V4000BZ, KM616U4000BZ Family Document Tills 256Kx16 Low Voltage & Low Power SRAM Datasheets for 48-CSP Revision History Revision No History Draft Data Remark 0.0 Initial draft February 4,1997 Prelim inary 0.1 Revised - Change datasheet form at

Contextual Info: HY62UF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

Contextual Info: HY62UF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002

Contextual Info: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)

Contextual Info: HY62UF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002

Contextual Info: HY62LF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

Contextual Info: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02

HY62SF16404E

Abstract: HY62SF16404E-I
Contextual Info: HY62SF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002

marking TACS

Contextual Info: HY62UF16406E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002

EDI816256CA

Contextual Info: EDI816256CA-RP HI-RELIABILITY PRODUCT 256Kx16 PLASTIC MONOLITHIC SRAM FEATURES The EDI816256CA is a ruggedized plastic 256Kx16 SRAM that allows the user to capitalize on the cost advantage of using a plastic component while not sacrificing all of the reliability